• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1546-1549
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• 2005

Al-doped ZnO (ZnO:Al) thin films were grown on corning 1737 glass substrates by dc magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}$ $cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.85-89
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• 1997

A microstructure of realistic ZnO varistor was constructed by Voronoi network and studied cia computer simulation. The grain size and standard deviation was calculated with new method and have good agreement with experimental data. In this network, the grain boundary conditions of three different type are randomly distributed. The three electrical boundary conditions . (1) type A junctions (high nonlinearity); (2) type B junctions (low nonlinearity); (3) type C junctions (linear with low-resistivity) are fitted from the experimental measurement. The electrical properties were studied by varying the boundary type concentration and the disorder parameter d. The shape of I-V characteristic curve of the network is affected by the type concentration and the disorder parameter has an effect on the double inflected region.

• 한국세라믹학회지
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• 제42권7호
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• pp.475-482
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• 2005

Zn$_{l-x}$Co$_{x}$O (x = 0.05 - 0.20) films were grown on Coming 7059 glass by sol-gel process. A homogeneous and stable Zn$_{l-x}$Co$_{x}$O sol was prepared by dissolving zinc acetate dihydrate (Zn(CH$_{3}$COO)$_{2}$$\cdot$2H$_{2}$O), cobalt acetate tetrahydrate ((CH$_{3}$)$_{2}$$\cdot$CHOH) and aluminium chloride hexahydrate (AlCl$_{3}$ $\cdot$ 6H$_{2}$O) as solute in solution of isopropanol ((CH$_{3}$)$_{2}$$\cdot$CHOH) and monoethanolamine (MEA:H$_{2}$NCH$_{2}$CH$_{2}$OH). The films grown by spin coating method were postheated in air at 650°C for 1 h and annealed in the condition of vacuum (5 $\times$ 10$^{-6}$ Torr) at 300$^{\circ}C$ for 30 min and investigated the nature of c-axis preferred orientation and physical properties with different Co concentrations. Znl_xCOxO thin films with different Co concentrations were well oriented along the c-axis, but especially a highly c-axis oriented Zn$_{l-x}$Co$_{x}$O thin film was grown at 10 at$\%$ Co concentration. The transmittance spectra showed that Zn$_{l-x}$Co$_{x}$O thin films occur typical d-d transitions and sp-d exchange interaction became activated with increasing Co concentration. The electrical resistivity of the films at 10 at$\%$ Co had the lowest value due to the highest c-axis orientation. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetic properties appeared, respectively. The characteristics of the electrical resistivity and room temperature ferromagnetism of Zn$_{l-x}$Co$_{x}$O thin films suggested the possibility for the application to dilute magnetic semiconductors.

• 한국초전도ㆍ저온공학회논문지
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• 제8권3호
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• pp.18-22
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• 2006

We obtained in-situ $MgB_2$ thin films in an one-step process using ESSD (Evaporation Sputtering Simultaneous Deposition) method. In our approach. the Ma evaporator is designed specially Mg and B are simultaneously evaporated and sputtered, respectively, in the specially designed ESSD chamber. The background pressure was less than $1{\times}10^{-6}$ Torr. The substrate temperature was kept at 623 K. The film properties were investigated by both electrical resistivity and PPMS. As a result, typical $T_c$ of films was 11 K.

• 지구물리와물리탐사
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• 제7권2호
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• pp.148-154
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• 2004

자기지전류(MT)법의 3차원 모델링에 대해 소개한다. 3차원 MT 모델링은 MT 반응의 물리적 특성의 이해뿐만 아니라 지하의 3차원적 전기비저항 구조를 재구성하기 위한 역산법의 개발에도 필수적이다. 지난 20년 동안 3차원 모델링에 관한 여러 수치기법들이 개발되었으나 그 실용성에는 많은 한계가 있었다. 그러나 최근에는 컴퓨터의 급속한 발전과 대형 연립방정식에 대한 반복해법의 발전에 힘입어 이전에는 어려웠던 복잡한 3차원 구조에 대한 MT 반응을 효율적으로 모델링할 수 있게 되었다. 유한차분법에서는 자기 flux와 전류의 보존법칙을 만족하면서 전기장의 불연속을 표현할 수 있는 staggered 격자의 사용이 보편화되었다. 대형 연립방정식에 대한 수치해의 수렴성은 Krylov 부분공간법, 적당한 전처리 기술 및 정적 발산보정법을 채택함으로써 크게 향상된다. 변요소를 사용하는 벡터 유한요소법으로도 전기장의 불연속 문제를 해결할 수 있으며 이 방법이 가진 기하학적 유연성은 불규칙한 지표기복을 포함한 복잡한 구조를 모델화할 때 특히 유용하다.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• 대한지하수환경학회지
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• 제3권2호
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• pp.95-100
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• 1996

난지도 매립장의 매립물 특성과 지하구조를 파악하기 위해서 난지도 매립장 상부에서 슐럼버져 전기비저항 탐사와 동일송수신기 배열 시간영역 전자탐사를 실시하였다. 또한 6개의 측점에서는 두가지 탐사를 함께 실시하여 지하구조 해석 결과의 신뢰도를 높이고자 하였다. 전기탐사와 시간영역 전자탐사로부터 구한 지하구조 모델은 서로 상당히 일치하는 양상을 보인다. 매립장의 전기비저항 구조는 천부에 높은 전기 비저항을 보이는 표층 아래에 낮은 비저항층이 존재하며, 저비저항층 하부에 다시 고비저항층이 존재하는 양상을 보인다. 중간층의 저비저항은 매립물의 분해와 강수의 유입에 의해 생성된 것으로 보이며, 하부의 고비저항층은 난지도 지역의 기반암을 나타내는 것으로 보인다. 이상의 결과는 매립장 및 주변지역에서 실시된 슐럼버져 전기탐사 및 쌍극자배열 전기탐사의 결과와도 잘 대비된다. 매립장의 저비저항층이 기반암이 존재하는 것으로 생각되는 깊이까지 발달하고 있고, 난지도 지역에 오염물질의 수직이동을 막을 수 있는 불투수성 지층이 존재하지 않는 점을 고려할 때, 매립장에서 생성된 오염물질은 난지도 매립장 지하의 지하수로 바로 유입되는 것으로 보인다.

• Journal of Magnetics
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• 제5권4호
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• pp.120-123
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• 2000

Co-Ni-Fe-N thin films were fabricated by a $N_2$ reactive rf magnetron sputtering method. The nitrogen partial pressure ($P_{N2}$) was varied in the range 0~10% . As$P_{N2}$ increases in this range, the saturation magnetization $B_s$ linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increases from 27 to 155 $\mu\Omegacm$. The coercivity $H_c$ exhibits the minimum value at 4% $P_{N2}$. The magnetic anisotropy fields ($H_k$) are in the range of 20$\sim$50 Oe. High frequency characteristics of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films are excellent in the range of 3$\sim$5% of $P_{N2}$. In particular, the effective permeability of the film fabricated at 4% $P_{N2}$ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, $H_c$/ of 1.4 Oe, resistivity of 98$\mu\Omegacm$ and $H_k$ of about 25 Oe. Also, the corrosion resistance of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films was imp roved with increasing N concentration.