• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.431-432
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• 2008

HIT Solar Cell은 단결정 실리콘 웨이퍼가 초박막 amorphos 실리콘 층으로 싸여있는 구조이다. HIT Solar Cell에서 amorphos 실리콘의 두께와 도핑 농도는 태양전지의 효율을 결정하는 매우 중요한 요인이다. 본 논문에서는 높은 효율을 갖는 태양전지 설계를 위해 AFORS HET 프로그램을 이용하여 TCO_a-Si:H(p)_a-Si:H(i)_c-Si(n)_Al 구조를 설계했다. 후에 a-Si:H(p)의 두께와 a-Si:H(i) 의 두께를 가변하며 효율을 측정하였고, p-i-n 구조에서 n+ 층을 추가함에 따라 변하는 효율을 측정하였다. 최적화 한 결과 $V_{oc}$ = 693mV, $J_{sc}$ = 3891mA/$cm^{-2}$, FF = 8363%, $E_{ff}$ = 22.55% 의 고효율을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.450-451
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• 2008

Amorphous silicon Solar cell has n-i-p structure in general, and each layer's thickness and doping concentration are very important factors which are as influential on efficiency of salar cell. Using AFORS HET simulation to get the high efficiency, by adjusting n layer's thickness and doping concentration, p layer's doping concentration. The optimized values are a-Si:H(n)'s thickness of 1nm, a-Si:H(n)r's doping concentration of $2\times10^{20}cm^{-3}$, a-Si:H(p+)r's doping concentration of $1\times10^{19}cm^{-3}$. After optimization, the solar cell shows $V_{oc}$=679.5mV, $J_{sc}$=39.02mA/$cm^2$, FF=83.71%, and a high Efficiency=22.21%. Though this study, we can use this study for planning or manufacturing solar cell which has high efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.448-449
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• 2008

HIT(Heterojunction with intrinsic thin layer) solar cell은 결정 실리콘 (c-Si)을 n-type으로 제작시 수율이 어렵고 결정 실리콘 (c-Si)을 p-type위에 제조하는 것이 보다 보편적인 방법이므로 베이스의 결정 실리콘에는 p-type을, 그 위에는 진성 층(intrinsic layer) 그리고 반투명 전극의 아래에 제조되는 비정질 실리콘 (a-Si)을 n-type으로 하여 베이스 층과 TCO 후면 층의 두께, 도핑 농도 (doping concentration)와의 관계를 확인하여 본다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.232-232
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.194.2-194.2
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.366-366
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.