• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2373-2377
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• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.