• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.311-315
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on AlN(0.1 $\mu$m)/3C-SiC(1.0 $\mu$m) suspended membranes by surface micro-machining technology. The 3C-SiC and AlN thin films which have wide energy band gap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3CSiC RTD(resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR(thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 ppm/$^{\circ}C$ within a temperature range from 25 $^{\circ}C$ to 50 $^{\circ}C$ and -1040 ppm/$^{\circ}C$ at 500 $^{\circ}C$. The micro heater generates the heat about 500 $^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than Pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Membrane Journal
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• v.28 no.4
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• pp.221-232
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• 2018

The silica containing carbon ($C-SiO_2$) membranes were fabricated using poly(imide siloxane)(Si-PI) and polyvinylpyrrolidone (PVP) blended polymer. The characteristics of porous carbon structures prepared by the pyrolysis of polymer blends were related with the micro-phase separation behaviors of the two polymers. The glass transition temperatures ($T_g$) of the mixed polymer blends of Si-PI and PVP were observed with a single $T_g$ using differential scanning calorimetry. Furthermore, the nitrogen adsorption isotherms of the $C-SiO_2$ membranes were investigated to define the characteristics of porous carbon structures. The $C-SiO_2$ membranes derived from Si-PI/PVP showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures. For the molecular sieving probe, the $C-SiO_2$ membranes were prepared with the ratio of Si-PI/PVP and the pyrolysis conditions, such as the pyrolysis temperature and the isothermal times. Consequently, the $C-SiO_2$ membranes prepared by the pyrolysis of Si-PI/PVP at $550^{\circ}C$ with the isothermal time of 120 min showed the $O_2$ permeability of 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$) and $O_2/N_2$ selectivity of 14.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.37-41
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• 2002

In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to $Si_xN_y$ and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane, $Si_xN_y$ thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on $Si_xN_y$, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.

• Journal of Sensor Science and Technology
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• v.19 no.1
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• pp.31-35
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• 2010

High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.387-388
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• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• Membrane and Water Treatment
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• v.10 no.5
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• pp.353-360
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• 2019

ZSM-5 membrane was prepared on tubular macroporous ${\alpha}$-alumina support using a different synthesis route. The effects of organic template agent and Si/Al ratio of the synthesis gel on morphology, structure, and separation performance of the ZSM-5 membrane used for dehydration of isopropanol were investigated. High water perm-selectivity ZSM-5 membrane with a thickness of about $3.0{\mu}m$ and a low Si/Al ratio of 10.1 was successfully prepared from organotemplate-free synthesis gel with a molar composition of $SiO_2$ : $0.050Al_2O_3$ : $0.21Na_2O$ : NaF : $51.6H_2O$ at $175^{\circ}C$ for 24 h. The ZSM-5 membrane exhibited high pervaporation performance with a flux of $3.92kg/(m^2{\cdot}h)$ and corresponding separation factor of higher than 10,000 for dehydration of 90 wt.% isopropanol/water mixture at $75^{\circ}C$.

• Membrane Journal
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• v.20 no.3
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• pp.210-216
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• 2010

The hydrogen permselective membrane were prepared by chemical vapor deposition (CVD) aiming at the applications to hydrogen iodide decomposition in the thermochemical IS process, and it was evaluated for the possibility as a separation membrane. An electron probe X-ray microanalyzer (EPMA) and SEM picture were used to analyze the morphology and structure of the prepared membranes. It was confirmed that Zr-Si-O layer exist in the surface of the prepared membrane using zirconia coated support. Single-component permeance to $H_2$ and $N_2$ were measured at $300{\sim}600^{\circ}C$. Hydrogen permeance through the Z-1 membrane at a permeation temperature of $600^{\circ}C$ was about $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$. The selectivities of $H_2/N_2$ at $600^{\circ}C$ were 5.0 and 5.75 for Z-1 and Z-2 membrane, respectively.

• ETRI Journal
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• v.34 no.2
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• pp.226-234
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• 2012

The novelty of this study resides in the fabrication of stoichiometric and stress-reduced $Si_3N_4/SiO_2/Si_3N_4$ triple-layer membrane sieves. The membrane sieves were designed to be very flat and thin, mechanically stress-reduced, and stable in their electrical and chemical properties. All insulating materials are deposited stoichiometrically by a low-pressure chemical vapor deposition system. The membranes with a thickness of 0.4 ${\mu}m$ have pores with a diameter of about 1 ${\mu}m$. The device is fabricated on a 6" silicon wafer with the semiconductor processes. We utilized the membrane sieves for plasma separations from human whole blood. To enhance the separation ability of blood plasma, an agarose gel matrix was attached to the membrane sieves. We could separate about 1 ${\mu}L$ of blood plasma from 5 ${\mu}L$ of human whole blood. Our device can be used in the cell-based biosensors or analysis systems in analytical chemistry.

• Proceedings of the Membrane Society of Korea Conference
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• 1993.04a
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• pp.35-35
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• 1993

튜브형 $\alpha-Al_2O_3$ 담체에 졸-겔 침지코팅법과 가압코팅(pressurized coating) 법으로 boehmite 졸과 극미세 입자 SiO$_2$ 및 TiO$_2$ 졸을 코팅한 후 200$\circ$C~500$\circ$C 에서 열처리하여 복합분리막을 제조하였다.