• 비파괴검사학회지
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• 제21권5호
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• pp.532-541
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• 2001

재료의 노화에 의한 강도 및 인성 감소치를 정량적으로 평가하는 비파괴적 기법의 개발이 시도되고 있으며 전기비저항법도 그 중의 하나이다. 본 연구에서는 전기비저항법의 열화도 평가에의 적용성을 살펴보기 위해 먼저 6종 10 가지의 비자성 금속을 측정시료로 선택하여 직류 two-point probe법(혹은 2탐침법)으로 전기비저항을 계산한 결과와 비접촉식 와전류 방법으로 전기비저항을 측정한 결과를 서로 비교하였다. 또한, 1Cr-1Mo-0.25V강에 대하여 비파괴적 측정 방법인 four-point probe 방법(혹은 4탐침법)을 사용하여 얻은 결과와 기존의 2탐침법을 사용하여 얻은 결과를 서로 비교하여 현장에서의 4탐침 기술의 적용 가능성을 살펴보았다. 1Cr-1Mo-0.25V강에 대하여 2탐침법으로 구한 비저항 값과 4탐침법으로 구한 비저항 측정값의 차이는 0.6%였다. 따라서 4탐침법을 사용하여 현장에서 금속소재의 열화도의 비파괴적 평가가 가능하다고 사료된다.

• 전기학회논문지P
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• 제59권4호
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• pp.423-427
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• 2010

Portable sheet resistance-measuring instrument using the dual-configuration Four-Point Probe method is developed for the purpose of precisely measuring the sheet resistance of conducting thin films. While single-configuration Four-Point Probe method has disadvantages of applying sample size, shape and thickness corrections for a probe spacing, the developed instrument has advantages of no such corrections, little edge effects and measuring simply and accurately the sheet resistance between $0.2\Omega/sq$ and $2k\Omega/sq$.

• 대한기계학회논문집A
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• 제24권4호
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• pp.874-880
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• 2000

In this paper, a DC potential drop measurement system was used to find the position of the flaw on a simple thin plate. Four-point probe test was evaluated and used for this study. In the four-point probe test, the more distance between current pins provides the more measurable scope, the less voltage difference, and the more voltage difference rate. In the other hand, the more distance between voltage pins provides the less voltage difference and the less voltage difference rate. An optimized four-point probe was applied to measure the relation between voltage and the relative position of flaw to the probe. The Maxwell 21) simulator was used to analyze the electromagnetic field, and it showed that the analytical result was similar to the experimental result within 11.4% maximum error.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.153-154
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• 2013

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1388-1389
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• 2006

금속의 전기비저항 측정은 4단자 방법, van der Pauw 방법, Four Point Probe(FPP) 방법 등이 있으며, 이들의 정확한 측정방법을 고찰하고, 그 중 FPP 방법에 의한 비저항의 두께효과를 비교 분석하기 위하여 비자성 금속 SUS 316을 두께별로 가공한 후 실험하였다. 그 결과 4단자 및 van der Pauw 방법으로 측정된 도전율은 각각 2.273 %IACS으로 나타났으며, FPP방법으로 측정된 도전율은 probe spacing 5.0 mm, dc current 10 A에서 시료의 두께가 2 mm일 때 2.288 %IACS, 3 mm일 때 2.271 %IACS로서 상기 두 방법으로 측정한 결과와 0.5 %이내에서 일치하였으나, 시료가 5mm 및 11 mm 에서는 매우 큰 오차를 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.267-269
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• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.

• 한국정밀공학회지
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• 제12권4호
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• pp.119-126
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• 1995

This paper presents a non-contact measuring system using one point measuring method to measure surface profiles of dies and clay models for practical use in the field of production engineering. The system has a laser beam probe similar to a measuring probe in a contact measuring system and CCD linear sensor used to detect 300mm measurement range, displacement of measured surfaces, from an origin. There is no mechanical interference between this measuring system and a measured surface in this system. In this measuring system, it was needed 500-600ms including data processing time to measure one point. The experiments showed that the standard deviation was 800 .mu.m and the reproducibility was also 100-210 .mu. m.

• 한국안전학회지
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• 제30권4호
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• pp.46-50
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• 2015

This paper describes the measurement and analysis of ground impedance according to arrangement of auxiliary probe around ground grid using the fall-of-potential method and the testing techniques to minimize the measuring errors are proposed. The fall-of-potential method involves passing a current between a ground electrode and a current probe, and then measuring the voltage between a ground electrode and a potential probe. To minimize interelectrode influences due to mutual resistances, the current probe is a generally placed at a substantial distance from the ground electrode under test. In order to analyze the effects of ground impedance due to the arrangement of auxiliary probe and frequency, ground impedances were measured in case that the arrangements of auxiliary probe were straight line, perpendicular line, and horizontal line. The distance of current probe was located from 10[m] to 200[m] and the measuring frequency was ranged from 55[Hz] to 513[Hz]. As a consequence, the ground impedance increases with increasing the distance from the ground electrode to the point to be tested, but the ground impedance decreases with increasing the frequency.

• 설비공학논문집
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• 제7권4호
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• pp.600-610
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• 1995

When combustion gas is cooled down below the dew point of sulfuric acid vapor in the heat recovery systems, condensation occurs. Since the condensed sulfuric acid solution causes low-temperature corrosion in materials, it is important to measure the SOx dew point by electric measurement. In this study, two kinds of probes having electric gaps of 1mm or 2mm were used. and experiments were carried out by the parameters of sulfuric acid vapor and water vapor concentration. The changes of electric current caused by sulfuric acid condensed on the surface of probe according to the cooling rate and the probe head surface temperature were sudied. The opimum cooling rate was decreased with the increasing of water vaper concentration regardless of sulfuric acid concentration. The sensitivity of electric current is improved for the narrower gap(1mm) of ring electrodes, but it rarely affects the SOx dew point measuring of different probes according to the change of cooling rate.

• 센서학회지
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• 제30권4호
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• pp.236-242
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• 2021

In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.