• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.682-684
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• 2004

The effect of 1/f noise by the random telegraph signal(RTS) on the phase noise and the jitter of CMOS ring Oscillator is investigated. 10 parallel piece-wise-linear current sources connected to each node model the RTS signals. The In, the power spectral density and the jitter of output of the ring oscillator are simulated as functions of the amplitude and time constant of RTS current source. It is confirmed that the increase of amplitude of RTS is directly related to the increase of the width of phase noise md the value of jitter. The shorter the time constant is, the wider width of FET peak and the larger value of cycle to cycle jitter are.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.1-8
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• 2004

The anomalous behavior of the 1/f noise of halo or pocket ion implanted MOSFETs is investigated. The model for the anomalous 1/f noise behaviors of MOSFETs, which consist of inhomogeneous conductance along the channel is improved within a regional approximation as previous works and presented in a fen directly applicable to halo MOSFETs. The presented model reduces to the previous results, discussed in the linear region operation, for small drain bias. Comparisons with experimental results show that the 1/f model based on the regional approach can be applicable for limited ranges, especially for sufficiently large gate bias voltages.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.48-53
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• 1996

We present a microscopic description for generation of 1/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations. 1/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature . The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated form the structural fluctuations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.226-235
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• 1999

To investigate SPICE noise model and the behavior of its parameters, 1/f noise of NMOS devices fabricated by BiCMOS process is measured and compared to the various noise models and measured results. For the long channel devices, bias dependence of the drain current noise power spectral density $S_{Id}$ of NMOS is similar to the previous results. Equivalent gate noise power spectral density $S_{Vg}$ shows weak dependence on the gate and drain voltages in long channel NMOS as the previous results. However, it is shown that most of published noise models are difficult to apply to short channel devices. Therefore, in this study, with comparison of our experimental results, we have tried to find the model of 1/f noise, appropriate for our NMOS device fabricated by BiCMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.7
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• pp.615-627
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• 1991

In this paper the relative magnitudes of the 1/f noise constants were experimentally investigated in the plana type's resistors fabricated with the different type's semicondector materials, and a new measurement technique for the 1/f noise in the semiconductor plana type's resistors may be located at the semiconductor and silicon dioxde.

• Journal of KIISE:Information Networking
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• v.37 no.1
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• pp.27-34
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• 2010

In this paper, we examine a long-range dependence in an active measurement of a network traffic which has been a well known characteristic from analyses of a passive network traffic measurement. To this end, we utilize RTT(Round Trip Time), which is a typical active measurement measured by PingER project, and perform a relevant analysis to a time series of both RTT and its volatilities. The RTT time series exhibits a long-range dependence or a 1/f noise. The volatilities, defined as a higher-order variation, follow a log-normal distribution. Furthermore, volatilities show a long-range dependence in relatively short time intervals, and a long-range dependence and/or 1/f noise in long time intervals. From this study, we find that the long-range dependence is a characteristic of not only a passive traffic measurement but also an active measurement of network traffic such as RTT. From these findings, we can infer that the long-range dependence is a characteristic of network traffic independent of a type of measurements. In particular, an active measurement exhibits a 1/f noise which cannot be usually found in a passive measurement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.187-194
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• 2005

An analysis of the 1/f or flicker noise in FD n-channel Double Gate SOI MOSFET is proposed. In this paper, the variation of power spectral density (PSD) of the equivalent noise voltage and noise current with respect to frequency, channel length and gate-to-source voltage at various temperatures and exponent $C(i.e\;1/f^c$ is reported. The temperature is varied 125 K from to room temperature. The variation of PSD with respect to channel length down to $0.1{\mu}m$ technology is considered. It is analyzed that l/f noise in FD n-channel Double Gate SOI MOSFET is due to both carrierdensity fluctuations and mobility-fluctuations. But controversy still exits to its origin.

• Journal of electromagnetic engineering and science
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• v.4 no.3
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• pp.137-142
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• 2004

In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.

• 한국연소학회:학술대회논문집
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• 2004.06a
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• pp.27-33
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• 2004

The Noise generation mechanisms of propane laminar premixed flames on a slot burner have been studied experimentally. The sound levels and frequencies were measured for various mixture flow rates (velocities) and equivalence ratios. The primary frequency of self-induced noise increases with the mean velocity of mixture as $f{\;}{\propto}{\;}U_f^{1.144}$ and the measured noise level increases with the mixture flow rate and equivalence ratio as $p{\;}{\propto}{\;}U_f^{1.7}$$F^{8.2}$. The nature of flame oscillation and the noise generation mechanisms are also investigated using a high speed CCD camera and a DSRL camera. The repetition of sudden extinction at the tip of flame is evident and the repetition rates are identical to the primary frequencies obtained from the FFT analysis of sound pressure signals. CH chemiluminescence intensities of the oscillating flames were also measured by PMT with a 431 nm(10 FWHM) band pass filter and compared to the pressure signals.