• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.245-252
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• 2002

The computationally simple quantum mechanical method (VSCF-DWB-IOS) has been applied to studying the Ar-$CO_2$ vibrational predissociation phenomenon. The new methodology utilizes the vibrational self-consistent field method to determine the vibrational structure of the van der Waals complex, the distorted-wave Born approximation for dissociating process, and the infinite-order sudden approximation for the continuum dissociating product of $CO_2$. The dissociation due to the coupling of the symmetric stretching vibrational motion of $CO_2$ with the motion of the Ar van der Waals mode has been extensively investigated. The lifetimes of transient excited vibrational states, linewidths of absorption peak, and the rotational state distributions of the product, $CO_2$ have been computed. It has been found that the lifetime of the Ar-$CO_2$ in excited vibrational state is very long compared with that of triatomic van der Waals complexes and the product $CO_2$ carries a major portion of dissociation energy as a rotational energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.752-758
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• 2010

The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.56 no.1
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• pp.1-5
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• 2007

Study on the electron transport coefficient in mixtures of CF4 and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CF_4$ and Ar, were used. The differences of the transport coefficients of electrons in $CF_4$ mixtures of Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f({\varepsilon})$ has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• International Journal of Internet, Broadcasting and Communication
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• v.13 no.1
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• pp.54-60
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• 2021

AR (Augmented Reality) is a technology that provides virtual content to the real world and provides additional information to objects in real-time through 3D content. In the past, a high-performance device was required to experience AR, but it was possible to implement AR more easily by improving mobile performance and mounting various sensors such as ToF (Time-of-Flight). Also, the importance of mobile augmented reality is growing with the commercialization of high-speed wireless Internet such as 5G. Thus, this paper proposes a system that can provide AR services via GNN (Graph Neural Network) using cameras and sensors on mobile devices. ToF of mobile devices is used to capture depth maps. A 3D point cloud was created using RGB images to distinguish specific colors of objects. Point clouds created with RGB images and Depth Map perform downsampling for smooth communication between mobile and server. Point clouds sent to the server are used for 3D object detection. The detection process determines the class of objects and uses one point in the 3D bounding box as an anchor point. AR contents are provided through app and web through class and anchor of the detected object.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.1
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• pp.72-79
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• 2024

This study focuses on combining traditional craft lacquer thread sculpture and augmented reality (AR) technology to develop digital educational content. In this way, we not only make it easier and easier for children to learn and understand the traditional craftsmanship of lacquer thread sculpture, but also finds a new direction for traditional craft education. First, through literature research, the production process of traditional craft lacquer thread sculpture is summarized. Through an in-depth understanding of traditional craft lacquer thread sculpture, it provides a theoretical basis for subsequent AR digital content development to achieve educational goals. Next, we used AR technology to design and produce the digital content of the traditional craft lacquer thread sculpture. This study proposes the application of AR technology and the design and production methods of digital content. It is hoped that the methods and experiences we have proposed will not only provide reference for the development of similar digital content in the future, but also provide new educational methods for the inheritance of traditional crafts.

• Korean Journal of Construction Engineering and Management
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• v.25 no.2
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• pp.69-80
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• 2024

Currently rebar spacing inspection is carried out by human inspectors who heavily rely on their individual experience, lacking a guarantee of objectivity and accuracy in the inspection process. In addition, if incorrectly placed rebars are identified, the inspector need to correct them. Recently, laser scanning and AR technologies have been widely used because of their merits of measurement accuracy and visualization. This study proposes a technology for rebar spacing inspection and fixing by combining laser scanning and AR technology. First, scan data acquisition of rebar layers is performed and the raw scan data is processed. Second, AR-based visualization and fixing are performed by comparing the design model with the model generated from the scan data. To verify the developed technique, performance comparison test is conducted by comparing with existing drawing-based method in terms of inspection time, error detection rate, cognitive load, and situational awareness ability. It is found from the result of the experiment that the AR-based rebar inspection and fixing technology is faster than the drawing-based method, but there was no significant difference between the two groups in error identification rate, cognitive load, and situational awareness ability. Based on the experimental results, the proposed AR-based rebar spacing inspection and fixing technology is expected to be highly useful throughout the construction industry.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.