• Title/Summary/Keyword: AR Coating

Search Result 250, Processing Time 0.022 seconds

Fabrication of oxide buffer layers for coated conductors (MOD 공정에 의한 산화물 완충층 제조)

  • Km Young-Kuk;Yoo Jai-Moo;Ko Jae-Woong;Chung Kuk-Chae
    • Progress in Superconductivity and Cryogenics
    • /
    • v.8 no.3
    • /
    • pp.37-40
    • /
    • 2006
  • Oxide buffer layers for YBCO coated conductors were fabricated using MOD processing and development of microstructure and texture were investigated. A $CeO_2$ buffer layers were formed on RABiTS tape. Acetate-based precursor solution was employed to synthesize the precursor solution. Subsequently, the precursor solution was stabilized and modified with triethanolamine. $CeO_2$ precursor gel film was coated and annealed in $Ar/H_2$ atmosphere at high temperature. An annealed $CeO_2$ film shows mixed orientation with high (001) texturing. It was shown that (111) texture of $CeO_2$ layers were enhanced by multiple coating. This degradation was attributed to development of microcracks in the multiply coated $CeO_2$ films. Also discussed are the synthesis and the characterization of $La_2Zr_2O_7$ (LZO) buffer layers on RABiTS tape. A biaxially textured LZO buffer layer was fabricated with MOD processing method using metal alkoxide based precursor solution. It was shown that the LZO film were epitaxially grown on RABiTS tape and crack-free & uniform surface was obtained after annealing in $Ar/H_2$ atmosphere.

Tribological Characteristics of Si-Diamond-Like Carbon Films in a Condition with Carbon Nanotube Ink Lubricant (Carbon Nanotube 잉크 환경에서의 Si-Diamond-Like Carbon 박막의 내마모 특성)

  • Jang, Kil-Chan;Kim, Tae-Gyu
    • Korean Journal of Materials Research
    • /
    • v.21 no.3
    • /
    • pp.149-155
    • /
    • 2011
  • We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 ${\mu}m$ was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells (결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구)

  • Lee Eun-Joo;Lee Soo-Hong
    • New & Renewable Energy
    • /
    • v.2 no.2 s.6
    • /
    • pp.4-8
    • /
    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

  • PDF

Fabrication and Characterization of Carbon-Coated Cu Nanopowders by Pulsed Wire Evaporation Method (전기선폭발법에 의해 카본 코팅된 Cu 나노분말의 제조 및 특성 연구)

  • Lee, H.M.;Park, J.H.;Hong, S.M.;Uhm, Y.R.;Rhee, C.K.
    • Journal of Powder Materials
    • /
    • v.16 no.4
    • /
    • pp.243-248
    • /
    • 2009
  • Carbon-coated Cu nanopowders with core/shell structure have been successfully fabricated by pulsed wire evaporation (PWE) method, in which a mixed gas of Ar/$CH_4$ (10 vol.%) was used as an ambient gas. The characterization of the samples was carried out using x-ray diffraction (XRD), scanning electron microscope (SEM), and high resolution transmission electron microscope (HRTEM). It was found that the nanoparticles show a spherical morphology with the size ranging of 10-40 nm and are covered with graphite layers of 2-4 nm. When oxygen-passivated Cu nanopowders were annealed under flowing argon gas (600 and 800$^{\circ}C$), the crystallinity of $Cu_2O$ phase and the particle size gradually increased. On the other hand, carbon-coated Cu nanopowders remained similar to as-prepared case with no additional oxide or carbide phases even after the annealing, indicating that the metal nanoparticles are well protected by the carbon-coating layers.

Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Laser Solutions
    • /
    • v.3 no.2
    • /
    • pp.35-43
    • /
    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

  • PDF

Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
    • /
    • v.3 no.1
    • /
    • pp.26-32
    • /
    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

Hydrothernal 방법을 이용한 PV 반사방지용 ZnO 나노 구조의 합성

  • Sin, Beom-Gi;Choe, Ji-Hyeok;Xiong, Junjie;Lee, Tae-Il;Myeong, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2010.05a
    • /
    • pp.28.1-28.1
    • /
    • 2010
  • 다양한 반도체 재료 중 ZnO는 3.2 eV의 넓은 밴드 갭을 통한 고효율의 단파장 전기광학 소자 응용 개발에 대한 연구가 진행중에 있으며, 60 meV의 넓은 엑시톤 결합 에너지로 인해 높은 기계적, 열적 안정성을 가진다. 또한 높은 투과성과 굴절율(n=2)을 가지며 이방성 성장을 통한 텍스처 코팅이 가능함으로 PV(photovoltaics)용 유전체 ARC(anti-reflection coating) 재료로 유망하다. 텍스처된 표면은 빛을 차단시키며, 광대역에서 반사를 억제 시킨다. 또한 나노 구조를 통한 나노 다공성 표면은 광대역에서 빛을 모으는 장점이 있으며 태양전지 효율을 극대화 시킬 수 있다. 본 연구에서는 저온 공정이 가능한 hydrothermal 방법으로 다양한 ZnO 나노 구조를 합성하였다. 사용된 합성 재료로 사용되는 zinc nitrate($Zn(NO_3)_2.6H_2O$), hexamethyltetramine(HMT, $C_6H_{12}N_4$)의 농도 및 합성 온도 변화를 통해 다양한 나노구조(나노선, 나노막대, 나노시트 등)의 형태 및 크기를 제어하였다. 이러한 구조적인 변화를 토대로 텍스처된 다공성 나노구조를 형성시키고, 그 형상과 크기 차이에 따른 AR 특성을 평가하였다. ZnO 나노 구조의 결정학적 특성은 XRD(x-ray diffractometer)를 이용하여 분석하였으며, SEM(scanning electron microscope)을 통해 나노 구조의 모양과 크기를 관찰하였다. 또한 UV-Vis spectrophotometer를 통해 나노 구조의 흡수도와 반사도를 측정하였다.

  • PDF

Enhanced $Al_2O_3/Ti$ Interfacial Properties Using $NbC_xC_{1-x}/Y_2O_3$ Interlayers - (1) Sputtering and Thermal Stability ($NbC_xC_{1-x}/Y_2O_3$ 박막코팅을 이용한 $Al_2O_3/Ti$ 계면특성향상 - (1) 스퍼터링 및 열안정성)

  • 문철희
    • Journal of the Korean Ceramic Society
    • /
    • v.34 no.8
    • /
    • pp.908-913
    • /
    • 1997
  • Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.

  • PDF

Synthesis and Characteristics of New Quaternary Superhard Ti-Mo-Si-N Coatings (새로운 고경도 Ti-Mo-Si-N 코팅막의 합성 및 기계적 특성)

  • Jeon, Jin-Woo;Hong, Seung-Gyun;Kim, Kwang-Ho
    • Journal of the Korean institute of surface engineering
    • /
    • v.39 no.6
    • /
    • pp.245-249
    • /
    • 2006
  • In this study, ternary Ti-Mo-N and new quaternary Ti-Mo-Si-N coatings were synthesized on steel substrates(AISI D2) and Si wafers by a hybrid coating system of arc ion plating (AIP) using Ti target and d.c. magnetron sputtering technique using Mo and Si targets in $N_2/Ar$ gaseous mixture. Ternary Ti-Mo-N coatings were substitutional solid-solution of (Ti, Mo)N and showed maximum hardness of approximately 30 GPa at the Mo content of ${\sim}10$. %. The Ti-Mo-Si-N coating with the Si content of 8.8 at. % was a composite consisting of fine (Ti, Mo)N crystallites and amorphous $Si_3N_4$ phase. The hardness of the Ti-Mo-Si(8.8 at. %)-N coatings exhibited largely increased hardness value of ${\sim}48$ GPa due to the microstructural evolution to the fine composite microstructure and the refinement of (Ti, Mo)N crystallites. The average friction coefficient of the Ti-Mo-Si-N coatings largely decreased with increase of Si content. The microstructures of Ti-Mo-Si-N coatings were investigated with instrumental analyses of XRD, XPS, and HRTEM in this work.

Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells (결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2006.06a
    • /
    • pp.183-186
    • /
    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

  • PDF