• Title/Summary/Keyword: 20 um Thick Layer

Search Result 6, Processing Time 0.024 seconds

Synthesis of Top Connector for Solar Cells by Using Silver Paste (Silver Paste 를 이용한 Solar Cell 은 전극 제조)

  • Kim, Young-Kyu;Jeong, Tae-Eui;Oh, Dong-Hoon;Kim, Nam-Soo;Hong, Seong-Yeup
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.34 no.12
    • /
    • pp.1837-1842
    • /
    • 2010
  • Studies on alternative energy have been carried out for many decades because of the accelerated exhaustion of fuel. While the efficacy of solar cells is still low in comparison with that of nuclear power, solar cells have been highlighted as potential sources of alternative energy because they are environmentally friendly and have a source of unlimited energy, namely, the sun. In this study, the optimum efficiency of solar cells was simulated as a function of the incident angle of sunlight and the geometric shapes of patterns using MATLAB and MathCAD software. The foremost efficiency of the solar cell was found to be 1.10 when the thickness and width of the patterns were in the range 25-$50{\mu}m$ and 50-$100{\mu}m$, respectively. To achieve the 25 um thick layer, 100,000 cps silver paste and 500 um orifice tip has been successfully implemented with Micro-Dispensing Deposition Writing.

Improvement for Shielding Effectiveness of EMI Shield Layers using Conformal Spray Coating Scheme (콘포멀 스프레이 코팅으로 형성한 EMI 차단막의 차폐효과 개선)

  • Hur, Jung;Lee, Won-Hui
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.18 no.6
    • /
    • pp.107-112
    • /
    • 2018
  • Shielding effectiveness (SE) improvement with EMI shield layers fabricated by conformal spray coating system was studied. Silver or Nickel powder filled acrylic resin were sprayed on the samples. We compared the performance with the viscosity of 400 cPs and 100 cPs cases. The thickness range of the coating layer was 20 to 50 um for the silver, 60 to 120 um for the nickel. The shielding effectiveness was measured by ASTM D4935 using coaxial type TEM-cell. The silver-filled resin showed much better performance than that of the nickel-filled resin. The shielding effectiveness increased almost proportional to the thickness of the coating layers until being saturated around 63 dB for the silver-layer or around 34 dB for the nickel-layer. The best performance measured in this study was the shielding effectiveness of 63 dB with $35{\mu}m-thick$ of silver-layer.

Fabrication of Thick SmBCO/IBAD-MgO coated conductor (후막 SmBCO/IBAD-MgO 초전도 박막선재의 제조)

  • Lee, J.H.;Kang, D.K.;Ha, H.S.;Ko, R.K.;Oh, S.S.;Kim, H.K.;Yang, J.S.;Jung, S.W.;Moon, S.H.;Youm, D.;Kim, C.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.05a
    • /
    • pp.9-9
    • /
    • 2009
  • Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

  • PDF

Electrical Characteristic of IGZO Oxide TFTs with 3 Layer Gate Insulator

  • Lim, Sang Chul;Koo, Jae Bon;Park, Chan Woo;Jung, Soon-Won;Na, Bock Soon;Lee, Sang Seok;Cho, Kyoung Ik;Chu, Hye Yong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.344-344
    • /
    • 2014
  • Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

  • PDF

Fracture Behavior of Fe Crucible in Molten Aluminum Coated with Al and Anodized Al (수명을 향상시키기 위해 Al 메탈 코팅과 양극산화처리된 Steel 도가니의 파괴 거동)

  • Cha, Taemin;Shin, Byung-Hyun;Hwang, Myungwon;Kim, Do-Hyung;Chung, Won-Sub
    • Journal of the Korean institute of surface engineering
    • /
    • v.51 no.1
    • /
    • pp.34-39
    • /
    • 2018
  • Steel crucible used for molten Al has a problem of very limited lifetime because of the interaction between Fe and molten Al. This study was performed to improve the lifetime of steel crucible for molten Al by coating metallic Al and by further anodizing treatment to form thick and uniform anodic oxide films. The lifetime of the steel crucible was improved slightly by Al coating from 30 to 40 hours by metallic Al coating and largely to 120 hours by coating the surface with anodic oxide film. The improved lifetime was attributed to blocking of the reaction between Fe and molten Al with the help of anodic oxide layer with more than 20 um thickness on the crucible surface. The failure of the steel crucible arises from the formation of intermetallic compounds and pores at the steel/Al interface.

Effect of a Pulsed Nd:YAG laser irradiation on human gingival tissues (파동형 Nd:YAG 레이저조사가 인체 치은조직에 미치는 영향)

  • Kang, Kyung-Dong;Kim, Chun-Suk;Kim, Hyung-Soo;Kim, Hyun-Seop;Kim, Byung-Ock;Han, Kyung-Yoon
    • Journal of Periodontal and Implant Science
    • /
    • v.26 no.4
    • /
    • pp.989-1002
    • /
    • 1996
  • The purpose of this study was to determine the effect of a pulsed Nd:YAG laser irradiation on human gingival tissues. The patients, who were planned to be treated by clinical crown lengthening procedure and gingivectomy, were selected. All the patients received oral hygiene instruction, scaling and root planing at preoperation. The crest of gingival tissue on upper and lower anterior teeth was irradiated by a pulsed Nd:YAG laser(El. EN. EN060, Italy) with a fiber optic of 300 m in contact mode for 20 seconds. Gingival tissues were divided into 4 groups according to the laser power of 1.0W(10Hz, 100mJ), 2.0W(20Hz, 100mJ), 3.0W(30Hz, 100mJ) and 4.0W(40Hz, 100mJ). Immediately after the laser irradiation, the specimens were excised, fixed 10% neutral formalin, sectioned $4-6{\mu}m$ thick, stained by Hematoxylin-Eosin and Periodic Acid Schiff stain and observed under light microscope. The removed tissue depth and the coagulated layer depth due to a laser irradiation by a laser irradiation were measured on the microphotographs. The difference of measurements according to the different laser power was statistical1y analyzed by Kruskal Wallis Test with SAS program. The results were as follows : 1. In histologic findings of irradiated gingival tissues; a. In the irradiated gingival specimen with 1.0W laser power, some vesicles were observed in limited superficial layer of gingival epithelium. b. In the irradiated gingival specimen with 2.0W and 3.0W laser power, the epithelium was almost removed except for the traces of viable basal cell remnants at ret peg, and coagulation necrosis related with the thermal effect of laser was noted. c. In the irradiated gingival specimen with 4.0W laser power, complete removal of epithelium, partial removal of underlying connective tissue, and the coagulation necrosis of subjacent gingival tissue were shown. 2. The removed tissue depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of removed tissue depth between 1.0W group ($44.54{\pm}6.99um$) and 3.0W group ($99.75{\pm}6.64{\mu}m$), and between 1.0W group($44.54{\pm}6.99{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$), and between 2.0W group($98.01{\pm}4.53{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$)(P<0.05). 3. The coagulated layer depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of coagulated layer depth between 1.0W group($31.82{\pm}8.99{\mu}m$) and 3.0W group($55.99{\pm}20.94{\mu}m$), and between 1.0W group($31.82{\pm}8.99{\mu}m$) and 4.0W group($83.68{\pm}10.34{\mu}m$)(P<0.05). From this study, the results demonstrated that the effects of a pulsed Nd:YAG laser irradiation on gingival tissues seemed to depend on the laser power and that the irradiation with high power could be harmful to adjacent healthy tissue.

  • PDF