• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.334.1-334.1
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• 2016

다른 재료에 비해 에너지 변환 효율의 관점에서 높은 경쟁력을 가진 결정질 실리콘은 지난 수십 년 동안 그 특성이 태양전지 분야에 널리 이용되어 왔다. 하지만 결정질 실리콘 웨이퍼는 일반적으로 제조 단계에서 많은 양의 에너지를 소비하고 절단 단계에서 절단 손실(Kerf-loss)이 발생된다. Epoxy Resin을 이용한 Kerf-less Wafering은 초박형 실리콘 웨이퍼 제조 기술 중 하나로, 비교적 간단한 장비와 공정을 통하여 절단 손실 없이 $50{\mu}m$이하의 초박형 실리콘 웨이퍼를 얻을 수 있는 기술이다. 실리콘과 Epoxy Resin 간의 열팽창 계수 차이를 이용하여 초박형 실리콘을 박리 시키는 기술로, 실리콘 기판 위에 Epoxy Resin으로 stress inducing layer를 올려 공정을 진행한다. stress inducing layer를 경화시키는 열처리가 끝나고 급냉되는 과정에서 stress inducing layer에 의해 실리콘 기판에 큰 응력이 가해지게 되고 실리콘 기판에 crack이 발생된다. 공정이 계속 됨에 따라 발생된 crack은 실리콘 표면과 평행한 방향으로 전파 되고 초박형 실리콘 layer가 실리콘 기판에서 박리 된다. 본 실험에서 중요한 공정 변수로는 stress inducing layer의 구성성분 및 두께, 열처리 온도 및 시간, cooling rate 등이 있다. 이러한 공정 변수들을 조절 하여 Epoxy Resin을 이용하여 $100{\mu}m$ 이하의 박리된 wafer를 얻을 수 있었다. 박리된 wafer의 단면과 두께를 Scanning Electron Microscopy(SEM)을 통해 관찰 하였고, 이를 통해 초박형 실리콘 박리 공정에 대한 연구를 진행하였다.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2013.11a
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• pp.173-174
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• 2013

In this study, the tensile properties of sealants by heat deterioration were measured and analysed to gather the basic data of sealant because these studies do not have been investigated in Korea. Most general one-component silicone sealants were used and test specimen was I-type. The test parameters are sealant types which have different density and heat deterioration time in 80℃. As a result, the rat of reduction in area by heat deterioration was considerable increased at SR-A compared with SR-B. The tensile properties by heat deterioration decreased at SR-A because the specimen by deterioration occurred adhesive failure before tensile test. However, SR-B specimen was increased at maximum tensile stress but decreased at elongation in maximum tensile stress. Also, Maximum principal stress was measured at the edge of specimen by FEM simulation in order to find out failure points.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.671-671
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• 2013

실리콘 태양전지와 박막형 태양전지의 뒤를 이어, 제3세대로 분류되는 양자점 감응형 태양전지(QDSC)에 대한 연구가 활발히 진행되고 있다. 이 태양전지의 TCO로는 주로 ZnO, TiO2가 대부분 사용되고 있으며, 양자점 물질로는 CdS, CdSe, CdTe, PbS, PbSe 등의 카드뮴 및 납을 주 성분으로 하는 물질들에 대한 연구만 중점적으로 이루어지고 있는 실정이다. 이런 물질들은 현재까지 알려진 한도 내에서는 QDSC 효율 중 가장 좋은 효율을 나타내고는 있으나 이런 타입의 QDSC가 상용화된다면 환경에 노출되었을 때에 미치는 악영향이 매우 큰 중금속 물질들로 이루어져 있어, 이를 극복할 수 있는 친환경 성분의 물질에 대한 연구 또한 필요한 시점이다. 따라서 본 연구에서는 CdS를 대체할 수 있는 물질로 Ag2S를 선정, 이에 대한 연구를 진행하였다. Ag2S는 밴드갭이 1.1eV의 물질로, CdS의 2.3 eV와 비교해 상당히 작은 밴드갭을 가져 월등히 넓은 영역에서 빛을 흡수할 수 있다는 장점을 가지고 있으며, 동시에 이로 인한 전자-정공 재결합이 빨라 태양전지로 제작시에 Voc가 낮게 형성된다는 단점도 가지고 있다. 태양전지에 사용된 TCO물질은 ZnO 나노선을 사용했으며, 본 연구실에서 기존에 개발한 수열합성법을 통해 제작하였다. 이를 활용하여 최종적으로 제작한 태양전지의 효율은 CdS/ZnO QDSC가 1.2%, Ag2S/ZnO QDSC가 1.2%로 동일한 성능을 나타냈으며, CdS를 대체할 물질로 Ag2S의 가능성을 보여준 결과라 할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.312.1-312.1
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• 2014

