• Journal of Life Science
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• v.25 no.4
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• pp.416-424
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• 2015

Pinosylvin is a stilbenoid found in the Pinus species. Pinosylvin at ~pM to ~nM concentrations induces cell proliferation, cell migration and anti-inflammatory activity in endothelial cells. However, it was recently reported that pinosylvin at high concentrations (50 to 100 μM) induces cell death in bovine aortic endothelial cells. In this study, we conducted a series of experiments to discover how pinosylvin at a high concentration (50 μM) induces endothelial cell death. Pinosylvin at the high concentration was shown to induce endothelial cell apoptosis through enhancing caspase-3 activity, flip-flop of phosphatidyl serine, and nuclear fragmentation. We found that pinosylvin at the high concentration additively increased caspase-3 activity enhanced by serum-starvation or treatment with 100 μM etoposide. We also determined that pinosylvin at the high concentration promoted activations of c-Jun N-terminal kinase (JNK) and endothelial nitric oxide synthetase (eNOS). We further ran a series of experiments to find out which signaling molecule plays a critical role in the pinosylvin-induced apoptosis. We finally found that SP-600125, a JNK inhibitor, had an inhibitory effect on the pinosylvin-induced endothelial cell death, but L-NAME, an eNOS inhibitor, had no effect. These data indicate that JNK is involved in the pinosylvin-induced apoptosis. Collectively, pinosylvin at high doses induces cell apoptosis via JNK activation.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• v.y2005m4
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• pp.16-19
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• 2005

The basic research on KM(Kick Motor) for space launch vehicle was carried out. KM whick will be used as 2nd stage solid rocket motor. in Korean Satellite Launch Vehicle(I) has been developing. KM is a solid rocket motor using composite propellant based on HTPB and is composed of composite motor case and submerged nozzle. To develop KM rocket motor satisfing a given set of requirement, firstly the full-scale KM was designed, then sub-scale motor reduced about $50\%$ were manufactured and tested.

• Journal of the Korean Society of Propulsion Engineers
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• v.25 no.2
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• pp.55-65
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• 2021

In this study, the design criteria is presented for Finocyl grain, which is easy to generate neutral thrust when designing solid rocket motors. For this purpose, an automated program using drafting method was developed for burn-back analysis and its accuracy was validated. Using this developed program, burn-back analysis was performed with various configuration parameters of Finocyl grain, and the tendency and sensitivity analysis on burning characteristics were performed. Based on this analysis, the design criteria were presented to generate the neutral burning surface area trace for a Finocyl grain.

• Journal of Biosystems Engineering
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• v.28 no.4
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• pp.325-334
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• 2003

Pinosylvin, a stilbenoid phytoalexin, is a health ingredient to be extracted from pine leaves. In this study, ultrasonication-assisted extraction process for manufacturing extracts with high content of pinosylvin from pine leaves was investigated. As process and system variables, ultrasonic power, sonication time and solvent ratio were selected. According to the experimental results, the effective yield of pinosylvin increased with the increase of ultrasonic power and sonication time and the decrease of solvent ratio. When the ultrasonic power of 2400 W/L was added to the solution of pulverized pine leaves of 8 g per 1 L of a solvent for 10 minutes, yield of extracts and purity, effective yield and concentration ratio of pinosylvin were 0.3166 g/g, 0.7247 mg/g, 0.2294 mg/g and 23.0, respectively.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.556-561
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• 2001

We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.