• Proceedings of the Safety Management and Science Conference
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• 2013.04a
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• pp.163-172
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• 2013

In this Paper, We study on establish for unit of measure. Quality means abstract for customer needs. we surveyed unit of measurement of quality feature of Juran, Taguchi, 6 sigma method. We suggest unit of measurement of quality feature. Each enterprise can use defining own unit of measurement of quality feature. Effect is expected in enterprise that these proposals do quality control. There is meaning in direction that measuring mean of quality feature that propose in this treatise understands actuality to be deeply and reconcile exact point of theory.

• Proceedings of the Safety Management and Science Conference
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• 2011.11a
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• pp.157-165
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• 2011

In this Paper, We study on establish for unit of measure. Quality means abstract for customer needs. we surveyed unit of measurement of quality feature of Juran, Taguchi, 6 sigma method. We suggest unit of measurement of quality feature. Each enterprise can use defining own unit of measurement of quality feature. Effect is expected in enterprise that these proposals do quality control. There is meaning in direction that measuring mean of quality feature that propose in this treatise understands actuality to be deeply and reconcile exact point of theory.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.704-709
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• 1994

The $(LaS)_xCrS_2(x \approx 1.20$) of the incommensurate misfit layer was systhesized from reactant mixture of$La_S_3$,Cr and S at 1273K. Powder X-ray diffration of $(LaS)_xCrS_2(x \approx 1.20$) was indexed as a complex structure consisted with a monoclinic LaS-sublattice, a triclinic $CrS_{2}$-sublattice and their superlattice. The temperature dependence of sublattice dimension was investigated by the X-ray diffraction analysis at low temperature. The magnetic susceptibility of $(LaS)_xCrS_2(x \approx 1.20$) was measured between 77K and room temperature using a Faraday balance method. $(LaS)_xCrS_2(x \approx 1.20$) was paramagnetic on a $\sigma$-H plot at room temperature. The observed effective magnetic moment( p dr) was in fair agreement with the value calculated by spin-only contribution for $Cr^{3+}$ and spin and orbital contribution for $La^{3+}$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.9
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• pp.1408-1414
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• 2004

The use of flip-chip technology has many advantages over other approaches for high-density electronic packaging. ACF (anisotropic conductive film) is one of the major flip-chip technologies, which has short chip-to-chip interconnection length, high productivity, and miniaturization of package. In this study, thermal fatigue lift of ACF bonding flip-chip package has been predicted. Elastic and thermal properties of ACF were measured by using DMA and TMA. Temperature dependent nonlinear hi-thermal analysis was conducted and the result was compared with Moire interferometer experiment. Calculated displacement field was well matched with experimental result. Thermal fatigue analysis was also conducted. The maximum shear strain occurs at the outmost located bump. Shear stress-strain curve was obtained to calculate fatigue life. Fatigue model for electronic adhesives was used to predict thermal fatigue life of ACF bonding flip-chip packaging. DOE (Design of Experiment) technique was used to find important design factors. The results show that PCB CTE (Coefficient of Thermal Expansion) and elastic modulus of ACF material are important material parameters. And as important design parameters, chip width, bump pitch and bump width were chose. 2$^{nd}$ DOE was conducted to obtain RSM equation far the choose 3 design parameter. The coefficient of determination ($R^2$) for the calculated RSM equation is 0.99934. Optimum design is conducted using the RSM equation. MMFD (Modified Method for feasible Direction) algorithm is used to optimum design. The optimum value for chip width, bump pitch and bump width were 7.87mm, 430$\mu$m, and 78$\mu$m, respectively. Approximately, 1400 cycles have been expected under optimum conditions. Reliability analysis was conducted to find out guideline for control range of design parameter. Sigma value was calculated with changing standard deviation of design variable. To acquire 6 sigma level thermal fatigue reliability, the Std. Deviation of design parameter should be controlled within 3% of average value.

• Journal of Korea Foundry Society
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• v.26 no.2
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• pp.77-84
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• 2006

The effect of alloy composition on the glass forming ability (GFA) of the Ca-rich Ca-Mg-Zn alloys has been investigated in $Ca_{65}Mg_{5+x}Zn_{30-x}$ and $Ca_{55+x}Mg_{15}Zn_{30-x}$ (x=0, 5, 10, 15, 20) alloys. In a wide composition range of 15-25% Zn and 10-20% Mg bulk metallic glass (BMG) samples with the diameter larger than 6 mm are fabricated by conventional copper mold casting method in air atmosphere. Among the alloys investigated, the $Ca_{65}Mg_{15}Zn_{20}$ alloy exhibits the highest GFA enabling to form BMG sample with the diameter of at least 15 mm. The crystalline phase formed during solidification of $Ca_{65}Mg_{15}Zn_{20}$ ($D_{max}=15\;mm$) could be identified as a mixture of $Ca_3Zn$ and $CaMg_2$ cause by the redistribution of the constituent elements on long-range scale. The compressive fracture strength and fracture elongation of the $Ca_{65}Mg_{15}Zn_{20}$ BMG are 602 MPa and 2.08% respectively. The ${\sigma}$ parameter which has been recently proposed for evaluating GFA exhibits better correlation with GFA of Ca-Mg-Zn alloys than other parameters suggested so far such as ${\Delta}T_x$, $T_{rg}$, K, ${\gamma}$, and ${\Delta}T^*$ parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.23-23
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• 2009

