• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.354-355
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• 2013

최근 디스플레이 분야에서 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 a-Si:H에 비해 비정질 상태에서도 비교적 높은 이동도를 가지고 다결정 Si 반도체에 비해 저온공정이 가능하고 대면적화가 용이한 장점 때문에 주목받고 있다. 또한 넓은 밴드갭을 가지기 때문에 가시광선 영역에서 투명하여 투명소자에도 응용이 가능하다. 본 연구에서는 RF magnetron sputtering법을 이용하여 RF power의 변화에 따라 IGZO 박막의 positive bias stress (PBS)에 대한 안정성을 조사하였다. 소결된 타겟으로는 In:Ga:ZnO를 각각 2:2:1 mol%의 조성비로 소결하여 이용하였고, 공정 조건은 초기 압력 Torr, 증착 압력 Torr, Ar：O2=18：12 sccm로 고정하였다. 공정 변수로는 130 W, 150 W, 170 W, 200 W로 변화를 주어 실험을 진행하였다. PBS 측정은 gate bias를 10 V로 고정하여 stress 시간을 각각 0, 30, 100, 300, 1,000, 3,000, 7,000초를 적용하였다. 측정 결과 RF power가 증가할수록 문턱전압의 변화량이 증가하는 것을 보였다. 130 W의 경우 4.47 V의 변화량을 보였지만 200 W의 경우는 10.01 V로 증가되어 나타났다. 따라서 RF power을 낮추어 만들어진 소자의 경우 RF power를 높여 만들어진 소자에 비해 PBS에 대한 안정성이 더 높은 결과를 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.65-68
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• 2009

본 연구에서는 eagle 2000 glass위에 APCVD(atmospheric CVD)증착법으로 $SnO_2$:F 박막을 제조하였다. 공정 온도, doping 농도, TTC(Tin tetrachloride)와 $H_2O$, $CH_3OH$의 조성비를 공정 변수로 두었으며, 각 변수에 대한 전기적, 광학적 특성 및 결정성을 확인하였다. hall measurement를 이용 제작된 박막의 전기적 특성을 확인 하였고, uv-VIS spectroscopy, hazemeer를 이용 박막의 광학적 특성을 확인 하였다. 또한 XRD, FESEM, AFM을 이용 박막의 결정성 및 표면 특성을 확인 하였다. 박막의 결정성을 결정짓는 증착 온도의 경우 $590^{\circ}C$에서 완벽한 Tetragonal rutile 형태의 결정성을 보였으며 $SnO_2$:F film $1{\mu}m$ thickness에서 $10({\Omega}/{\square})$ 내외의 우수한 면저항값과 $30(cm^2/Vs)$ 이상의 mobility값을 확인 하였으며, 가시광영역대 에서 높은 투과율과 우수한 haze값을 얻었다.

• Journal of Energy Engineering
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• v.8 no.1
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• pp.150-158
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• 1999

본 연구는 저온플라즈마를 이용하여 배기가스중의 SOx와 NOx를 동시에 처리하는 공정을 개발하는 것으로서, 최적의 반응제 선정과 효율적인 공정의 구성을 위해 SOx, NOx와 반응제와 반응기구를 밝히고자 하였다. 실험은 1.0 N㎥/h의 모사가스를 이용한 기초실험과 20 N㎥/h의 실제 연소가스를 이용한 실험으로 진행되었으며, 반응제로는 NH3와 파리핀계 및 올레핀계 탄화수소를 사용하였다. NH3를 반응제로 한 SO2 제거반응은 비플라즈마 조건에서는 NH4HSO3, 플라즈마 조건에서는 (NH4)2SO4의 생성반응이었고, 두 조건 모두 높은 제거율을 나타냈다. 반응제를 사용하지 않은 플라즈마 조건에서 SO2는 환원반응이 일어나고 O2 농도의 증가는 역반응을 증가시키는 화학평형에 의해 SO2의 제거율이 감소되었다. 플라즈마 조건에서 NO는 O2농도가 낮은 경우는 NO의 환원반응이 주로 일어나고, O2 농도가 높을 경우는 산화반응이 지배적이었다. 올레핀계 탄화수소는 플라즈마 조건에서 NO 산화 반응에 탁월한 효과를 보였을 뿐만 아니라 SO2 제거에도 효과를 보여 최대 40%의 제거율을 나타냈으며, NH3의 사용을 줄일 수 있음을 확인하였다.

• KSBB Journal
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• v.23 no.1
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• pp.83-89
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• 2008

Food wastewater derived from the three-stage methane fermentation system developed in this lab contained high concentration organic substances. The organic wastewater should be treated through advanced wastewater treatment system to satisfy the "Permissible Pollutant Discharge Standard of Korea". In order to treat the organic wastewater efficiently, several optimum operation conditions of a modified $UV/TiO_{2}$ photocatalytic system have been investigated. In the first process, wastewater was pre-treated with $FeCl_{3}$. The optimum pH and coagulant concentration were 4.0 and 2000mg/L, respectively. Through this process, 52.6% of CODcr was removed. The second process was $UV-TiO_{2}$ photocatalytic reaction. The optimum operation conditions for the system were as follows: UV lamp wavelength, 254 nm; wastewater temperature, $40^{\circ}C$; pH 8.0; and air flow rate, 40L/min, respectively. Through the above two combined processes, 69.7% of T-N and 70.9% of CODcr contained in the wastewater were removed.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.4
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• pp.413-418
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• 2021

