• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.428-432
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• 1998

We fabricated 1$\times$8 array of GaAs/AlGaAs quantum well infrared photodetectors for the long wavelength infrared detection which is based on the bound-continuum intersubband transition, and characterized its electrical and optical properties. The device was grown on SI-GaAs(100) by the molecular beam epitaxy and consisted of 25 period of 40 ${\AA} $ GaAs well and 500 ${\AA} $ $Al_{0.28} Ga_{0.72}$ As barrier. To reduce the possibility of interface states only the center 20 ${\AA} $ of the well was doped with Si ($N_D=2{\times}10^{18} cm^{-3}$). We etched the sample to make square mesas of 200$\times$200 $\mu\textrm{m}^2$ and made an ohmic contact on each pixel with Au/Ge. Current-voltage characteristics and photoresponse spectrum of each detector reveal that the array was highly uniform and stable. The spectral responsivity and the detectivity $D^＊$ were measured to be 180,260 V/W and $4.9{\times}10^9cm\sqrt{Hz}/W$ respectively at the peak wavelength of $\lambda$ =7.8 $\mu\textrm{m}$ and at T=10 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.330-337
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• 2005

La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.

• Journal of the Korea Society of Computer and Information
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• v.5 no.4
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• pp.102-105
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• 2000

The self-aligned AICaAs/GaAs HBTs with the mesa-etched emitter showed severe degradation in current gain under stress. The cause was identified to be due to instability of the surface states on extrinsic base. In this paper the surface states were diminished by the hetero-passivation of the InGaP ledge emitter and the reliability was drastically improved. The activation energy of current gain degradation was extracted to be 1.97eV and MTTF to be 4.8$\times$108 at 14$0^{\circ}C$ which has satisfied MIL standards.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.21 no.1
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• pp.97-124
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• 1976

To find out the most effective method of treatments for the induction of sprouting of dormant seed potato pieces for the fall crop production of Irish cobbler, this experiment was carried out with sprout inducing bed and field performance trial. In GA treatments, about 10 days were required to sprout and resulted uniform and thin 3-4 sprouts per tuber piece, but sprouts were slender and rooting was not observed. In Ethrel treatments, 20-25 days were required, and sprouts were inferior than that of GA treatment in uniformity of sprouting, and percentage of rotten pieces and of healthy sprouted tuber pieces, but number of sprouts per tuber pieces was low, being 1-2, and sprouts were short, thick, and healthy, and showed good rooting. In GA and Ethrel mixture treatments, 1-2 more days were required to sprout than GA treatments, but sprouts were relatively healthy, and other sprouting pattern were like that of GA treatments. In Ethylene chlorohydrin and 6-Benzyl-adenine treatments, sprouting was like that of Ethrel treatments, but much more days were required than Ethrel treatments and tendency of severe rotting was observed. Optimum treating methods of promising chemicals found to be 1-2 and 2-5 ppm GA solution, 500 and 1000-2000 ppm Ethrel solution, and 1-2＋250-500 and 5＋250-500 ppm GA and Ethrel mixture solution for 60 min. treatment of tuber piece and whole-tuber, respectively. Induction of sprouting in dry and hot time resulted severer rotting of tuber pieces during the induction of sprouting and with the advancement of dormancy, being delayed in date of treatment, tendency of promotion of sprouting and rooting was observed. When sprouted tuber piece was transplanted at the same date, yields were in order of Ethrel, GA and Ethrel mixture, and GA treatment, indicating the correlation between yield and healthiness of sprout and rooting status of sprouted tuber piece. In all treatments, earlier transplanting resulted higher yields.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• Journal of mucopolysaccharidosis and rare diseases
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• v.5 no.1
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• pp.8-11
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• 2021

Glutaric aciduria type 1 (GA1; OMIM #231670) is a rare autosomal recessive-inherited neurometabolic disorder caused by the deficiency of glutaryl-CoA dehydrogenase (GCDH), which is encoded by the GCDH gene. It results in the accumulation of glutaric acid (GA), 3-hydroxyglutaric acid (3-OH-GA), glutaconic acid, and glutarylcarnitine (C5DC). These metabolites are considered to damage the striatum through an excitotoxic mechanism. The treatments of GA1 known to date are metabolic maintenance treatment based on a low-lysine diet and emergency treatment during acute illness. However, treatment after the onset of neurological symptoms has limited effectiveness and is associated with poor outcomes, and the effect of treatment and disease course after treatment are not good. After the implementation of newborn screening, the incidence of acute encephalopathic crisis fell to 10%-20% with early diagnosis, preventative dietary management, and aggressive medical intervention during acute episodes. Recently, several cohort studies have been published on the natural course and treatment of GA1 patients. This mini review will cover the clinical symptoms, natural history, and treatment of GA1 through a literature review.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.663-669
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• 1994

Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Journal of Microbiology and Biotechnology
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• v.15 no.2
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• pp.239-246
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• 2005

Some characteristics of two forms of glucoamylase (glucan 1 A-$\alpha$-glucosidase, EC 3. 2. I. 3) purified from Aspergillus coreanus NR 15-1 were investigated. The enzymes were produced on a solid, uncooked wheat bran medium of A. coreanus NR 15-1 isolated from traditional Korean Nuruk. Two forms of glucoamylase, GA-I and GA-II, were purified to homogenity after 5.8-fold and 9.6-fold purification, respectively, judged by disc- and SDS-polyacrylamide gel electrophoresis. The molecular mass of GA-I and GA-II were estimated to be 62 kDa and 90 kDa by Sephadex G-1OO gel filtration, and 64 kDa and 91 kDa by SDS-polyacrylarnide gel electrophoresis, respectively. The optimum temperatures of GA-I and GA-II were 60$^circ$C and 65$^circ$C, respectively, and the optimum pH was 4.0. The activation energy (Ea value) of GA-I and GA-II was 11.66 kcal/mol and 12.09 kcal/mol, respectively, and the apparent Michaelis constants (K_{m}) of GA-I and GA-II for soluble starch were found to be 3.57 mg/ml and 6.25 mg/ml, respectively. Both enzymes were activated by 1 mM Mn^{2+} and Cu^{2+}, but were completely inhibited by 1 mM N­bromosuccinimide. The GA-II was weakly inhibited by 1 mM p-CMB, dithiothreitol, EDTA, and pyridoxal 5-phosphate, but GA-I was not inhibited by those compounds. Both enzymes had significant ability to digest raw wheat starch and raw rice starch, and hydrolysis rates of raw wheat starch by GA-I and GA-II were 7.8- and 7.3-fold higher than with soluble starch, respectively.