• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.36-42
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• 1999

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $\mu\textrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$\mu\textrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.156.2-156
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Ceramist
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• v.10 no.4
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• pp.18-22
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• 2007

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.94.4-94.4
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• 2004

• Journal of the Korean Ceramic Society
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• v.41 no.7
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• pp.518-527
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• 2004

In this study, SiC whiskers were grown in porous alumina substrate in order to enhance the filtering efficiency, performance, and durability by controlling pore morphology. This experiment was performed by Chemical Vapor Infiltration (CVI) in order to obtain the whiskers on the inside of pores as well as on the surface of porous the A1$_2$O$_3$ substrate. The deposition behavior was changed remarkably with the deposition position, temperature, and input gas ratio. First, the mean diameter of whisker was decreased as the position of observation moved into the inside of substrate due to the reactant gas depletion effect'. Second, the deposition temperature caused the changes of the deposition type such as debris, whiskers and films and the change in morphology affect the various properties. When SiC films were deposited. the gas permeability and the specific surface area decreased. However, the whisker showed the opposite result. The whiskers increase not only the specific surface area and minimizing pressure drop but also mechanical strength. Therefore it is expected that the porous alumina body which deposited the SiC whisker is the promising material for the filter trapping the particles.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.212.1-212
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.50.1-50
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• 2003

• Composites Research
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• v.30 no.2
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• pp.108-115
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• 2017

Among several fabrication processes of $SiC_f/SiC$ composites, the chemical vapor infiltration (CVI) process has attractive advantages in manufacturing complex net-or near-net-shape components at relatively low temperatures, easily controlling the microstructure of the matrix and obtaining the highest SiC purity level. However, it has disadvantages in that the ratio of residual pores in matrix is higher than other processes and processing time is relatively long. To reduce the residual porosity, the whisker-growing-assisted CVI process, which is composed of whisker growth and matrix filling steps has been developed. The whiskers grown before matrix filling may serve to divide the large natural pores between the fibers or bundles so that the matrix can be effectively filled into the finely divided pores. In this paper, the fundamentals of the CVI process for preparation of $SiC_f/SiC$ composites and some experimental results prepared by CVI and whisker-growing-assisted CVI processes are briefly introduced.