• Title/Summary/Keyword: ANODE STRUCTURE

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A LiPF6-LiFSI Blended-Salt Electrolyte System for Improved Electrochemical Performance of Anode-Free Batteries

  • Choi, Haeyoung;Bae, YeoJi;Lee, Sang-Min;Ha, Yoon-Cheol;Shin, Heon-Cheol;Kim, Byung Gon
    • Journal of Electrochemical Science and Technology
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    • v.13 no.1
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    • pp.78-89
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    • 2022
  • ANODE-free Li-metal batteries (AFLMBs) operating with Li of cathode material have attracted enormous attention due to their exceptional energy density originating from anode-free structure in the confined cell volume. However, uncontrolled dendritic growth of lithium on a copper current collector can limit its practical application as it causes fatal issues for stable cycling such as dead Li formation, unstable solid electrolyte interphase, electrolyte exhaustion, and internal short-circuit. To overcome this limitation, here, we report a novel dual-salt electrolyte comprising of 0.2 M LiPF6 + 3.8 M lithium bis(fluorosulfonyl)imide in a carbonate/ester co-solvent with 5 wt% fluoroethylene carbonate, 2 wt% vinylene carbonate, and 0.2 wt% LiNO3 additives. Because the dual-salt electrolyte facilitates uniform/dense Li deposition on the current collector and can form robust/ionic conductive LiF-based SEI layer on the deposited Li, a Li/Li symmetrical cell exhibits improved cycling performance and low polarization for over 200 h operation. Furthermore, the anode-free LiFePO4/Cu cells in the carbonate electrolyte shows significantly enhanced cycling stability compared to the counterparts consisting of different salt ratios. This study shows an importance of electrolyte design guiding uniform Li deposition and forming stable SEI layer for AFLMBs.

Mitigating Metal-dissolution in a High-voltage 15 wt% Si-Graphite‖Li-rich Layered Oxide Full-Cell Utilizing Fluorinated Dual-Additives

  • Kim, Jaeram;Kwak, Sehyun;Pham, Hieu Quang;Jo, Hyuntak;Jeon, Do-Man;Yang, A-Reum;Song, Seung-Wan
    • Journal of Electrochemical Science and Technology
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    • v.13 no.2
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    • pp.269-278
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    • 2022
  • Utilization of high-voltage electrolyte additive(s) at a small fraction is a cost-effective strategy for a good solid electrolyte interphase (SEI) formation and performance improvement of a lithium-rich layered oxide-based high-energy lithium-ion cell by avoiding the occurrence of metal-dissolution that is one of the failure modes. To mitigate metal-dissolution, we explored fluorinated dual-additives of fluoroethylene carbonate (FEC) and di(2,2,2-trifluoroethyl)carbonate (DFDEC) for building-up of a good SEI in a 4.7 V full-cell that consists of high-capacity silicon-graphite composite (15 wt% Si/C/CF/C-graphite) anode and Li1.13Mn0.463Ni0.203Co0.203O2 (LMNC) cathode. The full-cell including optimum fractions of dual-additives shows increased capacity to 228 mAhg-1 at 0.2C and improved performance from the one in the base electrolyte. Surface analysis results find that the SEI stabilization of LMNC cathode induced by dual-additives leads to a suppression of soluble Mn2+-O formation at cathode surface, mitigating metal-dissolution event and crack formation as well as structural degradation. The SEI and structure of Si/C/CF/C-graphite anode is also stabilized by the effects of dual-additives, contributing to performance improvement. The data give insight into a basic understanding of cathode-electrolyte and anode-electrolyte interfacial processes and cathode-anode interaction that are critical factors affecting full-cell performance.

Fabrication of 3-dimensional Sn-C Composites Using Microsphere (미소구체를 이용한 3차원 Sn-C 복합체 제조)

  • Park, Bo-Gun;Kim, Seuk-Buom;Park, Yong-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.9
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    • pp.741-746
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    • 2010
  • Three-dimensionally ordered macro-porous Sn-C composites were prepared by using polystyrene microsphere as a template. The Sn-C composites were composed of well-interconnected pore with circular shape and wall structure with wall thickness of a few tens of nano-meters. This porous three-dimensional structure is readily and uniformly accessible to the electrolyte, which facilitates lithium ion diffusion during charge-discharge reactions. The wall thickness of the composites was increased as the increase of Sn content of the composite. From EDS analysis, it is confirmed that the Sn was dispersed uniformly in Sn-C composites. The capacity was increased as the Sn content increased, which is due to Sn anode with high capacity. The Sn-C composites with high Sn content showed superior cyclic performances. Such enhancement is ascribed to the thick wall thickness and small pore size of the sample with high Sn content. The Sn-C composite with Sn 30 wt% showed relatively high capacity and stable cycle life, however, the stability of the 3-dimensional structure should be enhanced by further work.

