• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.10A
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• pp.1014-1019
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• 2006

The research deals with the measurement of electromagnetic wave propagation in subway tunnels at 2.65GHz. Measurements have been conducted in 4 different types of tunnel courses, a straight tunnel, two curved tunnels, with 245m and 500m radius of curvature, and a tunnel that has both straight and curved sections. we found that the path loss exponent for the line-of-sight(LOS) region inside all the tunnels is $1.31{\sim}2.19$. The path loss exponents for LOS regions in the tunnel is lower than $(3{\sim}4)$, which corresponds to the path loss exponent factor for outdoor cellular environments. The path loss exponents of the straight tunnel, two curved tunnels with 245m and 500m radius of curvature are 1.94, 2.92, and 4.34, respectively. This indicates that a smaller radius of curvature in tunnel results in a higher path loss exponent for nonline-of-sight(NLOS) region. The path loss exponents for the NLOS region in the combined and curved tunnel, which have the same radii of cuvature, are 5.88 and 4.34, respectively. Therefore, it can be concluded that the path loss characteristics in tunnel environments are infulenced by the radii of curvature as well as the LOS distance.

• Journal of the Korea Institute of Building Construction
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• v.21 no.6
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• pp.519-527
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• 2021

In this study, an electromagnetic pulse shielding effect was obtained by applying the arc metal spraying method to the ordinary concrete. For this study, to evaluate the electrical properties in the thickness of the metal sprayed coating, 8 types of metals(Cu, CuAl, CuNi, CuZn, Al, Zn, ZnAl, AlMg) were sprayed as coatings with a thickness of 100, 200 and 500㎛. The electrical conductivity on the surface was measured with a 4-pin probe, and an electromagnetic wave shielding effect test was performed according to KS. Based on the test results, 200 ㎛ was proposed as an optimal metal coating thickness for electromagnetic pulse shielding, and it was thermally sprayed on a 300×300×100mm concrete specimen to analyze the electromagnetic wave shielding performance. However, in the area of adhesion strength, the maximum was 1.11MPa, which was found to be less than 74% of the target performance.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1778-1780
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• 2004

Microwave heating system of KSTAR consists of ECH and LHCD. ECH and LHCD offer the reliability of operation in the beginning of plasma formation and non-inductive current drive for long time steady state operation with maintaining MHD stability, respectively. LHCD demands 5 GHz of frequency and consists of c-band waveguide, 4-port circuitor, dry dummy load, dual directional coupler, E-bend, arc detector. Our system is a lineup type pulse modulator that has 45 kV of output pulse voltage, 90 A of pulse current, 4 us of pulse width. 1:4 step-up pulse transformer, 7 stages of PFN and thyratron tube (E2V, CX1191D) are used in this modulator. The purpose of this paper is to show the modulator design and experimental result.

• Journal of Institute of Control, Robotics and Systems
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• v.11 no.6
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• pp.496-501
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• 2005

This paper presents experimental results of the frequency offset locking of He-Ne lasers and the stability analysis. The master laser is free running, and the slave laser is a single-mode operating laser. The frequency difference of two lasers is stabilized to 200 MHz which can be synchronized using PLL servo. The measured beat frequency between two lasers was 200.004 MHz ${\pm}$ 0.15 MHz. The square root of Allan variance as a measure of stability in time domain is also measured. The long-term stability of the beat was worse than sort-term stability. With a gate time $\tau=1000\;s$, the square root of Allan variance was about 1 GHz. The results of the square root of Allan variance of the stabilized beat signal was a gate time of $\tau=1000\;s$, the square root of Allan variance was about 1.5 kHz. The long-term stability was improved by more than several hundred times compared with that without the stabilization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.200-200
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• 2008

This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.86-86
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• 1999

