• Electrical & Electronic Materials
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• v.2 no.1
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• pp.1-13
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• 1989

Langmuir-Boldgett(LB)법에 의해서 두께 1층당 약 4.angs.의 폴리이미드 LB막을 제작된 폴리이미드 LB막을 양전극사이에 sandwich시킨 Al/Al$_{2}$ $O_{3}$ /폴리이미드 LB막/Al(Au)구조의 소자를 이용하여 전기적 특성을 조사하였다. 전기저항이 대단히 큰 폴리이미드 LB막과 전기저항이 작은 $Al_{2}$ $O_{3}$막과의 상호작용에 의해 폴리이미드 LB막의 파괴전계는 약 1*$10^{8}$V/cm이었으며 터널전류는 이론값에 비하여 매우 작은 전류의 값을 나타내었다. 이와같은 현상은 전압의 대부분이 폴리이미드 LB막에 만이 인가되며 터널전류는 $Al_{2}$ $O_{3}$막에 의해 제한되기 때문이다.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.222-224
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• 1994

This paper describes the optimum conditions for depositing PAAS(polyamic acid alkylamine salts) Langmuir-Blodgett (LB) films, which are a precursor of polyimide LB films. The optimum conditions were studied by $\pi$-A isotherma with a varication of temperatures, spreading amounts or solution, compression speeds, and etc. Transfer ratio was also measured depending on the type of LB films.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.421-428
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• 2012

We investigated an electrochemical properties for Langmuir-Blodgett (LB) nano-films of polyimide and phospholipid mixture. LB films of polyamic acid and phospholipid monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $KClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100, 150, 200 and 250 mV/s, respectively. As a result, monolayer LB films of polyamic acid and phospholipid mixture was appeared on irreversible process caused by the reduction current from the cyclic voltammogram. Diffusion coefficient (D) effect in the polyamic acid and phospholipid mixture was used in the LAPC with LLPC fewer than the diffusion coefficient values.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.