Chalcopyrite계 화합물 반도체인 $Cu(InGa)Se_2$ (CIGS)는 직접천이형 에너지 밴드갭과 전파장 영역에 대하여 높은 광흡수계수($1{\times}$[10]^5/cm)를 가지므로 두께 $1{\sim}2{\mu}m$인 박막형태으로 고효율의 태양전지 제조가 가능하다. 또한, 박막공정의 저가 가능성을 나타내면서 전세계적으로 많은 연구와 관심을 받고 있고, 현재 상용화되어 있는 결정질실리콘 태양전지를 대체할만한 재료로 주목 받고 있다. 일반적으로, CIGS박막형 태양전지 구성은는 유리를 기판으로 하여 5개의 단위 박막인 Mo 후면전극, p형 반도체 CIGS 광흡수층, n형 반도체 CdS 버퍼층, doped-ZnO 상부 투명전극, $MgF_2$ 반사방지막으로 이루어진다. 이들 중에서 태양전지의 에너지 변환효율에 결정적인 영향을 미치는 구성된다. CIGS 광흡수층의 제조는 크게 진공법과 비진공방법으로 나뉜다. 현재까지 보고된 문헌에 따르면 CIGS 박막형 태양전지의 경우에 동시증발법으로 20.3%의 에너지 변환효율을 보였지만,는데, 이는 진공장비 특성상 공정단가가 높고 대면적화가 어렵다는 단점을 가진다. 따라서, 비진공법을 이용하여 광흡수층 제작하는 것이 기술적으로 진보할 여지가 크다고 볼 수 있다. 반면 현재 상용화되어 있는 결정질실리콘 태양전지를 대체할만한 방법으로 주목 받고 있는 비진공을 이용한 저가공정은 최근 15.5%의 에너지 변환효율이 보고 되었다. 비진공법에는 전계를 이용한 증착법 및 스프레이법으로 나뉘며, 이들 광흡수층 재료의 화학적 합성은 III족 원소인 In, Ga의 함량비에 따라 광흡수층의 에너지 밴드갭(1.04~1.5 eV) 조절이 가능하다. 따라서, 본 연구에서는 비진공법에 사용되는 CIGS재료의 화학적 합성조건을 변화시켜 III족 원소의 조성비 조절을 시도하였다. CIGS 분말 시료의 입자 형태와 크기를 FE-SEM을 이용하여 관찰하였고, 화합물의 성분비를 EDX 및 XRD 분석을 통해 Ga 함량에 따른 구조적 차이를 비교해 보았다.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.11a
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• pp.63-64
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• 2014

In this study, we has a purpose to estimate the joint movement responsiveness performance for the domestic products of one-component structural silicon sealants. For this purpose, we make a comparative study for the four domestic products focused on tensile properties after allowed the cyclic-movements for three days at initial step of curing phase. A joint movement range ±10% and the rate of compression and extension 3.2mm/h were assumed in those tests. As a result, the large space were induced inside the sealant by rupture, and then adhesion and cohesion failures were caused by stress concentration. The tensile properties were reduced by 15~60% in comparison with physical properties. In this case, the generating defect was caused and the service-life was decreased. Thus, further researches as relationship of test condition and products properties on this behavior would be studied.

