• 한국재료학회지
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• 제20권9호
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• pp.451-456
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• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• 센서학회지
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• 제21권4호
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.214-215
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• 2009

This paper presents the fabrication and characteristics of microheaters, built on AlN(0.1 um)/3C-SiC(1 um) suspended membranes. Pt was used as microheater and temperature sensor materials. The results of simulated are shown that AlN/3C-SiC membrane has more large uniform-temperature area than $SiO_2$/3C-SiC membrane. Resistance of temperature sensor and power consumption of microheater were measured and calculated. Pt microheater generates the heat of about $550^{\circ}C$ at 340 mW and TCR of Pt temperature sensor is about 3188 ppm/$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• 멤브레인
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• 제14권4호
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• pp.312-319
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• 2004

졸겔법에 의해 Si(OC$_2$$H_5$/)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$계로부터 다공성의 SiO$_2$-B$_2$O$_3$ 막을 제조하였다. SiO$_2$-B$_2$O$_3$막의 특성을 BET, IR spectrophotometer, X-ray diffractometer, SEM 과 TEM을 사용하여 조사하였다. $700^{\circ}C$에서 얻어진 SiO$_2$-B$_2$O$_3$ 막의 평균 기공직경은 0.0048 $\mu\textrm{m}$이고, 표면적은 354.398 $m^2$/g이었으며, 입자의 크기는 7 nm인 무정형의 다공체이었다. SiO$_2$-B$_2$O$_3$ 막의 수소/질소 혼합 기체 분리 특성은 기체분리 압력을 달리하여 조사하였다. $25^{\circ}C$, ΔP 155.15cmHg에서 수소/질소 혼합 기체를 분리하여 본 결과 SiO$_2$-B$_2$O$_3$ 막의 수소에 대한 real separation factor($\alpha$)는 4.68이었다. 그리고 투과셀의 압력차(ΔP)값이 증가할수록 real separation factor($\alpha$), head separation factor($\beta$), tail separation factor((equation omitted))값이 증가하였다.

• 센서학회지
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• 제18권5호
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• pp.349-352
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• 2009

This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

• 한국세라믹학회지
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• 제52권4호
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• pp.234-236
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• 2015

$Y_2O_3$-SiC composite membrane was dip-coated using $Y_2O_3$ sol solution; this membrane was compared with a non- coated one. Each membrane was characterized by XRD, FE-SEM and BET techniques. Hydrogen and CO permeation were tested with self-manufactured Sievert's type equipment. $Y_2O_3$ coating was enhanced for the selectivity of the membrane ($H_2$ versus CO). The hydrogen permeation was measured at 1 bar with increasing temperatures. In case of the coated membrane, hydrogen permeation was found to be $1.24{\times}10^{-7}mol/m^2sPa$ with perm-selectivity of 4.26 at 323 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.252-252
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• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.385-386
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• 2008

This paper reports the design of the ultra low power consumption microhotplates for high temperatures. The microhotplates consisting of a platinum-based heating element on AlN/poly 3C-SiC layers were designed. The microhotplate is a $600\times600{\mu}m^2$ square shaped membrane made of $1{\mu}m$ thick ploy 3C-SiC suspended by four legs. The microhotplate was compared with $Si_3N_4/SiO_2/Si_3N_4$(NON) structure microhotplate by COMSOL simulation system. Thermal uniformity, power consumption and thermal characterizations of microhotplates based on 3C-SiC thin film are better than microhotplates with NON structure.

• 멤브레인
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• 제10권2호
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• pp.55-65
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• 2000

다공성 실리카 막을 졸겔법에 의해서 Si(${OC}_2H_5)_4-H_2O$ 로부터 제조하고, 막의 특성을 TG-DTA, XRD, IR, BET, SEN, TEM을 사용하여 조사하였다. 다공성 실리카 막 제조를 위한 Si(${OC}_2H_5)_4$ : $H_2O4$ : $H_2O$ : $C_2H_5{OH}$의 최적 몰비는 1 : 4.5 : 4 이었다. 100$^{\circ}C$~1100$^{\circ}C$~에서 열처리된 막의 비표면적은 3.8 $m^2$/g~902.3$m^2$/g 이었으며, 기공크기는 20$\AA$~50$\AA$이었다. 300$^{\circ}C$~~700$^{\circ}C$~범위에서 열처리된 막의 입자크기는 15nm~30nm이며, 열처리 온도가 증가하면 입자의 크기도 증가하였다. 이렇게 제조한 다공성 실리카 막으로 $H_2$/$N_2$ 혼합기체를 분리하는데 응용하였으며, 다공성 실리카 막에 의한 $H_2$/$N_2$혼합기체분리는 Knudsen flow와 surface flow에 의해서 일어나며 주로 surface flow에 의존하였다. 다공성 실리카 막의 $H_2$/$N_2$ 혼합기체에 대한 real separation factor($\alpha$)는 155.15 cmHg($\Delta$P)와 $25^{\circ}C$에서 5.17이었으며, real separation factor($\alpha$), head separation factor ($\beta$), tail separation factor$\bar{B}$)는 압력이 증가하면 증가하였다.