Nano-materials with high effective surface areas have been applied to functional materials, such as high sensitive gas sensors and biosensors and high-efficiency catalytic materials. In this study, titanate sheets with a 3D nano-wall-like structure, high effective surface area, were synthesized vertically to the substrate by a chemical bath deposition (CBD) process using a Ti sheet and urea. The synthesis temperature and synthesis duration time were controlled to the optimal conditions of a 3D nano-wall-like structure in the CBD process. The synthesized ammonium titanate sheets with a 3D nano-wall-like structure were annealed in air to transform to TiO2 with a 3D nano-wall-like structure for various applications. As a result, the optimal temperature in the CBD process for the synthesis of a uniform ammonium titanate sheet with a 3D nano-wall-like structure was 90 ℃. TiO2 with a 3D nano-wall-like structure was obtained from the ammonium titanate sheet with a 3D nano-wall-like structure by annealing above 550 ℃ for three hours. In particular, TiO2 with a 3D nano-wall-like structure with a dominant rutile phase was obtained by post-annealing at 700 ℃. On the other hand, damage to the 3D nano-wall edge was observed after 700 ℃ post-annealing.

• Journal of environmental and Sanitary engineering
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• v.15 no.4
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• pp.26-34
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• 2000

In order to treat the dyeing wastewater, the $UV/TiO_2/H_2O_2$ system was investigated, and proper pretreatment methods were examined to reduce the load on the system considering economical and technical efficiency. The results of this study were as follows: 1. $UV/TiO_2/H_2O_2$ system with pretreatment process was adopted, the result of Chemical coagulation and pH control units was $pH{\;}11{\;}{\rightarrow}{\;}coagulation{\;}{\rightarrow}{\;}pH{\;}4$ and the optimum dosage of $FeCl_3$ was $600mg/{\ell}$. 2. Proper dosage of $TiO_2$ in the $UV/TiO_2/H_2O_2$ system with pretreatment process was $2g/{\ell}$ and $H_2O_2$ was $1000mg/{\ell}$, UV contact time was 20min to get $200mg/{\ell}$ of $COD_{Cr}$.

• Journal of the Korean Institute of Gas
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• v.22 no.1
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• pp.26-36
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• 2018

Conventional nickel-based catalyst processes used for dry reforming reactions have high activation temperatures and problems such as carbon deposition and metal sintering on the active sites of the catalyst surface. In this study, the characteristics of butane dry reforming reaction were investigated by using DBD plasma combined with catalytic process and compared with existing catalyst alone process. The physical and chemical properties of the catalysts were investigated using a surface area & pore size analyzer, XRD, SEM and TEM. Using $10%Ni/{\gamma}-Al_2O_3$ at $580^{\circ}C$, in the case of the catalyst+plasma process, the conversion of carbon dioxide and butane were improved by about 30% than catalyst alone process. When the catalyst+plasma process, the conversion of carbon dioxide and butane and the hydrogen production concentration are enhanced by the influence of various active species generated by the plasma. In addition, it was found that the particle size of the catalyst is decreased by the plasma in the reaction process, and the degree of dispersion of the catalyst is increased to improve the efficiency.

• Resources Recycling
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• v.31 no.2
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• pp.20-32
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• 2022

This study implemented a chelating agent (Ethylenediaminetetraacetic acid, EDTA) in purification to obtain high-purity vanadium pentoxide (V₂O₅) for use in VRFB (Vanadium Redox Flow Battery). V₂O₅ (powder) was produced through the precipitation recovery of ammonium metavanadate (NH₄VO₃) from a vanadium solution, which was prepared using a low-purity vanadium raw material. The initial purity of the powder was estimated to be 99.7%. However, the use of a chelating agent improved its purity up to 99.9% or higher. It was conjectured that the added chelating agent reacted with the impurity ions to form a complex, stabilizing them. This improved the selectivity for vanadium in the recovery process. However, the prepared V₂O₅ powder exhibited higher contents of K, Mn, Fe, Na, and Al than those in the standard counterparts, thus necessitating additional research on its impurity separation. Furthermore, the vanadium electrolyte was prepared using the high-purity V₂O₅ powder in a newly developed direct electrolytic process. Its analytical properties were compared with those of commercial electrolytes. Owing to the high concentration of the K, Ca, Na, Al, Mg, and Si impurities in the produced vanadium electrolyte, the purity was analyzed to be 99.97%, lower than those (99.98%) of its commercial counterparts. Thus, further research on optimizing the high-purity V₂O₅ powder and electrolyte manufacturing processes may yield a process capable of commercialization.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.478-478
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• 2010

대기압 플라즈마 공정은 진공 플라즈마 공정에 비해 장치의 경제성 및 규모면에서 많은 장점을 갖고 있어 대기압 공정에 대한 연구가 필요하다. 본 연구는 대기압 DC Arc Plasmatron을 이용하여 기체의 유량, 전류, plasmatron과 Si wafer 간의 거리를 변화시켜 이에 대한 Si wafer에 식각률(etching rate)을 확인하고 최적화 하였다. Ar은 2000sccm, $CF_4$는 50, 100sccm, 그리고 $O_2$는 0~1000sccm의 유량에 변화를 주었고 전류는 50A, 70A에서 식각하였다. 분석을 위해 Si wafer를 SEM(scanning electron microscope) 측정을 하였고, 그 결과 전류는 70A에서 기체 유량은 $CF_4$는 100sccm, $O_2$는 500sccm 일 때 식각률이 높게 나타났다. 그리고 전류와 유량을 위와 같은 조건에서 Plasmatron과 Si wafer 간의 거리를 5mm~15mm 변화를 주었을 때 Si wafer에 식각률을 측정해 본 결과 거리가 5mm일 때 식각률이 가장 높음을 확인 할 수 있었다. 아울러 거리를 변화시켰을 때가 유량이나 전압을 변화시킨 것 보다 식각률의 변화가 큰 경향을 보임을 알 수 있었다.