• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.229-230
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• 2006

The global metal injection moulding industry is getting mature. The technology is on its way to grow from a niche technology to a widely accepted manufacturing process. This paper addresses the latest technological trends in MIM. Challenges in materials development as well as the current limits of the technology are discussed. Trends in processing like 2-component injection moulding and micro injection moulding are presented. The European MIM market situation is described and some key factors for business success are addressed. In the discussion of future business opportunities best practice examples are included.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.378-387
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• 1994

To improve the properties of $PbTiO_3$ thin films successfully grown by thermal diffusion of 3 component layers of $Ti0_2/Pb/TiO_2(900{\AA}/900{\AA}/900{\AA})$ in preceding research, 3, 5, 7, 9, and 11 multilayer structures $(TiO_2/Pb/.../Tio_2)$ with thinner component layer of $200~300 {\AA}$ thick were deposited on Si substrate by RF sputtering, which were followed by RTA to form $PbTiO_3$ thin films. As a result, $PbTiO_3$ single phase was formed above $500^{\circ}C$. When the thickness of component layer reduced and the number of component layers increased, suppression of Pb-silicate and voids formation resulted in relatively sharp interfaces and the film composition became more homogeneous. Relative dielectric constants in MIM structure were independent of the annealing condition, but they increased with increasing thickness of the $PbTiO_3$ thin films. The maximum breakdown field in MIS structure reached 150kV/cm.

• Transactions of Materials Processing
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• v.31 no.4
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• pp.240-245
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• 2022

In this study, to achieve good electrical conductivity of a charging terminal component in electric vehicles, we investigated the microstructure evolution of pure-Cu subjected to metal injection molding by controlling the sintering variables, such as temperature and time. Thus, three samples were sintered at temperatures ranging from 1000 ℃ to 1050 ℃ near to the melting temperature of 1085 ℃ for 1 and 10 h after thermal evaporation of binder at 730 ℃. Both procedures were made using a unified furnace under Ar+H₂ gas with high purity. The structural observation displayed that the grain size as well as the compactness (a reciprocal of porosity) increased simultaneously as temperature and time increased. This gave rise to high thermal conductivity of 90% IACS together with high density, which was mainly attributed to decrease in fractions of grain boundaries and micro-pores working as effective scattering center for electron movement.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.