• 한국인쇄학회지
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• 제29권3호
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• pp.97-104
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• 2011

The storing ability of information of optical disks directly depends on the physical property of recording unit cells. It means that the degradation of optical disks ultimately causes the loss of the physical and chemical properties of recording unit cells and leads also information, too. We investigated the degradation and life time of optical disks which tell us the longevity of the preservation of information. Optical disks were aged using the accelerated aging system and studied by optical reflectivity spectroscopy and atomic force microscopy(AFM), and the preservation environment of electronic media in National central library of Korea also were analysed. Results show that the double reflective coated optical disks have good preservation of recording information but revealed some deformation of dye area in the AFM images. It means that we should include the mechanical and chemical degradation of the optical disks in the life time expectation evaluation.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 춘계학술발표대회 논문집
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• pp.265-268
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• 2005

A new method for measurement of the pore size in a nanohoneycomb structure using atomic force microscopy (AFM) was proposed. Porous type anodic aluminum oxide (AAO) was fabricated as a nanohoneycomb structure to measure the pore size. For measuring pore sizes from AFM images, a criterion was set in porous type AAO. The pore sizes from AFM images were compared with those from SEM images, and the results showed good agreement. The relationship between the pore size and widening time was found to be linear in the range of this study. It was understood as the synchronized effects of the impurity gradient in outer oxide of AAO, mechanical packing and mass transfer increase.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1773-1777
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• 2008

The proper orthogonal decomposition(POD) is used to the modal analysis of microcantilever of dynamic mode atomic force microscopy(AFM). The proper orthogonal modes(POM) are extracted from vibrating signals of microcantilever when it resonates and taps the sample. We present recent ideas based on POD and detailed experiments that yield new perspectives into the microscale structures. The linearized modeling technique based on POD is very useful to show the principal characteristics of the complex dynamic responses.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.1391-1395
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• 2006

In non-contact mode atomic force microscopy, the response of a resonating tip is used to measure the nanoscale topography and other properties of a sample surface. However, the tip-surface interactions can affect the tip response and destabilize the non-contact mode control. Especially it is difficult to obtain a good scanned image of high adhesion surfaces such as polymers using conventional hard NCHR tip and non-contact mode control. In this study, experimental investigation is made on the non-contact mode imaging and we report the microcantilever having low stiffness (OMCL) is useful to measure the properties of samples such as elasticity. In addition, we proved that it was adequate to use low stiffness microcantilever to obtain a good scanned image in AFM for the soft and high adhesion sample.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Tribology and Lubricants
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• 제21권5호
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• pp.221-226
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• 2005

A new calibration method for exact measurement of friction force in atomic force microscope (AFM) is presented. A new conversion factor involves a contact factor affected by tip, cantilever and contact stiffness. Especially the effect of contact stiffness on the conversion factor between lateral force and lateral signal is considered. Conventional conversion factor and a new modified conversion factor were experimentally compared. Results showed that a new calibration method could minimize the effect of normal load on friction force and improve the conventional method. A new method could be applied to the specimens with different physical properties.

• Applied Microscopy
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• 제52권
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• pp.1.1-1.8
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• 2022

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto fattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.35-38
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• 2012

In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to $200{\mu}A$ at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

• 대한기계학회논문집A
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• 제30권11호
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• pp.1335-1347
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• 2006

Surface energies calculated from measured contact angles between several solutions and test samples, such as Si wafer, $Al_2O_3$, $SiO_2$, PTFE(Polytertrafluoroethylene), and DLC(Diamond Like Carbon) films, based on geometric mean method and Lewis acid base method. In order to relate roughness to adhesion force, surface roughness of test samples were scanned large area and small by AFM(Atomic Force Microscopy). Roughness was representative of test samples in large scan area and comparable with AFM tip radius in small scan area. Adhesion forces between AFM tip and test samples were matched well with order of roughness rather then surface energy. When AFM tips having different radius were used to measure adhesion force on DLCI film, sharper AFM tip was, smaller adhesion force was measured. Therefore contact area was more important factor to determine adhesion force.