• Proceedings of the Korea Multimedia Society Conference
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• 2002.05c
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• pp.44-48
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• 2002

본 논문에서는 한국형 디지털 서명 표준인 KCDSA에서 사용할 목적으로 개발된 국내 해쉬 함수 표준인 HAS-160 알고리즘을 VLSI 설계하였다. 하나의 단계연산을 하나의 클럭에 동작하고 단계연산의 핵심이 되는 4개의 직렬 2/sup 3/ 모듈러 가산기를 CSA(Carry Save Adder)로 구현하여 캐리 전파시간을 최소로 하고 HAS-160 해쉬 알고리즘의 특징인 메시지 추가생성을 사전에 계산하여 지연시간을 줄이는 설계를 하였다. 설계된 해쉬 프로세서를 0.25 urn CMOS 스탠다드 셀 라이브러리에서 합성한 결과 총 게이트 수는 약 21,000개이고 최대 지연 시간은 5.71 ns로 최대 동작주파수 약 175 MHz서 약 1,093 Mbps의 성능을 얻을 수 있었다.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.255-262
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• 2002

Human retina is able to detect the edge of an object effectively. We designed a CMOS vision chip by modeling cells of the retina as hardwares involved in edge detection. There are several fluctuation factors which affect characteristics of MOSFETs during CMOS fabrication process and this effect appears as output offset of the vision chip which is composed of pixel arrays and readout circuits. The vision chip detecting edge information from input image is used for input stage of other systems. Therefore, the output offset of a vision chip determine the efficiency of the entire performance of a system. In order to eliminate the offset at the output stage, we designed a vision chip by using CDS(Correlated Double Sampling) technique. Using standard CMOS process, it is possible to integrate with other circuits. Having reliable output characteristics, this chip can be used at the input stage for many applications, like targe tracking system, fingerprint recognition system, human-friendly robot system and etc.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.5 s.311
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• pp.28-35
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• 2006

This paper presents a new 3.3-1 V synchronous buck DC/DC converter that employs CMOS operational transconductance amplifiers (OTAs) as circuit-building blocks. An error amplifier OTA in a PWM circuit is compensated for to improve temperature stability. The temperature coefficient of the transconductance gain of the compensated OTA is less than $150\;ppm/^{\circ}C\;over\;0-100^{\circ}C$. The HSPICE simulation results of the $0.3{\mu}m$ standard CMOS technology show that the efficiency of the proposed converter is as high as 80% in the load current range of 40-125 mA. These results show that the proposed converter is adequate for use in battery-operated systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.128-133
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• 2006

This paper describes a high speed interface circuit using redundant multi-valued logic for high speed communication ICs. This circuit is composed of encoding circuit that serial binary data are received and converted into parallel redundant multi-valued data, and decoding circuit that converts redundant multi-valued data to parallel binary data. Because of the multi-valued data conversion, this circuit makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, the proposed 1:4 DEMUX (demultiplexer, serial-parallel converter), was designed using a 0.35um standard CMOS technology. Proposed DEMUX is achieved an operating speed of 4.5Gb/s with a supply voltage of 3.3V and with power consumption of 53mW. The operating speed of this circuit is limited by the maximum frequency which the 0.35um process has. Therefore, this circuit is to achieve CMOS communication ICs with an operating speed greater than 10Gb/s in submicron process of high operating frequency.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.91-100
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• 2001

A $8{\times}8$ foveated (log-polar) retina chip for edge detection has been designed and fabricated using CMOS technology. Retina chip performs photo-input sensing, edge extraction and motion detection and we focused edge extraction. The pixel distribution follows the log-polar transform having more resolution in the center than in the periphery and can reduce image information selectively. This kind of structure has been already employed in simple image sensors for normal cameras, but never in edge detection retina chip. A scaling mechanism is needed due to the different pixel size from circumference to circumference. A mechanism for current scaling in this research is channel width scaling of MOS transistor. The designed chip has been fabricated using standard $1.5{\mu}m$ single-poly double-metal CMOS technology.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.363-371
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• 2013

This paper describes a multi-standard LDPC decoder which supports 19 block lengths(576~2304) and 6 code rates(1/2, 2/3A, 2/3B, 3/4A, 3/4B, 5/6) of IEEE 802.16e mobile WiMAX standard and 3 block lengths(648, 1296, 1944) and 4 code rates(1/2, 2/3, 3/4, 5/6) of IEEE 802.11n WLAN standard. To minimize hardware complexity, it adopts a block-serial (partially parallel) architecture based on the layered decoding scheme. A DFU(decoding function unit) based on sign-magnitude arithmetic is used for hardware reduction. The designed LDPC decoder is verified by FPGA implementation, and synthesized with a 0.13-${\mu}m$ CMOS cell library. It has 312,000 gates and 70,000 bits RAM. The estimated throughput is about 79~210 Mbps at 100 MHz@1.8v.