Effect of Electrochemical Oxidation Potential on Biofilter for Bacteriological Oxidation of VOCs to $CO_2$

  • Kang Hye-Sun;Lee Jong-Kwang;Kim Moo-Hoon;Park Doo-Hyun
    • Journal of Microbiology and Biotechnology
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    • v.16 no.3
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    • pp.399-407
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    • 2006
  • In this study, an electrical conductive carbon fiber was used as a biofilter matrix to electrochemically improve the biofilter function. A bioreactor system was composed of carbon fiber (anode), titanium ring, porcelain ring, inorganic nutrient reservoir, and VOC reservoir. Electric DC power of 1.5 volt was charged to the carbon fiber anode (CFA) to induce the electrochemical oxidation potential on the biofilter matrix, but not to the carbon fiber (CF). We tested the effects of electrochemical oxidation potential charged to the CFA on the biofilm structure, the bacterial growth, and the activity for metabolic oxidation of VOCs to $CO_2$, According to the SEM image, the biofilm structure developed in the CFA appeared to be greatly different from that in the CF. The bacterial growth, VOCs degradation, and metabolic oxidation of VOCs to $CO_2$ in the CFA were more activated than those in the CF. On the basis of these results, we propose that the biofilm structure can be improved, and the bacterial growth and the bacterial oxidation activity of VOCs can be activated by the electrochemical oxidation potential charged to a biofilter matrix.

Cathode Side Engineering to Raise Holding Voltage of SCR in a 0.5-㎛ 24 V CDMOS Process

  • Wang, Yang;Jin, Xiangliang;Zhou, Acheng;Yang, Liu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.601-607
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    • 2015
  • A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

Inverted OLED Structure for 3.5 inch Full Color AMOLED Display on a-Si TFT Backplane

  • Park, Jae-Hee;Park, Jae-Young;Hwang, Kwang-Jo;Choi, Hee-Dong;Myoung, Nho-Hoon;Lee, Seok-Jong;Park, Seung-Chul;Kim, Jung-Bum;Hahm, Yun-Hye;Noh, Jeoung-Kwen;Lee, Jung-Hyoung;Kim, Jong-Seok;Kang, Min-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.51-54
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    • 2007
  • Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

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The electrochemical Characteristics on the Anode Material of Lithium Ion Secondary Batteries with Discharge Voltage (방전전압에 따른 리튬 이온 2차전지용 음극물질의 전기화학적 특성)

  • Park, Jong-Gwang;Han, Tae-Hui;Jeong, Dong-Cheol;Im, Seong-Hun;Han, Byeong-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.6
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    • pp.328-334
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    • 2000
  • A lithium ion secondary battery using carbon as a negative electrode has been developed. Further improvements to increase the cell capacity are expected by modifying the structure of the carbonaceous material. There are hopes for the development of large capacity lithium ion secondary batteries with long cycle, high energy density, high power density, and high energy efficiency. In the present paper, needle cokes from petroleum were examined as an anode of lithium ion secondary battery. Petroleum cokes, MCL(Molten Caustic Leaching) treated in Korea Institute Energy Research, were carbonized at various temperatures of 0, 500, 700, $19700^{\circ}C$ at heating rate of $2^{\circ}C$/min for lh. The electrolyte was used lM liPF6 EC/DEC (1:1). The voltage range of charge & discharge was 0.0V(0.05V) ~ 2.0V. The treated petroleum coke at $700^{\circ}C$ had an initial capacity over 560mAh.g which beyond the theoretical maximum capacity, 372mAh/g for LiC6. This phenomena suggests that carbon materials with disordered structure had higher cell capacity than that the graphitic carbon materials.

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New Reset Waveform for a Large-Sustain-Gap Structure in AC PDPs (AC PDP의 장방전 구조의 구동을 위한 새로운 리셋파형)

  • Kim, Sun;Kim, Dong-Hun;Song, Tae-Yong;Kim, Ji-Yong;Lee, Seok-Hyun;Seo, Jeong-Hyun
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1544-1545
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    • 2006
  • In this paper, we present a new reset waveform for a large-sustain-gap structure in at PDPs. In the driving of the large-sustain-gap structure with a conventional ramp reset waveform, we cannot avoid the condition of an address being a cathode, which causes lots of trouble in stabilizing a reset discharge. To solve these problems, we use the square pulse instead of the conventional rising ramp pulse. Before making a strong discharge between the address (cathode) and scan (anode) electrodes, we make a priming discharge between the address (anode) and the scan (cathode) electrodes to stabilize the strong discharge in which the address electrodes are the cathode. With this scheme, we obtained 60V minimum address voltage and 145V maximum address voltage in $250{\mu}m$ and $350{\mu}m$ gap structures.

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Analysis of the electrical characteristics of SOI LIGBT with dual-epi layer (이중 에피층을 가지는 SOI LIGBT의 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;Kim, Ki-Hyun;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.288-291
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    • 2004
  • Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with $T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is $800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is $700A/cm^2$ and 55V.

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Device characteristics of 2.5kV Gate Commutated Thyristor (2-5kV급 Gate Commutated Thyristor 소자의 제작 특성)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Seo, Kil-Soo;Kim, Nam-Kyun;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.280-283
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    • 2004
  • This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

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