• Title/Summary/Keyword: 항복비

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The Behavior of RC Columns on the Variation of Performance Influencing Factor (성능영향인자 변화에 따른 철근 콘크리트 기둥의 거동)

  • Yun, Sung-Hwan;Choi, Min-Choul;Park, Tae-Hyo
    • Proceedings of the Korea Concrete Institute Conference
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    • 2008.04a
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    • pp.281-284
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    • 2008
  • Performance evaluation exposing the performance of structure is affected by the material and structural characteristics. these should be necessary for the analysis about the effect of structure performance. Thus, to evaluate the structural performance affected the material properties and structural characteristics, firstly it is conducted the eigenvalues analysis and non-linear static analysis of the structure, secondly it is analyzed the performance influence factor of the structure. The performance influence factors affecting the performance of structure divided into five classes(strength of concrete, longitudinal and transverse reinforcement, aspect ratio, axial force). From the result of analysis about the change of performance influence factor, the more the strength of concrete is increasing, the more the maximum shear force is increasing and the yield displacement is not changed, the more longitudinal reinforce is increasing, the more yield displacement and the maximum basis shear force is increasing, the more the transverse reinforce is increasing, the change of maximum basis shear force is trivial. The yield displacement of structure is increasing and the maximum basis shear force is decreasing by increasing the aspect ratio, the more the axial force increases, the more yield displacement and maximum basis shear force decease.

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The Experimental Studu on the P-Δ Influence of Weak Beam Unbraced Frames (보항복형 비가새 골조의 PΔ 영향에 관한 실험적 연구)

  • Kim, Hee Dong;Park, Sang Chul;Lee, Myung Jae
    • Journal of Korean Society of Steel Construction
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    • v.13 no.4
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    • pp.363-372
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    • 2001
  • The objective of this study is to evaluate the $P-{\Delta}$ effect in the case of weak beam unbraced frames by experimental approach. To evaluate $P-{\Delta}$ effect, four specimens were tested under monotonic loading condition. The parameters of tests are the stiffness of column and the axial load ratio. The results show that the value of axial load affects frame stability because $P-{\Delta}$ effects promote the yielding of beam. The maximum lateral load increases in proportion to the increment of column stiffness and rotational stiffness of supports, The collapse mechanism of weak beam unbraced frames is stably formed in the condition of low axial load ratio. The $B_2$ factor of limit state design code does not properly consider the $P-{\Delta}$ effect in inelastic region.

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Evaluation of Yield Surfaces of Epoxy Polymers Considering the Influence of Crosslinking Ratio: A Molecular Dynamics Study (분자동역학 해석 기반 가교율에 따른 에폭시 폴리머의 항복 표면 형상 평가)

  • Jinyoung Kim;Hyungbum Park
    • Composites Research
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    • v.36 no.5
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    • pp.369-376
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    • 2023
  • This study focuses on investigating the influence of epoxy polymer crosslinking density, a crucial aspect in composite material matrices, on the yield surface using molecular dynamics simulations. Our approach involved generating epoxy models with diverse crosslinking densities and subjecting them to both uniaxial and multiaxial deformation simulations, accounting for the elasto-plastic deformation behaviors. Through this, we obtained key mechanical parameters including elastic modulus, yield point, and strain hardening coefficient, all correlated with crosslinking conversion ratios. A particularly noteworthy finding is the rapid expansion of the yield surface in the biaxial compression region with increasing crosslinking ratios, compared to the uniaxial tensile region. This unique behavior led to observable yield surface variations, indicating a significant pressure-dependent relationship of the yield surface considering plastic strain and crosslinking conversion ratio. These results contribute to a deeper understanding of the complex interplay between crosslinking density and plastic mechanical response, especially in the aspect of multiaxial deformation behaviors.

Stability of Steel Frames with Weak Column-Strong Beam Considering P-Δ effect (P-Δ 효과를 고려한 기둥항복형 강구조 골조의 안정성)

  • Kim, Hee Dong;Lee, Myung Jae
    • Journal of Korean Society of Steel Construction
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    • v.15 no.4 s.65
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    • pp.457-466
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    • 2003
  • This study aimed to evaluate the stability of steel frames with weak column-strong beam and consider P-effect using the experimental approach. Towards this end, three specimens were tested under monotonic loading condition. Parameters of tests includes the stiffness of the column and the axial load ratio. Result showed that reduction in column stiffness promoted P- effect, which considerably influenced the frame's stability.

Calculation of Optimum Damping Ratio of Viscous Dampers Using Capacity Spectrum Method (능력스펙트럼법을 이용한 점성 감쇠기의 적정 감쇠비 산정)

  • 김진구;최현훈
    • Journal of the Earthquake Engineering Society of Korea
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    • v.5 no.1
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    • pp.45-52
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    • 2001
  • 에너지 소산장치가 설치된 건무의 비선형 시간이력해석은 복잡하고 많은 시간이 소모된다. 본 연구에서는 비선형 정적해석법인 능력 스펙트럼을 이용하여 구조물의 주어긴 거동 한계를 만족할 수 있는 감쇠기의 양을 산정하는 방법에 관하여 연구하였다. 먼저 능력스펙트럼법을 이용하여 건물의 비선형 정적응답을 구하고 건물의 응답과 목표변위의 차이를 이용하여 유효감쇠비를 구하고 이러한 유효 감쇠비를 이용하여 필용한 점성 감쇠기의 양을 구하였다. 본 연구에서는 단자 유도계에서 건물의 주기, 요구되는 탄성강도에 대한 항복강도의 비, 항복 후 강성비 등을 변수로 하여 연구를 수행하였다. 제안된 방법에 따라 설계된 점성 감쇠기를 설치한 예제 구조물의 시간이력 해석에 의한 최대 응답은 설계의 초기단계에서 사용한 목표변위와 잘 일치하였다.

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Sensitivity Analyses on Breakdown Voltage of Cylindrical PN Junctions to the Doping Concentrations (원통형 PN접합의 항복전압의 농도에 대한 민감도)

  • Seo, Hyun-Seok;Jo, Jung-Yol;Ahn, Hee-Tae;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.59-60
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    • 2006
  • 원통형 PN접합의 Baliga의 해석적인 항복전압에 대한 근사식을 유도하였다. 근사식은 접합길이, $r_j$와 공핍층 깊이, $W_{pp}$의 비 ($r_i/W_{pp}$)가 0.1보다 작은 경우 Baliga식과 잘 일치하였다. 농도에 대한 원통형 접합의 항복전압의 민감도를 유도하였으며, 근사식을 사용한 경우가 Baliga식의 경우보다 민감도식이 더 간단하기 때문에, 민감도를 고려한 소자 설계 시 활용될 수 있으리라 기대된다. 민감도 식을 이용하여 설계한 결과 항복전압의 편차가 10% 이내로 제어하기 위해서는 도핑농도가 $10^{15}cm^{-3}$이고 접합깊이가 $5{\mu}m$ 인 원통형 접합인 경우 농도 편차가 12.8%이내 이어야한다.

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Relation of Breakdown Voltage and Channel Doping Concentration of Sub-10 nm Double Gate MOSFET (10 nm 이하 DGMOSFET의 항복전압과 채널도핑농도의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.6
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    • pp.1069-1074
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    • 2017
  • Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

Breakdown Voltage for Doping Concentration of Sub-10 nm Double Gate MOSFET (10 nm 이하 DGMOSFET의 도핑농도에 따른 항복전압)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.05a
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    • pp.688-690
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    • 2017
  • Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The SCE occurred in on-state transistor raises limitation of operation range of transistor. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

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