• Title/Summary/Keyword: 65nm

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65 nm CMOS Base Band Filter for 77 GHz Automotive Radar Compensating Path Loss Difference (경로 손실 변화의 보상이 가능한 77 GHz 차량용 레이더 시스템을 위한 65 nm CMOS 베이스밴드 필터)

  • Kim, Young-Sik;Lee, Seung-Jun;Eo, Yun-Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.10
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    • pp.1151-1156
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    • 2012
  • In this paper, the baseband filter is proposed in order to maintain a constant sensitivity regardless of distances for 77 GHz automotive radar system. Using existing DCOC loop circuit can remove DC offset and also cancel differences of received power depending on the distance. Measured results show that the maximum gain is 51 dB and high pass cutoff frequency can be tuned from 5 kHz to 15 kHz. The slope of high pass filter can be tuned from -10 to -40 dB/decade for the distance compensation. The measured NF and IIP3 are 26 dB and +4.5 dBm with 4.3 mA at 1.0 V supply voltage, respectively. The fabricated die size $500{\mu}m{\times}1,050{\mu}m$ excluding the in/out pads.

A 65-nm CMOS Low-Power Baseband Circuit with 7-Channel Cutoff Frequency and 40-dB Gain Range for LTE-Advanced SAW-Less RF Transmitters (LTE-Advanced SAW-Less 송신기용 7개 채널 차단 주파수 및 40-dB 이득범위를 제공하는 65-nm CMOS 저전력 기저대역회로 설계에 관한 연구)

  • Kim, Sung-Hwan;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.3
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    • pp.678-684
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    • 2013
  • This paper describes a low-power baseband circuit for SAW-less LTE-Advanced transmitters. The proposed transmitter baseband circuit consists of a 2nd-order Tow-Thomas type active RC-LPF and a 1st-order passive RC LPF. It can provide a 7 multi-channel cut-off frequencies and wide gain control range of -41 dB ~ 0 dB with a 1-dB step. The proposed 2nd-order active RC-LPF adopts an op-amp in which three other sub-op amps are in parallel connected to reduce DC current for different cutoff frequency. In addition, each sub-op amp adopts both Miller and feed-forward phase compensation method to achieve an UGBW of more than 1-GHz with a small DC power consumption. The proposed baseband circuit is implemented in 65-nm CMOS technology, consuming DC power from 6.3 mW to 24.1 mW from a 1.2V supply voltage for each different cut-off frequency.

A Study on the Analysis of Safety Standard and Evaluation of Safety Performance for the 5 Nm3 /hr Class Alkaline Water Electrolysis System (5 Nm3 /hr급 알카라인 수전해 시스템 안전기준 분석 및 안전성능 평가에 관한 연구)

  • Kim, Ji-Hye;Lee, Eun-Kyung;Kim, Min-Woo;Oh, Gun-Woo;Lee, Jung-Woon;Kim, Woo-Seop
    • Journal of the Korean Institute of Gas
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    • v.22 no.6
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    • pp.65-75
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    • 2018
  • The wind energy produced at night is being discarded because of the excess power generated at night compared to daytime. To solve this problem, In this study, we analyzed the evaluation contents for evaluation of domestic and overseas water electrolysis systems and drew contents for safety performance contents test of the water electrolysis system based on the evaluation contents. The test contents produced the efficiency measurement test, the hydrogen generated pressure test, and the hydrogen purity test. And the safety performance evaluation of the alkaline water electrolysis system of $5Nm^3/hr$ was performed based on the results. As a result, the hydrogen generation was calculated as $5.10Nm^3/hr$ and the stack efficiency was $4.97kWh/Nm^3$. The purity of the hydrogen generated was 99.993% and it was confirmed that it produced high purity hydrogen. I think will help us assess and build safety performance of water electrolysis systems in the future.

DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess (2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성)

  • Yoon, Hyung Sup;Min, Byoung-Gue;Chang, Sung-Jae;Jung, Hyun-Wook;Lee, Jong Min;Kim, Seong-Il;Chang, Woo-Jin;Kang, Dong Min;Lim, Jong Won;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.4
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    • pp.282-285
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    • 2019
  • A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

Proton implantation mechanism involved in the fabrication of SOI wafer by ion-cut process (Ion-cut에 의한 SOI웨이퍼 제조에서의 양성자조사기구)

  • 우형주;최한우;김준곤;지영용
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.1-8
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    • 2004
  • The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

Morphology and Biochemcial Characteristics of a Nuclear Polyhedrosis Virus Isolated from the Oriental Tobacco Budworm, Helicoverpa assulta (Guenee) (담배나방 핵다각체병바이러스의 형태 및 생화학적 특성)

