• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.74-78
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• 2024

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In₅₂Ag_x (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₄₈In₅₂Ag₁ (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In₅₂ (wt%) solder was 119.2℃, and that of the Sn₄₈In₅₂Ag₁ (wt%) solder decreased to 114.0℃.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.351-357
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• 2005

Comparison of shear strength and shear energy of the 48Sn-52In solder bumps reflowed on Cu UBM were made with variations of reflow temperature from $150^{\circ}C$ to $250^{\circ}C$ and reflow time from 1 min to 20 min to establish an evaluation method for the mechanical reliability of solder bumps. Compared to the shear strength, the shear energy of the Sn-52In solder bumps was much more consistent with the solder reaction behavior and the fracture mode at the Sn-52In/Cu interface, indicating that the bump shear energy can be used as an effective tool to evaluate the mechanical integrity of solder/UBM interface.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.87-93
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• 2005

Interfacial reactions between 48Sn-52In solder and $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au under bump metallurgies(UBM) with various Au thickness of $0.1{\~}0.7{\mu}m$ have been investigated after solder reflow at $150^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ for 1 minute. Ball shear strength and shear energy of the Sn-52In solder bump on each UBM was also evaluated. With reflowing at $150^{\circ}C$ and $200^{\circ}C$, $Cu_6(Sn,In)_5$ and $AuIn_2$ intermetallic compounds were formed at UBW solder interface. However, UBM was consumed almost completely with reflowing at $250^{\circ}C$. While ball shear strength was not consistent with UBM/solder reactions, ball shear energy matched well with UBM/solder reactions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.186-190
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• 2023

We studied the various characteristics of Sn-In (wt%) Pb-free solders for photovoltaic ribbon application. The solders near the eutectic composition of Sn₄₈In₅₂ (wt%) existed in InSn₄ and In₃Sn alloy phases, and in In crystal phase, but not in Sn crystal phase. In addition, the InSn₄ phase (γ-alloy) existed separately from the In₃Sn (β-alloy) and the In phase confirmed by an SEM-EDS-mapping. The melting temperature of the eutectic solder of Sn₄₈In₅₂ (wt%) was 119.2℃, and when the Sn content decreased in reference to the eutectic composition, it slightly increased to 121.4℃, but when the Sn content increased, it remained almost constant at 119.1℃. The peel strength of the ribbon plated with the Sn₄₂In₅₈ (wt%) solder was 38.7 N/mm², and it tended to increase when the Sn content increased. The peel strength of the eutectic Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₅₁In₄₉ (wt%) solder was 61.6 N/mm² that was the highest.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.39-43
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• 2002

The eutectic solder Sn-37Pb and the lead free solder alloys with the compositions of Sn-0.7Cu, Sn-3.5Ag, Sn-3.5Ag-0.75Cu, Sn-2.0Ag-0.7Cu-3.0Bi were applied to the 48 BGA packages, and then it was discussed for the shear strength at the solder joints as the hardness and the composition of the small solder ball. As a result of experiments, the high degree of hardness with the displacement of 0.043 mm was obtained in Sn-2.0Ag-0.7Cu-3.0Bi. The shear strength of the lead free solder was higher than that of Sn-37Pb solder, and it can be obtained the maximum value of about 52% in Sn-2.0Ag-0.7Cu-3.0Bi.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.99-102
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• 2003

Reactions between 48Sn-52In solder and under bump metallurgies(UBM) such as 100nm $Ti/8{\mu}m$ Cu and 300nm Al/400nm Ni(V)/400nm Cu have been investigated, and the shear strength of 48Sn-52In solder bumps on each UBM has been evaluated. While intermetallic compounds with two different morphologies were continuously thickened on Ti/Cu with repeating the reflow process, the intermetallics on Al/Ni(V)/Cu spalled into the solder with increasing the number of reflow times. The solder bumps on Ti/Cu exhibited higher shear strength than those on Al/Ni(V)/Cu.

• Proceedings of the KWS Conference
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• 1995.10a
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• pp.110-112
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• 1995

Initial solder joint strengths of various solder pastes, such as Sn-Pb(63-37wt%), Sn-In(52-48wt%), Sn-In-Ag(77.5-20-2.5wt%), and Sn-Ag(96.5-3.5wt%) has been studied. A system that can control the solder joint interface temperature during bonding process was also desined and implemented to improve solder joint integrity.

• Journal of Welding and Joining
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• v.15 no.2
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• pp.36-42
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• 1997

In this paper, stability of initial strength at solder joint with lead free solders, such as Sn-In (52-48%) and Sn-Ag (96.5-3.5wt%) was studied. To obtain at solder joint with high quality, it is very important to control the temperature at the interface of solder joints. It is found that the thermal EMF (electro motive force) occurs betwee lead frame and copper pad on a substrate during reflow soldering process using heated tip. As a result of control the temperature at interface of solder joints, variation of initial strength at solder joint decreases from about $\pm40%$ to $\pm20%$, and it is realized Pb free soldering process using Sn/In and Sn-Ag solder paste.

• Journal of Welding and Joining
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• v.16 no.5
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• pp.100-107
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• 1998

This paper describes fluxless soldering of reflow soldering process using solder foil instead of solder pastes. There is an increasing demand for the reliable solder connection in the recent high density microelectronic components technologies. And also, it is problem fracture of an Ozone layer due to freon as which is used to removal of remained flux on the substrate. This paper discussed joining phenomena, boudability and joining processes of microelectronics devices, such as between outer lead of VLSI package and copper pad on a substrate without flux. The shear strength of joints is 8 to 13 N using Sn/Pb (63/37 wt.%) solder foil with optimum joining conditions, meanwhile, in case of using Sn/In (52/48 wt.%) solder foil, it is possible to bond with low heating temperature of 550 K, and accomplish to high bonding strength of 25N in condition heating temperature of 650K. Finally, this paper experimentally shows fluxless soldering using solder foil, and accomplishes key technology of microsoldering processes.

• Food Science and Preservation
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• v.17 no.3
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• pp.376-383
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• 2010

Including crude fat content, triacylglycerol species, tocopherols and phytosterols were analyzed in 8 kinds of nuts (sunflower seed, cashew nut, walnut, pistachio, pumpkin seed, ginkgo, hazel nut and pecan). The extracted crude fats showed 0.63~39.60 wt%, among which hazel nut showed the highest amount of fat content. Oleic acid (C18:1) was major fatty acids at sn-2 position in cashew nut, pistachio, hazel nut, and pecan while sunflower seed, walnut, and pumpkin seed showed linoleic acid (C18:2) as a major fatty acids at sn-2 position. Especially, ginkgo contained 10.72 wt% of vaccenic acid (C18:1-n7) at sn-2 position. The TAG species of 8 kinds of nuts were analyzed by reverse-phase HPLC, from which PN value ranged 40~52. Among the analyzed nuts, higher content of tocopherols were observed in ginkgo (48.57 mg/100 g), sunflower seed (38.35 mg/100 g), and pumpkin seed(31.43 mg/100 g). Total phytosterols were observed with the range of 88.60~947.20 mg/100 g.