• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.51-56
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• 2002

Permalloy thin films fabricated by rf magnetron sputtering showed the excellent magnetic properties, i.e., an effective permeability of over 2000 at 1$\mu\textrm{m}$ thick up to 10 MHz, a saturation magnetization of 10∼12 kG, a coercive force of 0.2∼1 Oe, resistivity (p) is 20 ${\mu}$$\Omega$cm. In order to control the magnetic anisotropy direction of the films in a wafer scale, two parallel Nd-Fe-B permenant mangnets were used to provide the magnetic field during the sputtering process. As a result, the anisotropy direction was successfully controlled when the two magnets were seperated with a distance of 70 mm. 3D simmulation of the magnteic fields around the wafer during sputtering were in accord with the above result.