• Title/Summary/Keyword: 3Y-$ZrO_2$

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Fabrication of Sol-Gel derived Antireflective Thin Films of $SiO_2-ZrO_2$ System (솔-젤법에 의한 $SiO_2-ZrO_2$계 무반사 박막의 제조)

  • Kim, Byong-Ho;Hong, Kwon;Namkung, Jang
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.617-625
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    • 1995
  • In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

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Synthesis of Spherical ZrO2 Powders by Thermal Hydrolysis and Hydrothermal Crystallization (열가수분해 및 수열결정화에 의한 구형 ZrO2 분말의 합성)

  • Cho, Churl-Hee;Jin, Ming-Ji;Choi, Jae-Young;Kim, Do-Kyung
    • Journal of the Korean Ceramic Society
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    • v.39 no.4
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    • pp.420-426
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    • 2002
  • $ZrO_2$, $Y_2O_3$-doped $ZrO_2$ and CaO-doped $ZrO_2$ powders were prepared by hydrothermal crystallizing spherical $ZrO_2$ gel which had been synthesized by thermal hydrolysis reaction. After the hydrothermal crystallization process, the formed crystallized powders sustained its original spherical shape and had the mean particle size of $0.4{\mu}m$. The particles were composed of about 10nm sized primary particles. The agglomeration strength between the primary particles appears very weak considering that the spherical particles were broken into the primary particles during the pressing process. The particle shape, size, phase fraction and dopant content were analyzed and crystallization mechanism of spherical gel was discussed.

Effect of $ M_2O_3$ on the Sinterbility and Electrical Conductivity of $ZrO_2(Y_2O_3)$ System(II) : Ceramics of the $ZrO_2(Y_2O_3)$-$Sb_2O_3)$ System ($ZrO_2(Y_2O_3)$계 세라믹스의 소결성과 전기전도도에 대한 $ M_2O_3$의 영향 (II): $ZrO_2-Y_2O_3-Sb_2O_3$계 세라믹스)

  • 오영재;정형진;이희수
    • Journal of the Korean Ceramic Society
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    • v.23 no.6
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    • pp.37-44
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    • 1986
  • Yttria-antimonia-stabilized zirconia was investigated with respect to the amount of $Sb_2O_3$ addition in the range of 0.5~5mole% to the base composition of $(ZrO)_{0.92}(Y_2O_3)_{0.08}$ The sinterbility modulus of rupture Vickers hardness evaporation of components phase form-tion and mcicrostructure were evaluated with antimonia content. Also two probe A. C conductivity measurement was subjected to all specimens and the best results are achieved with 1mol% $Sb_2O_3$ as a sinter agent and relative density of~98% obtained at 140$0^{\circ}C$ and this composition has a maximum electrical conductivity due to the possible substition of $Sb^{3+}$ for $Zr^{4+}$ site. The effect of $Sb_2O_3$ on the electrical conductivity of th bulk and the grain boundaries has on investigated using frequency dispersion analysis (5~106 Hz) Antimonia addition has a negative in-fluence on both the bulk and the grain boundary conductivity except for a 1 mon% addition. The additive antimonia has improve a modulus of rupture to 60~MPa due to metastable-tetragonal phase apparence and decrease the hardness with increasing the $Sb_2O_3$ content.

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Effect of In Situ YAG on Microstructure and Properties of the Pressureless-Sintered $SiC-ZrB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 $SiC-ZrB_2$ 전도성(電導性) 복합체(複合體)의 미세구조(微細構造)와 특성(特性)에 미치는 In Situ YAG의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.505-513
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    • 2006
  • The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

Carbon Dioxide Sorption Properties and Sintering Behavior of Lithium Zirconate Prepared by Solid-State Reaction (고상반응에 의하여 제조된 Li2ZrO3의 이산화탄소 흡수 및 소결 특성)

  • Woo, Sang-Kuk;Lee, Shi-Woo;Yu, Ji-Haeng
    • Journal of the Korean Ceramic Society
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    • v.43 no.5 s.288
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    • pp.309-314
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    • 2006
  • We synthesized lithium zirconate using solid-state reaction and analyzed thermal properties (TG/DTA) of starting materials and the synthesized one. When $Li_2ZrO_3$ powder was exposed to $CO_2$ environment at $500^{\circ}C$, 93% of the theoretical absorption weight was gained within 280 min with fairly high sorption rate. Almost all the absorbed $CO_2$ was generated by heating the sample to $800^{\circ}C$. We also investigated densification behavior of $Li_2ZrO_3$ under $CO_2$ environment. By sintering $Li_2ZrO_3$ at $760^{\circ}C$ using 2-step process, we obtained dense product, composed mainly of $Li_2ZrO_3\;and\;ZrO_2$, with relative density of 92%.

Investigation of High Temperature Electrical Conductivity of CaO-partially Stabilized $ZrO_2$ (CaO에 의하여 부분 안정화된 $ZrO_2$의 고온 전기 전도도에 대한 연구)

  • 변수일
    • Journal of the Korean Ceramic Society
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    • v.16 no.4
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    • pp.213-224
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    • 1979
  • The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

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Effects of Alkaline Additives on CO2 Removal by Li2ZrO3 (Li2ZrO3로 CO2 제거시 알칼리 첨가제 효과)

  • Park, Joo-Won;Kang, Dong-Hwan;Jo, Young-Do;Yoo, Kyung-Seun;Lee, Jae-Goo;Kim, Jae-Ho;Han, Choon
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.535-539
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    • 2006
  • Effects of alkaline additives on the $CO_2$ removal reaction have been investigated by a thermogravimetric analyzer. $Li_2ZrO_3$ was synthesized by soild reaction of $ZrO_2$ with $Li_2CO_3$ and then alkali chemicals were added to the synthesized $Li_2ZrO_3$ and then heat treatment was carried out. Addition of alkali chemicals enhanced the reactivity of $Li_2ZrO_3$ with the following order; $K_2CO_3>NaCl>LiCl>Na_2CO_3$, which were resulted from the formation of partially melted $Li_2CO_3$. SEM photographs showed the presence of melted state and the XRD results showed that the chemical states of added salts were not changed. Addition of NaCl caused the induction time of about 60 min at the initial reaction stage and the addition of $Na_2CO_3$ inhibited the decomposition of $Li_2CO_3$ at about $700{\sim}750^{\circ}C$.

Effect of In Situ YAG on Properties of the Pressureless-Sintered SiC-$ZrB_2$ Electroconductive (상압소결(常壓燒結)한 SiC-$ZrB_2$ 도전성(導電性) 복합체(複合體)의 특성(特性)에 미치는 In Situ YAG의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young;Ko, Tae-Hun;Lee, Jung-Hoon
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1230-1231
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    • 2008
  • The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

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Interfacial properties of ZrO$_2$ on silicon

  • Lin, Y.S.;Puthenkovilakam, R.;Chang, J.P.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.65.1-65
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    • 2003
  • The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

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Effect of In Situ YAG on Properties of the Pressureless-Sintered SiC-$ZrB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 SiC-$ZrB_2$ 전도성(電導性) 복합체(複合體)의 특성(特性)에 미치는 In Situ YAG의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young;Ko, Tae-Hun;Lee, Jung-Hoon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.11
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    • pp.2015-2022
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    • 2008
  • The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.