• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.20-20
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• 2008

최근 LEDs가 동일 효율의 전구에 비해 에너지 절감 효과 크며 신뢰성이 뛰어나다기 때문에 기존 광원을 빠르게 대체해 나가고 있다. 특히 자외선 파장을 가지는 LEDs는 발열이 낮아 냉각장치가 필요 없으며, 수명이 길어 기존 UV lamp에 비해 많은 장점을 가지고 있기 때문에 많은 관심을 밭고 있다. 그럼에도 불구하고 자외선 LEDs는 제조 단가가 높고 power가 낮아 소요량이 많은 등 아직 해결해야 할 부분이 많기 때문에 이를 해결하기 위해 여러가지 재료와 다양한 구조가 고려되고 있다. 그 중 ZnO는 II-VI족 화합물 반도체로써 UV영역의 넓은 밴드갭(3.37eV)을 가지는 투명한 재료이다. 특히 ZnO는 60meV의 큰 엑시톤 결합에너지를 가지며, 가시광 영역에서 높은 투과율을 가지고, 상온에서 물리적, 화학적으로 안정하기 때문에 UV sensor, UV laser, UV converter, UV LEDs 등 광소자 분야에서 연구가 활발히 진행되고 있다. ZnO가 광소자의 발광재료로써 높은 효율을 얻기 위해서는 결정성을 높여 내부 결함을 감소시키며, 발광 면적을 높일 수 있는 구조가 요구된다. 특히 MOCVD 법으로 성장한 나노막대는 에피성장되어 높은 결정성을 기대할 수 있으며, 성장 조건을 조절함으로써 나노막대의 aspect ratio와 밀도 제어할 수 있기 때문에 표면적을 효과적으로 넓혀 높은 발광효율을 얻을 수 있다. 본 실험에서는 MOCVD 법으로 실리콘과 사파이어 기판 위에 다양한 성장 온도를 가진 나노구조를 성장 시키고 온도에 따른 형상 변화와 특성을 평가하였다. ZnO 의 성장온도가 약 $360^{\circ}C$ 일 때, 밀도가 조밀하고 기판에 수직 배열한 균일한 나노막대가 성장되었으며 우수한 결정성, 광학적 특성이 나타남을 SEM, TEM, PL, XRD를 사용하여 확인하였다.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.85-88
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• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.443-447
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• 2003

In this work. using 0.2 GaAs modulation doped FET(MODFET), a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) application. Without LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is lower by 3 dB than conventional ones. A low LO power of -10 dBm was required for the normal DBS operation of the downconverter MMIC. which reduced the power consumption via a removal of LO amplifier on MMIC. It required only a low power consumption of 175 mW, which is lower than 70 percent of conventional ones. The LO leakage power at IF output was suppressed to a lower level than 30 dBm, which removes a bulky LO rejection filter on a board. The fabricated chip, which include a mixer, If amplifiers. LO rejection filter, and active balun, exhibited a small size of $0.84{\times}0.9\textrm{mm}^2$.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.71-79
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• 2021

In this study, we have successfully fabricated the Sn-Ni paste and evaluated the bonding properties for high-temperature endurable EV (Electric Vehicle) power module applications. From evaluating of the micro-structural changes in the TLPS (Transient Liquid Phase Sintering) joints with Sn and Ni contents in the Sn-Ni pastes, a lack of Ni powders and Ni particle agglomerations by Ni surplus were observed in the Sn-20Ni and Sn-50Ni joints (in wt.%), respectively. In contrast, relatively dense microstructures are observed in the Sn-30Ni and Sn-40Ni TLPS joints. From differential scanning calorimetry (DSC) thermal analysis results of the fabricated Sn-Ni paste and TLPS bonded joints, we confirmed that the complete reactions of Sn with Ni to form Ni-Sn intermetallic compounds (IMCs) at bonding temperatures occurred, and there is no remaining Sn in the joints after TLPS bonding. In addition, the interfacial reactions and IMC phase changes of the Sn-30Ni joints under various bonding temperatures were reported, and their mechanical shear strength were investigated. The TLPS bonded joints were mainly composed of residual Ni particles and Ni₃Sn₄ intermetallic phase. The average shear strength tended to increase with increasing bonding temperature. Our results indicated a high shear strength value of approximately 30 MPa at a bonding temperature of 270 ℃ and a bonding time of 30 min.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.119-125
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• 2020

Transition metal dichalcogenides (TMDCs), two-dimensional atomic layered materials with direct bandgap in the range of 1.1-2.1 eV, have attracted a lot of research interest due to their high response to light and capability to build new types of artificial heterostructures. However, the large-area synthesis of high-quality and uniform TMDC films with vertical-stacked heterostructure still remains challenge. In this study, we have developed a metal-organic chemical vapor deposition (MOCVD) system for TMDCs and conducted a systematic study on the growth of single-layer TMDCs and their heterostructures. In particular, using a bubbler-type organometallic compound sources, the concentration and flow rate of each source can be precisely controlled to obtain uniformly single-layered MoS2 and WS2 films over the centimeter scale. In addition, the MoS2/WS2 vertical heterostructure was achieved by growing WS2 film directly on the MoS2 film, as confirmed by electron microscopy, UV-visible spectrophotometer, Raman spectroscopy, and photoluminescence spectroscopy.