• Polymer(Korea)
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• v.38 no.3
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• pp.351-357
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• 2014

In membrane covered stent, occlusion and fracture from membrane degradation by gastric acid sometimes occurred. Therefore, we investigated the physical properties of membrane covered stent according to its ingredient and concentration in gastric acid environment. Membrane covered stents consisted of silicone and polyurethane with 15%, 18%, 20% concentrations were used. After incubating stents in a condition of pH 1.2, we checked any changes at every 3 weeks for 18 weeks. The changes of membrane surface, radial expansion and recovery force of stent were investigated. Coating thickness increased proportionally to an increase in ingredient concentration. Surface was evenly coated with silicone compared to the case with polyurethane and its homogeneity was excellent in a high concentration. Degradation was much severe in the case of polyurethane. The radial force of silicone was higher than polyurethane, and the decrease of radial and recovery force was higher in the case of polyurethane. In conclusion, high concentration of silicone membrane was more stable than polyurethane in acid environment of in vitro study.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.12
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• pp.559-565
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• 2002

Today, because a quality factor of the inductor fabricated on silicon substrate for RFIC is under 12, the realization of inductor haying high-Q is essential. In this paper, two inductors having improved Q-factor are proposed and fabricated using a bondwire on silicon substrate. Also for the PGS is applied to the same inductors, four inductors are fabricated finally The bondwire Inductors have the relatively low conductor loss due to wide cross-section area and they can reduce the parastic capacitance very much because they are located in the air. Simulation and measurement results show that the proposed inductors have much more improved Q-factor, 15, than a conventional spiral inductor at 1.5 GHz. Because of the use of an automatic bonding machine, we can fabricate the high - Q inductors very easily, repeatedly.

• Journal of Adhesion and Interface
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• v.25 no.2
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• pp.63-68
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• 2024

In this study, the contamination of gold(Au) wire according to the types of rinse applied for surface treatment in the wire bonding process is investigated and confirmed. For the surface treatment, rinses containing silicon(Si) or those based on organic materials are mainly employed. To identify their effects, surface treatment is conducted on Au wire using two types of rinse at a 1.0 wt% concentration, referred to as Si-including and Oil-based rinse-coated Au wire. Subsequently, a simulation experiment is performed to verify the reactivity of dust containing Si components that could occur in the semiconductor process. Through optical microscopy (OM) and scanning electron microscopy(SEM) analysis, it is observed that a larger amount of dust is adsorbed on the surface of Si-including rinse-coated Au wire compared with the Oil-based rinse-coated Au wire. This is attributed that the rinse containing Si components is relatively polar, causing polar interactions with dust, which also has polarity. Therefore, it is expected that using a rinse without Si components can reduce contamination caused by dust, thereby decreasing the defect rate in the practical wire bonding process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.4
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• pp.366-372
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• 2019

In this paper, we fabricated a capacitive humidity sensor with an IDT(Interdigitated) electrode using commercial polyimide containing fluorine, and its properties were measured and analyzed. First, in order to analyze the composition of commercial polyimide, EDS analysis was performed after patterning process on a silicon wafer. The area of the humidity sensor was $1.56{\times}1.66mm^2$, and the width of the electrode and the gap between the electrodes were $3{\mu}m$ each. The number of electrodes was 166 and the length of the electrode was 1.294mm for the sensitivity of the sensor. The fabricated sensor showed that the sensitivity was 24 fF/%RH, linearity <${\pm}2.5%RH$ and hysteresis <${\pm}4%RH$. As a result of measuring the capacitance value according to the frequency change, the capacitance vlaue decreased with increasing frequency. Capacitance deviations with 10kHz and 100kHz were measured as 0.3pF on average.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.196-202
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• 2000

In this paper, we proposed the new bridge combination detection method for three dimensional piezoresistive silicon accelerometer, and the accelerometer with SOI structures was fabricated by bulk micromachining technology for using higher temperature than $200^{\circ}C$. The sensitivities of fabricated accelerometer for X, Y and Z-axis acceleration were about 8mV/V G, 8mV/V G and 40mV/V G. The nonlinearity of the output voltage was 1.6%FS and cross-axis sensitivity was within 4.6%. We confirmed that the three bridges detection method is very simple and the output characteristics of this accelerometer were similar to arithmetic circuit method accelerometer. The temperature characteristics of SOI structure accelerometer showed high operating temperature and good stability. And the temperature coefficient of offset voltage and sensitivity were $1033ppm^{\circ}C^{-1}$ and $1145ppm^{\circ}C$ respectively.