• The Korean Journal of Applied Statistics
• /
• v.23 no.4
• /
• pp.683-692
• /
• 2010

This short article is concerned with a categorical time series obtained after clipping a heteroscedastic GARCH process. Estimation methods are discussed for the model parameters appearing both in the original process and in the resulting binary time series from a clipping (cf. Zhen and Basawa, 2009). Assuming AR-GARCH model for heteroscedastic time series, three data sets from Korean stock market are analyzed and illustrated with applications to calculating certain probabilities associated with the AR-GARCH process.

• The Korean Journal of Applied Statistics
• /
• v.9 no.1
• /
• pp.111-124
• /
• 1996

In this paper, we consider the first-order integer valued autoregressive(INAR(1)) model where correlation structure is similar to that of the continuous valued AR(1) process. Several methods for estimating the parameters of the INAR(1) process with negative binomial marginal are discussed. We derive asymptotic distributions of these estimators. The results of a simulation study for these estimators methods show that the estimator which we present in this paper is better than the estimator which Klimko and Nelson(1978) presented. As an application we considered the estimator of M/M/1 queue length.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.2
• /
• pp.75-79
• /
• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.128-133
• /
• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.4
• /
• pp.203-209
• /
• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1005-1008
• /
• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.7
• /
• pp.551-556
• /
• 2001

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.29-32
• /
• 2004

This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.61 no.1
• /
• pp.13-17
• /
• 2012

Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.75-79
• /
• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.