  • 진병래;박현우;우수동;김우진;김우진;박범석;강석권
    • Korean journal of applied entomology
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    • v.34 no.3
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    • pp.218-223
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    • 1995
  • A nuclear polyhedrosis virus isolated from the oriental tobacco budworm larvae, Helicoverpa assulta (Guenee) was characterized by electron microscopy, SDS-PAGE, restriction endonuclease analysis and cross infectivity. The shape of a polyhedron was $1.0\mu\textrm{m}$ in average with icosahdral outline, and the virus particle was $65nm\times300nm$ in average with rod-shape. The nuclear polyhedrosis virus was contained a single nucleocapsid within a viral envelope embedded in a polyhedron. The polyhedral protein was composed of a single polypeptide with a M.W. of 31 Kd. The genome size of the virus by restriction endonuclease analysis was about 120 Kb. Among several nuclear polyhedrosis viruses, the nuclear polyhedrosis virus from Helicoverpa assulta (HaNPV) and Autographa california nuclear polyhedrosis virus (AcNPV) were infected the oriental tobacco budworm larvae.

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Property of Composite Silicide from Nickel Cobalt Alloy (니켈 코발트 합금조성에 따른 복합실리사이드의 물성 연구)

  • Kim, Sang-Yeob;Song, Oh-Sung
    • Korean Journal of Materials Research
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    • v.17 no.2
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    • pp.73-80
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    • 2007
  • For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

Design of Optical Filter Structure for DWDM (DWDM을 위한 광필터의 구조)

  • Jeoung, Chan-Gwoun;Ra, Yoo-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.7
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    • pp.1359-1366
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    • 2007
  • The recent, a large capacity of communication is required in order to it is in proportion to capacity of information communication increase and to satisfy a demand because of the demand about Internet, a multimedia service of Video of internet protocol(VoIP), Audio/Video steaming. DWDM(Dense Wavelength Division Multiplexing) technique has been emerged as the method of solving it without additional optical fiber network building and hish-speed equipment. Therefore this thesis proposed the optical filter of fiber/multilayer slab coupled structure combining it to multilayer slab waveguide by polishing the cladding of one side of fiber to design the optical filter having these functions. The optical filter proposed as the simulation result satisfies DWDM filter characteristic; 1) when the separation distance between fiber and slab is $4.15{\mu}m$ at the communication window of $1.5{\mu}m$, the polarization independence is 65nm, 2) when the center wavelengths about TM mode and TE mode are each ${\lambda}_0=1.54946\;{\mu}m$ and ${\lambda}_0=1.6144\;{\mu}m$ and, FWHM(Full at Half Maximun) is 0.1nm.

Development of the Ka-band Frequency Synthesizer and Receiver based on MMIC (MMIC 기반 Ka대역 주파수합성기 및 수신기 개발)

  • Mihui, Seo;Hae-Chang, Jeong;Kyoung-Il, Na;Sosu, Kim
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.1
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    • pp.123-129
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    • 2023
  • In this paper, the frequency synthesis(FS) MMIC and the receive MMICs were developed for a Ka-band compact radar. Also a compact Ka-band frequency synthesizer and a receiver were developed based on those MMICs. The FS MMIC and the wireless-receiver(WR) MMIC to receive the baseband frequency were manufactured by a 65 nm CMOS process and the front-end(FE) MMIC to receive the Ka-band frequency was manufactured by a 150 nm GaN process. Linear frequency modulation waveform and pulse waveform for the transmit signal were measured by output signal of frequency synthesizer. The measured performance of developed receiver including the FE MMICs and the WR MMIC were ≧ 80 dB gain, ≦ 6 dB noise figure and ≧ 10 dBm at OP1dB. The measurement results of the developed frequency synthesizer and the receiver including the manufactured MMICs showed that they could be applied to Ka-band compact radar.

Study on the Deintercalation of $H_2SO_4$--Intercalated Graphite Fiber ($H_2SO_4$-Intercalated Graphite Fiber의 Deintercalation에 관한 연구)

  • 김인기;최상흘;고영신
    • Journal of the Korean Ceramic Society
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    • v.30 no.10
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    • pp.797-802
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    • 1993
  • Graphite fiber intercalated compound was deintercalated at $25^{\circ}C$, 65% of humidity and its deintercalated compound was discussed, based on the X-ray diffraction analysis, electrical resistivity measurement, and UV/VIS spectrometer measurements. During deintercalation, the structure was changed in orderlongrightarrowdisorderlongrightarroworder, and resistivity was decreased in the disorder state of the structure, which reflectance minimum of the UV/VIS spectrum ranged from 660 to 750nm (1.88~1.65eV).

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