• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.39-40
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.71-73
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.69-70
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.221-221
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• 2016

최근에 희토류 이온이 도핑된 텅스텐산(tungstates) 형광체에 대한 연구가 재조명되고 있다. 텅스텐산 형광체는 우수한 광학적 특성과 높은 화학적 안정성을 나타내기 때문에 X-선 증강 스크린(X-ray intensifying screens), 광고판용 형광 램프, 발광 다이오드, 레이저, 섬광체(scintillator), 전계방출 디스플레이 영역에 그 응용성을 넓히고 있다. 본 연구는 모체 결정 MgWO4에 희토류 이온인 Tb3+와 융제(flux)의 몰 비를 변화 시켜 고상반응법을 사용하여 합성을 하였다. 합성한 형광체를 여기 파장 281 nm로 제어하였을 시, 545 nm의 녹색 발광 스펙트럼을 관찰 하였다. Tb3+이온이 0.10 mol일 때, 가장 발광 세기가 컸으며, 몰비가 증가 할수록 발광의 세기는 점차 커지다가 0.12 mol에서 작아졌다. 주 발광 신호 이외에도 489 nm, 586 nm, 621 nm에서 상대적으로 작은 발광 스펙트럼을 보였다. XRD를 통해 분석한 결정구조는 단사정계임을 알 수 있었으며 주 피크는 $23.9^{\circ}$에서 발생 하였고 이는 (110)면에서 발생한 회절 신호이다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.403-405
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• 2009

RF-스퍼터링법을 사용하여 메탄올 산화반응을 위해 박막형 전극을 제조하였다. 전극은 텅스텐 탄화물(WC)과 텅스텐 산화물($WO_3$), 그리고 백금(Pt) 타겟을 이용하였으며 그 구조적 특성과 전기화학적 특성을 TEM(Transmission electron microscopy와 CV(Cyclic Voltametry)를 통하여 촉매적 활성을 측정해 보았다. 같은 양의 백금과의 활성을 비교하고 활성을 확인하였다.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1296-1301
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• 2003

The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Proceedings of the Korea Contents Association Conference
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• 2014.11a
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• pp.431-432
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• 2014

본 연구는 핵의학과에서 사용하는 $^{99m}Tc$에서 방출되는 광자에너지에 대하여 거리에 따른 인체에 대한 선량당량을 평가하였다. 그 결과 주사기 차폐기구 유무에 따라 선량당량이 차이를 보였으며, 심부선량은 차폐를 하지 않은 경우 평균 $216.026{\mu}Gy/h$, 1 mm 텅스텐 차폐를 하였을 경우 평균 $4.240{\mu}Gy/h$, 2 mm 텅스텐의 경우 평균 0.124 uGy/h의 선량을 보였다. 이에 따라 주사기 차폐기구를 필수적으로 사용하여야 하며 종사자 개개인의 피폭 관리에 항상 유념하여야 한다. 또한 본 연구결과를 바탕으로 종사자의 피폭 감소 방안에 대한 연구가 지속적으로 이루어 져야할 것으로 생각된다.

• Journal of Powder Materials
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• v.1 no.1
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• pp.52-59
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• 1994

Since the coefficient of thermal expansion (CTE) of matrix phase is larger about 4 times than that of W particle in tungsten heavy alloy, the thermal stresses due to the CTE difference between the two phases are induced in the alloy during heating and cooling processes. In the present study, a series of W heavy alloy containing various W particle volumes of 0 to 90% is made to investigate the residual stress taking place during cooling process. The CTE and residual stress of the series of alloy are measured by dilatometer and X-ray diffractometer. The residual stress of W particle is in compressive stress irrespective of W particle vol% and tends to increase with decreasing W particle vol% while that of the matrix phase is in tensile stress. The measured residual stress of W particle is about a third of calculated thermal stress. The influence of W particle vol% on the residual stress of W heavy alloy is discussed in terms of the deformation behaviors of W particle and matrix phase.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.206-209
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• 2002

The fixed abrasive pad(FAP) has been introduced in chemical mechanical polishing(CMP) field recently. In comparison with the general CMP which uses the slurry including abrasives, FAP takes advantage of planarity. resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of $Al_2$O$_3$-FAP using hydrophilic polymers with swelling characteristic in water and explains the self.texturing phenomenon. It also focuses on the chemical effects on tungsten film and the FAP is evaluated on the removal rate as a function of chemicals such as oxidizer, catalyst, and acid. The removal rate is achieved up to 1000A1min as about 70 percents of the general one. In the future. the research has a plan of the advanced FAP and chemicals in tungsten CMP considering micro-scratch, life-time, and within wafer non-uniformity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.245-249
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• 2002

Tungsten carbide microshaft is used as various micro-tools in MEMS because it has high hardness and good rigidity. In this study, experiments were performed to produce tungsten carbide microshaft using electrochemical machining. $H_2SO_4$solution was used as electrolyte because it can dissolve tungsten and cobalt simultaneously. Optimal electrolyte concentration and machining voltage satisfying uniform shape and large MRR of workpiece were found. For one-step machining, the immersion depth over 1 mm was selected for avoidance of concentration of electric charge at the tip of the microshaft. The limit diameter with good straightness was shown and an empirical formula for WC-microshaft machining was suggested. By controlling the various machining parameters, a straight microshaft with 30 $\mu\textrm{m}$ diameter, over 1 mm length and under 0.5$^{\circ}$ taper angle was obtained.