• Bulletin of the Korean Chemical Society
• /
• v.15 no.6
• /
• pp.428-432
• /
• 1994

The crystals of ${\beta}-and\;{\beta}'-(ET)_2ICl_2$ have a modified structure of organic superconductor ${\beta}(ET)_2I_3$. These salts possess strictly different physical properties : the ${\beta}$ phase is a metal but the ${\beta}'$ phase is a semiconductor. Our band electronic structure calculations show that the ${\beta}$ phase is somewhat anisotropic 2D metal and the ${\beta}'$ phase with the 1D character in electronic structure is magnetic insulating, in good agreement with experimental indications.

• Advances in nano research
• /
• v.9 no.2
• /
• pp.105-112
• /
• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.9
• /
• pp.841-848
• /
• 2016

In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.46 no.5
• /
• pp.162-167
• /
• 2009

In this paper, we present a compact Ultra-Wideband band-pass filter using a high-pass filter and low-pass filter. The structure of our proposed band-pass filter is very simple and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement the insertion loss is less than 0.5dB throughout the pass-band of $2.1GHz{\sim}10.56GHz$, the return loss is more than 20dB and the group delay maximum variation is 0.23ns from 0.12ns to 0.35ns.

• Journal of electromagnetic engineering and science
• /
• v.6 no.2
• /
• pp.98-102
• /
• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.

• Current Optics and Photonics
• /
• v.2 no.6
• /
• pp.629-634
• /
• 2018

A broad dual-band terahertz metamaterial filter with sharp out-of-band rejections is designed and demonstrated. The center frequencies of the first and the second bands occur at 0.35 THz and 0.96 THz with 3 dB relative bandwidth of 31% and 17%, respectively. Results are measured using a THz time-domain spectroscopy system that shows agreement with simulations. Physical mechanisms of the broad dual-band resonance are clarified based on transmissions of different structures and surface current density distributions. Influence of structure parameters on the transmission characteristics are discussed. Symmetry of the structure ensures the filter polarization independence at normal incidence. These results supported by the design of the filter could find applications in broad multi-band sensors, terahertz communication systems, and other emerging terahertz technologies.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.8
• /
• pp.68-73
• /
• 2010

In this paper, a compact Ultra-Wideband band-pass filter with notched band at 5.8GHz by using LC resonator is proposed. The structure of the proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) is used to get the low-pass filter characteristics and the LC resonator is used to get the notched filter. The proposed band-pass filter can be much smaller than a cascaded filter type. The LC resonator is designed with a radial stub and small stub. As a result of measurement, the insertion loss is less than 0.5dB throughout the pass-band of 2.21GHz~10.92GHz, the return loss is more than 16dB and the maximum variation of group delay is 0.29ns and a notched band is 5.2GHz~6.2GHz.

• Proceeding of EDISON Challenge
• /
• 2015.03a
• /
• pp.324-329
• /
• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Journal of electromagnetic engineering and science
• /
• v.16 no.3
• /
• pp.159-163
• /
• 2016

In this paper, a frequency tunable double band-stop resonator (BSR) with voltage control by varactor diodes is suggested. It makes use of a half-wavelength shunt stub as its conventional basic structure, which is replaced by the distributed LC block. Taking advantage of the nonlinear relationship between the frequency and electrical length of the distributed LC block, a dual-band device can be designed easily. With two varactor diodes, the stop-band of the resonator can be easily tuned by controlling the electrical length of the resonator structure. The measurement results show the tuning ranges of the two operating frequencies to be 1.82 GHz to 2.03 GHz and 2.81 GHz to 3.03 GHz, respectively. The entire size of the resonator is $10mm{\times}11mm$, which is very compact.

• Applied Science and Convergence Technology
• /
• v.26 no.3
• /
• pp.43-46
• /
• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.