• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.33-36
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• 2002

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1406-1407
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• 2008

In this paper, a micro balanced filter in magnetically coupled LC resonators is proposed, designed, simulated by using FR-4 PCB substrate for low cost, small volume IEEE 802. 11a wireless LAN application. Two pair of coupled LC resonators using magnetic coupling of embedded inductors are applied to obtain bandpass transmission response and improve their phase and magnitude imbalance characteristics. In addition, high dielectric composite film is applied to fabricate the high Q MIM capacitors with small size and high capacitance density. It has an insertion loss of 1.4 dB, a return loss of 10 dB, a phase imbalance of 0.25 degree, and magnitude imbalance of 0.17 dB at frequency bandwidth of 200 MHz ranged from 5.15 GHz to 5.35 GHz, respectively. The proposed balanced filter has a small volume of $1.1mm{\times}1.3mm{\times}0.6mm$ (height).

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.41-48
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• 2002

This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1803-1805
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• 2000

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1347-1348
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• 2006

기존 반도체공정들이 갖는 리소그래피와 식각 등의 공정단계를 배제하는 direct-write 공정을 이용하여 친환경적인 이점을 가질 수 있는 나선형 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 $300{\mu}m$, $SiO_2$를 $3{\mu}m$으로 하였으며, CU 코일의 폭과 선간의 간격은 LAM 공정과 direct-write 공정을 이용할 수 있도록 각각 $100{\mu}m$으로 설정하여 3회 권선하였다. 인덕터는 200-500MHz 범위에서 3.5nH의 인덕턴스, 4GHz에서 최대 29 정도의 품질계수를 가지며, SRF는 2.6GHz로 시뮬레이션 결과를 얻을 수 있었다.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.172-175
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• 2004

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.141-146
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• 2009

A triangular microstrip antenna with T-shaped slits is proposed for tunable dual-band applications. The proposed antenna is designed using chip capacitors as a prototype. From this result the capacitor can be replaced to a varactor diode to control capacitance value. Since the input impedance of the antenna can be varied with the value of the chip capacitors on the T-shaped slits, the resonant frequency may be changed. The return losses are better than 10 dB at the lower band of $0.78{\sim}1.21$ GHz and 20 dB at the upper band of $1.97{\sim}2.17$ GHz, respectively. This antenna has the bandwidth of about 10 MHz and 50 MHz at each band. The peak gains of the antenna yield 0 dBi at the lower band and 3 dBi at the upper band, respectively. Details of the antenna design are described, and its performances are presented and analyzed.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.526-529
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• 2005

Dual-channel Radiometers for Earth and Atmosphere Monitoring (DREAM) is the Korean first spaceborne microwave radiometer which is the main payload of Science and Technology SATellite-2 (STSAT-2). STSAT-2 will be launched by Korea Space Launch Vehicle-l (KSL V-I) at NARO Space Center in Korea in 2007. DREAM is a two-channel, total power microwave radiometer with the center frequencies of 23.8 GHz and 37 GHz. The spaceborne radiometer is composed of an antenna unit, a receiver unit, and a data acquisition/processing unit. The bandwidths of radiometer are 600 MHz at 23.8 GHz and 1000 MHz at 37 GHz. The integration time of two channels is 200 rns. The sensitivity of DREAM is less than 0.5 K. This paper presents the required performance and system design of DREAM in detail.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.374-377
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• 2007

Dual-channel Radiometers for Earth and Atmosphere Monitoring (DREAM) was developed as the Korean first spaceborne microwave radiometer for earth remote sensing. It is the main payload of the Science and Technology SATellite-2 (STSAT-2). STSAT-2 will be launched by Korea Space Launch Vehic1e-l (KSLV-1) at NARO Space Center in Korea in 2008. The DREAM is a two-channel, total power microwave radiometers with the center frequencies of 23.8 GHz and 37 GHz. The bandwidths of radiometer are 600 MHz at 23.8 GHz and 1000 MHz at 37 GHz. The integration time is 200 ms and the required sensitivity is less than 0.5 K. In this paper, we summarize the specification and performance of the developed DREAM firstly. And we describe system integration and performance test of DREAM mounted on spacecraft.