• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.312-320
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• 1994

Effect of the laser shot number on the particulates density of the pulsed laser deposited YBa2Cu3O7-x thin films and the laser irradiated surface morphology of the YBa2Cu3O7-x bulk target have been investigated. Until 100 laser shots of cumulative irradiation, the films has the particulates density of ~103 mm-2. However, after 100 laser shots, the density was increased more than 10 times. This results has been explained by the change of particulate ejection path with the development of conical structure at the target surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.125-128
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.

• Journal of electromagnetic engineering and science
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• v.13 no.3
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• pp.186-188
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• 2013

A triple 2-of-3 pulse repetition frequency (PRF) scheme is presented for medium PRF pulsed-Doppler airborne radars, and a real-time method is developed that searches for optimal or sub-optimal PRF sets according to momentary battle situations. The effectiveness of the real-time search method of PRF sets is demonstrated by the experimental results obtained using simulated data.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.170-171
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.76-77
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.91-92
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• 1993

• Nuclear Engineering and Technology
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• v.21 no.3
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• pp.231-243
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• 1989

• Bulletin of Food Technology
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• v.22 no.3
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• pp.502-512
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.60-61
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• 1993