본 연구에서는 마이크로파 유전체 소자로서의 응용 및 절연 산화막으로의 응용을 위해 마이크로파 유전체 세라믹으로 사용되어 온 MgTiO3 물질을 펄스 레이저로 박막을 제조하였다. MgTiO3 는 주로 고주파에서 높은 유전율을 갖고 높은 품질계수 (22.000 at 5 GHz) 혹은 낮은 유전손실을 갖으며 유전특성의 온도 안정성이 우수하여 유전체 세라믹 재료로 응용된다. MgTiO3 박막의 성장은 KrF(파장:248nm) 엑시머 레이저를 이용했으며 공정조건으로 박막의 성장온도는 500-75$0^{\circ}C$, 산소 압력은 10-5-200mTorr, 성장 후 냉각시 산소분위기는 200Torr, 레이저 에너지 밀도는 1.5-5J/cm2 등의 조건으로 박막을 성장하였다. MgTiO3 박막을 여러 가지 기판, 즉 Al2O3(r-plane), Si, Pt 위에 성장시켰으며 기판에 따라 에픽텍셜 혹은 다결정 상태를 갖는 ilmenite 구조로 성장되었다. PLD(Pulsed laser deposition)법에 의해 형성된 MgTiO3 박막을 보면, 우선 Al2O3(r-plane) 기판위에 성장된 경우 $700^{\circ}C$에서 에픽텍셜하게 성장하였으며, Si 기판 위에 성장된 경우 $650^{\circ}C$에서부터 (003)면으로 우선 배향된 단일상의 ilmenite 구조가 형성된다. Ptdnl에 성장된 경우 $600^{\circ}C$에서부터 (003)면으로 우선배향성을 가지며 $650^{\circ}C$에서 결정의 안정화를 이루었으나, MgTiO3 박막은 전기적 특성으로 유전특성 및 유전분산 특성 등이 측정 분석되어 MgTiO3 박막의 고주파 유전체로의 응용에 관한 가능성을 토의하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.784-795
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• 2007

In this thesis, the Multi element antenna with wideband and enhanced gain characteristic is proposed to operate at both frequency range from 824 MHz to 896 11Hz for the CDMA and frequency range from 908.5 MHz to 914 MHz for the RFID band. The proposed antenna has tile size of $35{\times}15{\times}5mm^3$ in order to put it in the A model of S company and each element of the proposed antenna is folded to obtain the minimum size. To obtain the antenna with wideband and high gain characteristic, the radiator of the antenna is divided into 4 elements. As a result, bandwidth of the proposed antenna become broader and lower center frequency is appeared due to increased and lengthened current path. Moreover, the enhanced gain characteristic is verified because divided element structure that induct uniform current distribution can get increased antenna efficiency. To attain more uniform current distribution, modified structure of the feeding point that can deliver currents directly is designed. The antenna that alters the feeding structure has higher gain value. Each element is folded to increase the current paths considering the current directions to attain the miniaturization of the antenna. To measure the handset antenna, the handset case must be considered. Even though antenna is designed for predicted characteristic, the resonance frequency is shifted and antenna gain is deteriorated at predicted frequency while antenna is set in the handset case. 1.08 GHz of the resonant frequency is determined after frequency shift from 150 MHz to 200 MHz is confirmed and the maximum gain is measured as 3.1 dBi while antenna is not set in the handset. In case handset case is considered, the experimental results show that the impedance bandwidth for VSWR<2 is from 0.824 GHz to 0.936 GHz(110 MHz). This result appears that the proposed antenna can cover both CDMA and RFID band at once. The measured gain is from -3.4 dBi to -0.5 dBi and it has omni-directional pattern practically.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.1
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• pp.178-203
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• 2018

In this paper, authors have been evaluated the Frame Error Rate (FER) performance of IEEE 802.11 a/g/p standard 5 GHz frequency band WLAN over Rayleigh and Rician distributed fading channels in presence of Additive White Gaussian Noise (AWGN). Orthogonal Frequency Division Multiplexing (OFDM) based transceiver is implemented by using real-time signal processing frameworks (IEEE 802.11 Blocks) in GNU Radio Companion (GRC) and Ettus USRP N200 is used to process the symbol over the wireless radio channel. The FER is calculated for each sub-carrier conventional modulation schemes used by OFDM such as BPSK, QPSK, 16, 64-QAM with different punctuated coding rates. More precise SNR is computed by modifying the SNR calculation process of YANS and NIST error rate model to estimate more accurate FER. Here, real-time signal constellations, OFDM signal spectrums etc. are also observed to find the effect of multipath propagation of signals through flat and frequency selective fading channels. To reduce the error rate due to the multipath fading effect and Doppler shifting, channel estimation (CE) and equalization techniques such as Least Square (LS) and training based adaptive Least Mean Square (LMS) algorithm are applied in the receiver. The simulation work is practically verified at GRC by turning into a pair of Software Define Radio (SDR) as a simultaneous transceiver.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.143-148
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• 2001

PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.