• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2410-2416
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• 2016

Recently, most countries in the world have pursued a denuclearization. So it has been of interest to increase to Nuclear weapon in such as North Korea's continued nuclear test. Pulsed gamma rays produced in the nuclear explosion and the space environment can give the big damage to the electronic device in a very short period of time. To confirm the extent of damage of these electronic devices, pulsed gamma irradiation facility that can occur in nuclear weapon or space environment are required. In this paper, we implemented the pulsed gamma-ray detection module and analyzed output of the irradiation test. We have experimented using an electron beam accelerator research facilities in Pohang Accelerator similar conditions to equip and Nuclear weapon. As a result, we confirmed that the pulsed gamma rays emitted by the gamma radiation and electron beam conversion device. The results of this paper will contribute to improve the reliability and accuracy of studies for utilizing pulsed gamma rays.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.