• Title/Summary/Keyword: 50keV ion implanter

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Remote Control System of Ion Implanter (이온주입장치의 원격제어시스템 구축)

  • 이재형;양대정
    • Journal of Institute of Control, Robotics and Systems
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    • v.9 no.12
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    • pp.1042-1047
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    • 2003
  • The goal of this research is to implement a PC-based remote control system of ion implanter using Visual Basic programming. Presently, skilled process engineers are required to regularly setup and adjust implanter parameters. Any reduction in the number of production hours devoted to ion beam implanter setup or recalibration after a species change would represent substantial improvements in both manpower and equipment utilization. An optical communication system for the remote control and telemetry in the operation of the 50kev potential was designed and constructed. This system enables continuous and safe operation of the ion implanter and can be the basis for the automation. The isolation characteristics of optical fiber were 10kV/cm, and performance tests of the system under the intense noise environment during the implanter operations showed satisfactory results. This system is designed to completely replace the existing human-machine interface with many new functions. This paper describes the important components of the system including system architecture and software development. It is expected that this system can be used for the communication and control purpose in the high noise environments such as the operation of the MeV energy implanter or other high power, high noise systems.

The design and fabricationt for ion fraction measurement of plasma generator (플라즈마발생기의 이온분율 측정 장치 설계 및 제작)

  • Lee, Chan-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.368-368
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    • 2008
  • Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

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