• Korean Journal of Materials Research
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• v.9 no.2
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• pp.211-216
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• 1999

Corrosion behavior of austenitic stainless steels of SUS 316L and SUS304L in molten salt of LiCl and $LiCl/Li_2O$ has been investigated in the temperature range of $650~850^{\circ}C$. Corrosion products of SUS316L and 304L in hot molten salt consisted of two layers-an outer layer of Li(CrFe)$O_2$and an inner layer of$Cr_2O_3$. The corrosion layer was uniform in molten salt of LiCl, but the intergranular corrosion occurred in addition to the uniform corrosion in mixed molten salt of LiCl/$Li_2O$. The corrosion rate increased slowly with the increase of temperature up to $750^{\circ}C$, but above $750^{\circ}C$ rapid increase in corrosion rate observed. SUS316L stainless steel showed slower corrosion rate than SUS 304L, exhibiting higher corrosion resistance in the molten salt.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.84-88
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• 2009

Al doped $LiMn_2O_4$ cathode powders with fine size were synthesized by an ultrasonic spray pyrolysis method from the spray solution with citric acid and ethylene glycol. The as-prepared powders with spherical shape, porous structure and micron size turned into $LiMn_{11/6}Al_{1/6}O_4$ powders with micron size and regular morphology after post-treatment above $800^{\circ}C$. The $LiMn_{11/6}Al_{1/6}O_4$ powders had low initial discharge capacity of 94 mAh/g at a post-treatment temperature of $700^{\circ}C$. As the post-temperature increased from $750^{\circ}C$ to $1,000^{\circ}C$, the initial discharge capacities of the $LiMn_{11/6}Al_{1/6}O_4$ powders changed from 103 to 117 mAh/g. The $LiMn_{11/6}Al_{1/6}O_4$ powders had the maximum discharge capacity at a post-treatment temperature of $750^{\circ}C$. However, the $LiMn_{11/6}Al_{1/6}O_4$ powders post-treated at a temperature of $900^{\circ}C$ had the good cycle properties. The discharge capacities of the $LiMn_{11/6}Al_{1/6}O_4$ powders dropped from 107 to 100 mAh/g (93% capacity retention) by the 70th cycle at a current density of 0.1 C.

• Journal of the Mineralogical Society of Korea
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• v.26 no.1
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• pp.45-54
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• 2013

In order to dissolve Au, Ag, and other valuable metals from gold ore concentrate, raw gold concentrate was pre-treated by roasting and salt-roasting at $750^{\circ}C$. The roasted concentrate was treated with aqua regia digestion to dissolve the valuable metals and higher amount of Au, Ag, and valuable metals were extracted from the roasted concentrates than from the raw concentrate. Higher amount of these metals were also extracted from the salt-roasted concentrate than from the roasted concentrate. The results of the gold dissolution experiments showed that the gold dissolution was most efficient when particle size, roasting temperature, and the percentage of added salt in salt roasting were about $181{\sim}127{\mu}m$, $750^{\circ}C$, and was 20.0%, respectively. The XRD analysis suggests that quartz and pyrite were not destroyed even through roasting at $750^{\circ}C$ and decomposition with aqua regia. However, through salt roasting, pyrite was completely decomposed, whereas quartz could not be destroyed through salt-roasting at $750^{\circ}C$ and aqua regia digestion. Accordingly, it was expected that the gold contained in quartz can not be dissolved through salt-roasting and treatment with aqua regia.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1090-1098
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• 1998

$RuO_2$ thin films were deposited on Si and Ru/Si substrates by rf magnetron reactive sputtering and annealed in oxygen atmosphere(1atm) to investigate their thermal stability and diffusion barrier property. $RuO_2$ thin films were thermally stable up to 700\ulcorner for 10min. in oxygen atmosphere and showed excellent barrier property against the interdiffusion of silicon and oxygen. After annealing at $750^{\circ}C$ , however, volatilization to higher oxide occurred at the surface and inside of $RuO_2$ thin film and diffusion barrier property was also deteriorated. When annealed at $800^{\circ}C$, $RuO_2$thin film showed a different microstructure from that of $RuO_2$ thin film annealed at 75$0^{\circ}C$. It is likely that surface defect structure of $RuO_2$, $RuO_3$, and excess oxygen had an influence on the mode of volatilization with increasing annealing temperature.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.1-6
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• 1995

Submicrometer, monosized ceramic powder of $Al_2TiO_5$$Al_2O_3$ ethanolic solutions. All particles produced by sol-gel-process were amprphous, monodispersed and with a narrow particle-size distribution. Compacts fired above $1300^{\circ}C$ formed aluminium titanate. Mullite formed first at $1480^{\circ}C$. After decomposition test at $1100^{\circ}C$, and cyclic thermal decomposition test at 750-1400-$750^{\circ}C$ for 100hrs., aluminium titanate was well stablized by composition with mullite.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.58-63
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• 2004

The oxidation behavior of Ti-Nb alloys was studied in dry atmosphere. After vacuum arc melting and hot rolling treatment, Ti-Nb alloys were oxidized at $450^{\circ}C$∼$750^{\circ}C$. The oxidation behaviors between matrix and oxide scale were analyzed by SEM, XPS and XRD. Ti-Nb alloys had higher oxidation resistance than pure Ti at $750^{\circ}C$. XPS analysis of oxide film revealed that $TiO_2$ oxide was formed on the top of surface. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$ which obey the parabolic law.

• Journal of Powder Materials
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• v.23 no.1
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• pp.33-37
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• 2016

10 wt.% and 20 wt.%$Li-TiO_2$ composite powders are synthesized by a sol-gel method using titanium isopropoxide and $Li_2CO_3$ as precursors. The as-received amorphous 10 wt.%$Li-TiO_2$ composite powders crystallize into the anatase-type crystal structure upon calcination at $450^{\circ}C$, which then changes to the rutile phase at $750^{\circ}C$. The asreceived 20 wt%$Li-TiO_2$ composite powders, on the other hand, crystallize into the anatase-type structure. As the calcination temperature increases, the anatase $TiO_2$ phase gets transformed to the $LiTiO_2$ phase. The peaks for the samples obtained after calcination at $900^{\circ}C$ mainly exhibit the $LiTiO_2$ and $Li_2TiO_3$ phases. For a comparison of the photocatalytic activity, 10 wt.% and 20 wt.% $Li-TiO_2$ composite powders calcined at $450^{\circ}C$, $600^{\circ}C$, and $750^{\circ}C$ are used. The 20 wt.%$Li-TiO_2$ composite powders calcined at $600^{\circ}C$ show excellent efficiency for the removal of methylorange.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.236-237
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• 2005

The structural properties of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films with post-annealing temperature were investigated. $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with optimum deposition condition. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was post-annealed at 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$ in furnace,respectively. Increasing the post-annealing temperature, the grain size, density and peak intensity of (117) and c-axis orientation were increased. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films that annealed at 750$^{\circ}C$ exhibited well crystallized phase and had no vacancy and grain was uniform. but there are some secondary phases observed. At this time, the average thickness of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was 2000 ${\AA}$.