• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.1
• /
• pp.174-179
• /
• 2013

This paper presents a capacitor loaded tunable bandpass chip filter using multiple split ring resonators (MSRRs) with two transmission zeros. To obtain high selectivity and minimize the chip size, asymmetric feed lines are adopted to make a pair of transmission zeros located on each side of passband. Compared with conventional filters using cross-coupling or source-load coupling techniques, the proposed filter uses only two resonators to achieve high selectivity through a pair of transmission zeros. In order to optimize selectivity and sensitivity (insertion loss) of the filter, the effect of the position of asymmetric feed line on transmission zeros and insertion loss is analyzed. The SOI-CMOS switched capacitor composed of metal-insulator-metal (MIM) capacitor and stacked-FETs is loaded at outer rings of MSRRs to tune passband frequency and handle high power signal up to +30 dBm. By turning on or off the gate of the transistors, the passband frequency can be shifted from 4GH to 5GHz. The proposed on-chip filter is implemented in 0.18-${\mu}m$ SOI CMOS technology that makes it possible to integrate high-Q passive devices and stacked-FETs. The designed filter shows miniaturized size of only $4mm{\times}2mm$ (i.e., $0.177{\lambda}g{\times}0.088{\lambda}g$), where ${\lambda}g$ denotes the guided wave length of the $50{\Omega}$ microstrip line at center frequency. The measured insertion loss (S21)is about 5.1dB and 6.9dB at 5.4GHz and 4.5GHz, respectively. The designed filter shows out-of-band rejection greater than 20dB at 500MHz offset from center frequency.

• Journal of Advanced Navigation Technology
• /
• v.18 no.5
• /
• pp.476-482
• /
• 2014

Recently, with the growth of various sensor applications, the need of wireless communication systems which can support variable data rate is increasing. IEEE 802.15.4 LR-WPAN system using 2.45 GHz frequency band is very popular for the sensor applications. However, since LR-WPAN only supports the data rate of 250 kbps, it has a limit to be applied to various sensor networks. Therefore, we define the preamble structure which can support the data rates of 31.25 kbps, 62.5 kbps, 125 kbps, and present the low-complexity hardware architecture for time synchronizer based on double-correlation algorithm which can resist the CFO (carrier frequency offset). Implementation results show that the proposed time synchronizer include the logic slice of 18.36 K and four DSP48s, which are reduced at the rate of 79.1% and 99.4%, respectively, compared with existing architecture.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.10
• /
• pp.1136-1141
• /
• 2007

In this paper, we designed and fabricated EM wave absorbers using Sendust, $Al(OH)_3$ and CPE(Chlorinated Polyethylene). We compared the absorption properties of samples containing 0 wt.%, 3 wt.%, 5 wt.%, 7 wt.% of $Al(OH)_3$. The optimized composition ratio of $Al(OH)_3$ is 5 wt.%, and the absorption property curve just has the tendency to improve at 5 wt.% of $Al(OH)_3$. And we used this characteristics to design the double-layered EM wave absorber. The double-layered EM wave absorber has thickness of 2 mm and has absorption ability more than 18.5 dB at a wireless LAN frequency band using 2.4 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.2 s.117
• /
• pp.213-218
• /
• 2007

In this paper, we propose the design and fabrication on high frequency CMOS VCO for DS-UWB(Direct-Sequence Ultra-WideBand) applications using 0.18 ${\mu}m$ process. The complementary cross-coupled LC oscillator architecture which is composed of PMOS, NMOS symmetrically, is designed for improving the phase noise characteristic. The resistor is used instead of current source that reduce the 1/f noise of current source. The high-speed buffer is needed for measuring the output characteristic of VCO using spectrum analyzer, therefore the high-speed inverter buffer is designed with VCO. A fabricated core VCO size is $340{\mu}m{\times}535{\mu}m$. The VCO is tunable between 7.09 and 7.52 GHz and has a phase noise lower than -107 dBc/Hz at 1-MHz offset over entire tuning range. The measured harmonic suppression is 32 dB. The VCO core circuit draws 2.0 mA from a 1.8 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.8
• /
• pp.830-838
• /
• 2003

In this paper, TX/RX dual operation microstrip single antenna for satellite communication is designed, analyzed, fabricated and measured. TX/RX frequency ranges are 14.0∼l4.5 GHz, 11.7∼12.75 GHz in respectively and vertical and horizontal polarizations are used for TX and RX. This antenna uses microstrip direct feeding for RX and aperture coupled strip-line feeding for TX and accommodates stacked elements for a high directivity and wide impedance bandwidth. In an analysis of single element, FDTD and MOM was compared and FDTD analysis was more accurate because of the consideration of finite structure and imperfect two ground planes. The proposed structure facilitates generally to an extension of two dimensional array and lower an unwanted radiation by strip-line feed in TX. TX/RX 8${\times}$4 array has a return loss below -10 dB, -14 dB in TX, RX respectively and a gain ranging from 19.1∼20.7 dB in TX, 21.2∼21.8 dB in RX which has a radiation efficiency of 43∼5l %, 52∼57 %.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.575-578
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band Microwave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_1$ $_{dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a P $_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a P $_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.210-219
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• Smart Media Journal
• /
• v.4 no.2
• /
• pp.55-61
• /
• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.19 no.3
• /
• pp.13-18
• /
• 1982

This Paper is an experimental study on the effective dielectric constant of microstrip line. To quantify the dispersive effects on a microstrip line, the effective dielectric constant, which is the ratio of free space wavelength to guide wavelength, is calculated for teflon substrates. The calculation is based on the Fourier transform of the current distribution on microstrip line. Measurements of effective dielectric constant using a microstrip elliptic resonator and ring resonator are also described. As a result, the computed values of effective dielectric constant agree almost all with measured values, using ring and elliptic resonator, in case of w/h or the ratio of microstrip width to substrate thickness equal unity over frequency range of 8 to 12GHz.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.12 no.4
• /
• pp.1458-1470
• /
• 2018

In this letter, a new dual-port Multiple-Input Multiple-Output (MIMO) antenna is introduced which has two independent signal feeding ports in a single antenna element to achieve smaller antenna volumes for the 5G mobile applications. The dual-port structure is implemented by adding a cross coupled semi-loop (CCSL) antenna as the secondary radiator to the ground short of inverted-F antenna (IFA). It is found that the port to port isolation is not deteriorated when an IFA and CCSL is combined to form a dual-port structure. The isolation property of the proposed antenna is compared with a polarization diversity based dual-port antenna proposed in the literature [9]. The operating frequency range is 3.3-4.0 GHz which is suitable for places where $4{\times}4$ MIMO systems are supposed to be deployed such as in China, EU, Korea and Japan at the band ${\times}$ (3.3 - 3.8GHz. The measured 6-dB impedance bandwidths of the proposed antennas are larger than 700 MHz with isolation between the feeding ports higher than 18 dB [1-2]. The simulation and measurement results show that the proposed antenna concept is a very promising alternative for 5G mobile applications.