• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Geophysics and Geophysical Exploration
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• v.7 no.2
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• pp.136-147
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• 2004

In this study, the characteristics of magnetotelluric (MT) responses due to a three-dimensional (3-D) body are analyzed with 3-D numerical modeling. The first model for the analysis consists of a single isolated conductive body embedded in a resistive homogeneous half-space. The second model has an additional conductive overburden while the other conditions remain the same as the first one. The analysis of apparent resistivities shows well that the 3-D effects are dominant over some frequency range for the first model. Two mechanisms, current channeling and induction, for secondary electric fields due to the conductive body are analyzed at various frequencies: at high frequencies induction is more dominant than channeling, while at low frequencies channeling is more dominant than induction. Tippers have a strong relation to the position of anomalous body and the real and imaginary parts of induction vector also indicate the position of anomalous body. off-line conductive anomaly sometimes causes severe problem in 2-D interpretation. In such case, induction vector analysis can give information on the existence and location of the anomalous body. Each parameter of the second model shows similar responses as those of the first model. The only difference is that the magnitude of all parameters is decreased and that the domain showing the 3-D effects becomes narrower. As shown in this study, the analysis of 3-D effects provides a useful and effective means to understand the 3-D subsurface structure and to interpret MT survey data.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.5A
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• pp.369-378
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• 2011

In this paper, the response analysis of RC(Reinforced Concrete), SC(Steel-Plate Concrete) containment buildings subjected to a large aircraft impact is performed using Autodyn-3D as Hydrocode. Until now, the impact load in the analysis of aircraft impacts has been applied to target structures at the local area by using the impact load-time history function of Riera. However in this paper, the results of aircraft crash are analyzed by using an aircraft model similar to Boeing 767 and verified by comparing the generated history of the aircraft crash against the rigid target with another history by using the Riera's function. To estimate the resistivity of the impact, the response and safety of SC containment buildings, this study is performed by comparing the four cases of plane concrete, reinforced concrete, bonded containment liner plate at reinforced concrete, and SC structure. Thus, the different behaviors between SC and RC structures when they are subjected to the extreme impact load could be anticipated. Consequently, the improved safety is expected by replacing RC structure with SC structure for nuclear power plants.

• Geophysics and Geophysical Exploration
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• v.13 no.4
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• pp.407-415
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• 2010

MT soundings were carried out in 2008, in northern Victoria, Australia, as a continuing collaboration research of 2007 between Republic of Korea, Australia, and Japan. The main purpose of this research is to investigate electrical conductivity structure and thus help understanding of tectonic structure in central Victoria, which is believed to be closely linked to mineralization and magmatic processes of this region. The survey area is located in western Lachlan Fold Belts, which is the part of Tasman Fold Belts in southeastern Australia. An MT profile of 2008 is almost parallel to the one of 2007 and approximately 50 km away. The 2D inversion result of MT data also shows that the position of conductivity discontinuity near surface are well matched with the positions of major faults, such as Avoca Fault, which is the structural boundary between Stawell and Bendigo Zones, and Heathcote Fault Zone, which marks the boundary between Bendigo and Melbourne Zones. It is also confirmed from resistivity image that internal faults in Bendigo Zone are in listric form, which is implied to be formed by structural shortening during compressional orogenic activity in Silurian.

• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.2
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• pp.211-218
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• 2021

This paper deals with the computational work to characterize the formation and pinching of a plasma in an X-pinch configuration. A resistive magnetohydrodynamic model of a single fluid and two temperature is adopted assuming a hollow conical structure in the (r,z) domain. The model includes the thermodynamic parameter of tungsten from the corrected Thomas-Fermi EOS(equation of state), determining the average ionization charge, pressure, and internal energy. The transport coefficients, resistivity and thermal conductivity, are obtained by the corrected Lee & More model and a simple radiation loss rate by recombination process is considered in the simulation. The simulation demonstrated the formation of a core-corona plasma and intense compression process near the central region which agrees with the experimental observation in the X-pinch device at Seoul National University. In addition, it confirmed the increase in radiation loss rate with the density and temperature of the core plasma.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.29-34
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• 2024

The heating element utilizing the Joule heating generated when current flows through a conductor is widely researched and developed for various industrial applications such as moisture removal in automotive windshield, high-speed train windows, and solar panels. Recently, research utilizing heating elements with various nanostructures has been actively conducted to develop flexible heating elements capable of maintaining stable heating even under mechanical deformation conditions. In this study, flexible polyurethane possessing excellent flexibility was selected as the substrate, and silver (Ag) thin films with low electrical resistivity (1.6 μΩ-cm) were fabricated as the heating layer using magnetron sputtering. The 2D heating structure of the Ag thin films demonstrated excellent heating reproducibility, reaching 95% of the target temperature within 20 seconds. Furthermore, excellent heating characteristics were maintained even under mechanically deforming environments, exhibiting outstanding flexibility with less than a 3% increase in electrical resistance observed in repetitive bending tests (10,000 cycles, based on a curvature radius of 5 mm). This demonstrates that polyurethane/Ag planar heating structure bears promising potential as a flexible/wearable heating element for curved-shaped appliances and objects subjected to diverse stresses such as human body parts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

• Geophysics and Geophysical Exploration
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• v.11 no.2
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• pp.99-108
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• 2008

To extend our detailed knowledge for the Hwasan caldera, we carried out magnetotelluric (MT) survey, which is pretty sensitive to electrical property variation in both horizontal and vertical direction of subsurface, across the Hwasan caldera with the direction of EW. The 2-D inversion results of observed MT data lead to following conclusions. Firstly, the depth of the basin basement inferred by the MT inversion results matches well with that suggested by previous potential studies, but the basement resistivity seems fairly low when compared to that of general case. This feature might be related with the large-scaled, highly conductive layer beneath the Euisung Sub-basin suggested by the previous MT study. Secondly, the high resistivity zones reaching to 4000 $\Omega{\cdot}m$ are imaged around two external ring fault boundaries. These zones are thought of as the response of the rhyolitic dykes intruding along the ring fault, and in the previous gravity data correspond to relatively high density anomalies. Thirdly, low resistivity zone reaching to 200 $\Omega{\cdot}m$ is detected around a depth of 1km beneath the central part of the caldera, which has not been yet reported in korean geophysical literatures. If we take account of the evolution model of the Hwasan caldera, this zone is regarded as the past sedimentary layer that subsided during the period of forming external ring fault system. In addition, the relatively low density anomaly observed in the central part of the caldera may be attributed to this sedimentary layer.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).