• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1004-1007
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• 2005

This paper presents a programmable RF BIST (Built-in Self-Test) circuit for low noise amplifiers. We have developed a new on-chip RF BIST circuit that measures RF parameters of low noise amplifier (LNA) using only DC measurements. The BIST circuit contains test amplifier with programmable capacitor banks and RF peak detectors. The test circuit utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance and gain using the mathematical equations. Our on-chip BIST can be self programmed for 1.8GHz, 2.4GHz and 5.25GHz LNA for GSM, Bluetooth and IEEE802.11g standards.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.821-827
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• 2014

Many researches on the usage of shared spectrum have continuously been carried out to solve the recent frequency shortage problem and to use efficiently the spectrum without interference. Also, exponential mobile data growth and the solutions needed to address this challenge are parallel key objectives addressed in many countries. Spectrum policy innovation to meet this challenge is the ASA/LSA (Authorized Shared Access/Licensed Shared Access), which is the best access model to employ the small cell technology to meet this mobile traffic growth. Because 3.5 GHz bands is considered as the ASA/LSA frequency, in this paper, we propose the SAM(Spectrum Access Model) in 3~4 GHz bands to estimate the available ASA/LSA bands and to open more free spectrum. These results are utilized as the data to develop the SAM for the small cell and the open frequency in future.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.5
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• pp.860-867
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• 2009

In this paper, we designed the array antenna for FMCW radar in X - band frequency, and we chose stacked structure for improvement of narrow bandwidth. The array antenna is implemented on the circuit board which is relative permittivity 2.33 and the stacked patchs are designed on the circuit board which is relative permittivity 4.6. A Foam which has a similar permittivity of air is added to keep the particular gap between array antenna and the stacked patch. The result of array antenna has characteristics that a half-power beam width is $10.6^{\circ}$ and antenna gain is 18.70 dBi and bandwidth is 1.25GHz at the design frequency of 9GHz. The result of the array antenna with the stacked structure has that the half power beam width is $15.17^{\circ}$ and the antenna gain is 15.85dBi and bandwidth is 2GHz. It is needed to improve the antenna gain as keeping bandwidth in same level.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.475-485
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• 2010

This paper proposes a novel concept for a microstrip resonator that can function as a filter and as an antenna at the same time. The proposed structure consists of an outer ring, an open loop-type inner ring, a circular patch, and three ports. The frequencies where the proposed structure works as a filter and as an antenna, respectively, are determined primarily by the radius of the inner ring and the circular patch. The measured results show that, when the microstrip resonator operates as a filtering device, this filter has about 15.1 % bandwidth at the center frequency of 0.63 GHz and a minimum insertion loss of 1.5 dB within passband. There are three transmission zeros at 0.52 GHz, 1.14 GHz, and 2.22 GHz. In the upper stopband, cross coupling - taking place at the stub of the outer ring - and the open loop-type inner ring produce one transmission zero each. The circular patch generates the dual-mode property of the filter and another transmission zero, whose location can be easily adjusted by altering the size of the circular patch. The proposed structure works as an antenna at 2.7 GHz, showing a gain of 3.8 dBi. Compared to a conventional patch antenna, the proposed structure has a similar antenna gain. At the resonant frequencies of the filter and the antenna, high isolation(less than -25 dB) between the filter port and the antenna port can be obtained.

• ETRI Journal
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• v.25 no.1
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• pp.19-24
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• 2003

This paper describes the performance of a Ku-band 5-bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5-bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than $7.5{\circ}$ root-mean-square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5-bit phase shifter, the insertion losses were $8.2{\pm}1.4$dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5- bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm ${\times}$1.65 mm. The packaged phase shifter demonstrated a phase error of less than $11.3{\circ}$ RMS, measured insertion losses of 12.2 ${\pm}$2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm${\times}$ 6.20 mm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.5C
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• pp.530-534
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• 2002

In the thesis, For improving the Stability of VCHRO(Voltage Controlled Hair-pin Resonator Oscillator) the new structure using the parallel feedback of the second harmonic is proposed for self-phase locking effect. This module is composed of wilkinson divider, frequency doubler, directional coupler, and bandpass filter using a hair-pin resonator, which are integrated into miniaturized hybrid circuit. The module exhibits output power of 2.5 dBm at 19.5 GHz, -29.83 dBc fundamental frequency suppression and -76.52 dBc/Hz phase noise at 10 kHz offset frequency from carrier of center frequency 19.5 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.938-943
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• 2015

The proposed circular patch antenna was designed to include relative bandwidth of above 25% as designed by the FCC in the FCC in the 3.1 ~ 10.6 GHz band. The antenna was induced to have a wide band characteristic through two structures of the usual microstrip line and a microstrip line with a linear change in impedance. The proposed finally antenna was designed using an FR4_epoxy substrate with 4.7% permittivity, 0.02 of loss tangent, and 1.6 mm of thickness, and was simulated with the use of HFSS made by Ansys. Return loss at frequency, VSWR, radiation pattern and the gain of the antenna were analysed. As a result, if satisfied a return loss of -10 dB and $VSWR{\leq}2$ from 2.28 ~ 13.35 GHz, showing about the bandwidth of 11.89 GHz, and the radiation pattern was unidirectional in all bands. The antenna gain gradually increased from 2 ~ 8 GHz and had the highest gain of 7.92 dBi at 8 GHz. and the gain gradually decreased in the 9 ~ 12 GHz band.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.358-361
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• 2002

The millirneterwave high-T$_{c}$ superconducting(HTS) down-converter sub-system with the HTS/III-V integrated mixer as the central device is demonstrated first. The constituent components of HTS down-converter sub-system such as a single balanced type integrated mixer with rat-race coupler, a cavity type bandpass filter (26 GHz), and a HTS planar lowpass filter(1 GHz), semiconductor LNA and IF-power amplifier, a driving electronic module for A/D converter, and a Stirling type mini-cooler module were combined into an International stand- and rack of 19-inch. From the RF(-61 dBm, 26.5GHz)and LO signal(-1 dBm, 25.6 GHz), IF signal(0dBm, 0.9 GHz) agreed with simulated results is obtained.d.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.91-95
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• 2008

This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.