It has been challenging to increase the thermoelectric figure of merit ($ZT=S^2{\sigma}T/\kappa$) of materials, which determine the efficiency of thermoelectric devices, because the three parameters Seebeck coefficient (S), electrical conductivity ($\sigma$), and thermal conductivity ($\kappa$) of bulk materials are inter-dependent. With the development of nanotechnology, ZT values of nanostructured materials are predicted to be enhanced by classical size effects and quantum confinement effects. In particular, Bi nanowires were suggested as one of ideal thermoelectric materials due to the expected quantum confinement effects for the simultaneous increase in Sand. In this work, we have investigated the thermal conductivity of individual single crystalline Bi nanowires with d = 98 nm and d = 327 nm in the temperature range 40 - 300 K using MEMS devices. The for the Bi nanowire with d = 98 nm was observed to be ~ 1.6 W/m-K at 300 K, which is much lower than that of Bi bulk (8 W/m-K at 300 K). This indicates that the thermal conductivity of the Bi suppressed due to enhanced surface boundary scattering in one-dimensional structures. Our results suggest that Bi nanowires grown by stress-induced method can be used for high-efficiency thermoelectric devices.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.2
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• pp.231-236
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• 2012

This work presents the application of the DFSS (Design for Six Sigma) methodology to optimizing both the linearity and the sensitivity of the output voltage of a Hall-effect rotary position sensor. To this end, the dimensions and relative positions of a permanent magnet with reference to a Hall sensor are selected as the design factors for a full factorial design. In order to evaluate the output voltage of the rotary position sensor at each run in the experimental design, analytical solutions to the magnetic flux density were obtained using the Biot-Savart law and the relations between the magnetic flux density and the output voltage intrinsic to a Hall sensor. Through measurements of the improved output voltage of the rotary position sensors manufactured using the optimized design factors, the proposed method is shown to be simple and practical.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1292-1300
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• 1995

The ionic conductivity of NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM). There were included two conduction paths: (1) Na1-Na2 and (2) Na1-Na2 including Na2-Na2. We assumed that mid-Na ions provde an additional driving force for Na mobile ions due to the interionic repulsion between Na1 and Na2 ions. The inflection point of vacancy availability factor, V has been shown at nearby x=2, the maximum mid-Na ions. The inflection point of vacancy availability factor, V has been shown at nearby x=2, the maximum mid-Na sites are occupied. The effective jump frequency factor, V has been shown at nearby x=2, the maximum mid-Na sites are occupied. The effective jump frequency factor, W increased rapidly with the composition at low temperature, but decreased at high temperature region. On Na1-Na2 conduction path, the minimum of charge correlation factor, fc and the maximum of $\sigma$T were appeared at x=2.0. this indicated that mid-Na ions affect on the high ionic conductivity behavior. At the whole range of NASICON composition, 1n $\sigma$T vs. 1/T* plots have been shown Arrhenius behavior but 1n (VWFc) vs. 1/T* have been shown the Arrhenius type tendency at x=2, which mid-Na is being the maximum. The results of MCM agreed with the experimental one when the chosen saddle point value was 6$\varepsilon$ : 3$\varepsilon$. Here the calculated characteristic parameter of materials, K and the phase transition temperature were -4.001$\times$103 and 178$^{\circ}C$ (1/T*=1.92, 1000/T=2.22), respectively.

• Macromolecular Research
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• v.12 no.4
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• pp.422-426
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• 2004

Solid polymer electrolytes based on poly(ethylene glycol)-polyurethane (PEG-PU) complexed with LiClO$_4$ salt have been prepared by the solvent casting method. A PEG-PU material (PEG:4,4'-diphenylmethane diisocyanate: l,4-butanediol = 1:2:1) was synthesized through a typical two-step condensation reaction. We investigated the effects of the salt concentration on the ionic conductivity ($\sigma$) and the glass transition temperature (T$_{g}$ ) of the complex electrolytes by using alternating current impedance spectroscopy, differential scanning calorimetry, and dynamic mechanical thermal analysis. The measured values of both $\sigma$ and T$_{g}$ exhibited similar tendencies in that they had maxima within the range studied, probably because of two opposite effects, i.e., the increased number of carrier ions and the decreased chain mobility (or increased T$_{g}$ ) caused by the increase in the salt concentration. The highest conductivity, on the order of 2.43 ${\times}$ 10$^{6}$ S$cm^{-1}$ /, was obtained at an [O]/[Li$^{+}$] ratio of ca. 16 (0.92 ㏖ salt per kg of matrix polymer).

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.