• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.73-79
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• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.27-33
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• 2001

The growth characteristics of 4-fold grain which was appeared in KLN deposition on $Pt/Ti/SiO_2/Si(100)$ substrate was studied by varying process variables. Substrate temperature, sputtering pressure, rf power were selected as process variables, and experiment was carried out near optimum fabrication condition. When using K and Li enriched target, the optimum fabrication conditions were substrate temperature of $600^{\circ}C$, sputtering pressure of 150mTorr, rf power of 100 W and its surface morphology is sensitively varied by small deposition condition changes. KLN is composed of elements which have large difference of boiling point. And it is difficult to fabricate thin film at high temperature and high vacuum deposition condition. Furthermore the phenomenon during deposition process can not be explained by using Thorton's model which explains the relation between thin film structure and melting point of thin film materials. These phenomenon can be explained using boiling point of elements which consist of thin film material.

• Journal of radiological science and technology
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• v.39 no.4
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• pp.571-575
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• 2016

Monte Carlo simulations are widely used as the most accurate technique for dose calculation in radiation therapy. In this paper, the GATE6(Geant4 Application for Tomographic Emission ver.6) code was employed to calculate the dosimetric performance of the photon beams from a linear accelerator(LINAC). The treatment head of a Varian 21EX Clinac was modeled including the major geometric structures within the beam path such as a target, a primary collimator, a flattening filter, a ion chamber, and jaws. The 6 MV photon spectra were characterized in a standard $10{\times}10cm^2$ field at 100 cm source-to-surface distance(SSD) and subsequent dose estimations were made in a water phantom. The measurements of percentage depth dose and dose profiles were performed with 3D water phantom and the simulated data was compared to measured reference data. The simulated results agreed very well with the measured data. It has been found that the GATE6 code is an effective tool for dose optimization in radiotherapy applications.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.30-36
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• 2000

SmCo films were deposited on Si(100) substrate by a Nd-YAG pulsed laser ablation of the targets of Sm$\_$100-x/Co$\_$x/ (73$\leq$x$\leq$93) at the substrate temperature of 600∼700$\^{C}$ and the laser beam energy density of Q switching mode or fixed Q mode. The magnetic properties of the films obtained from the Q switching mode exhibited a 4 $\pi$ Ms of 5200∼7700 Gauss, iHc of 190-250 Oe, and 4$\pi$M$\_$r//4$\pi$M$\_$s/ of 0.4∼0.74, respectively, while the fixed Q mode gave the magnetic properties of corresponding films of a 4$\pi$M$\_$r//4$\pi$M$\_$s/ = 0.32∼0.91 and iHc of 430-6290 Oe, respectively. The fixed Q mode gave the better magnetic properties of the SmCo films which seems to be due to a formation of magnetically hard minor phases in droplet of Sm-rich intermetallics. However, the resultant rough surface of the SmCo films is a problem to be solved by a continued study.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.455-455
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• 2010

차세대 디스플레이로 널리 알려져 있는 플렉서블 디스플레이는 휴대하기 쉽고, 깨지지 않으며, 변형이 자유로워 현재 우리 사회에 크게 주목받고 있다. 플렉서블 디스플레이의 구현을 위해서는 기존의 유리 기반 디스플레이 소자 기술에 더하여 플렉서블 기판소재에 적용 가능한 투명전도막 기술의 확립이 필요하다. 디스플레이 산업에서 주로 사용되는 투명전도막은 ITO (indium tin oxide) 및 IZO (indium zinc oxide)와 같은 투명전도성 산화물 박막 (TCO, transparent conducting oxide)이다. 그런데 플라스틱 기판이 굽힘 환경에 놓이게 되면 그 위에 증착된 산화물 박막이 쉽게 파손될 수 있다. 따라서 플렉서블 디스플레이 기술에 있어서 변형에 따른 TCO 박막의 파괴 거동에 대한 연구가 필수적이다. 본 연구에서는 PET (polyethylene terephthalate) 기판 상에 증착된 IZO 박막의 반복 굽힘 시 계면구조 변화에 따른 파괴거동을 조사하였다. 플라스틱 기판의 사용을 위해서는 산소 및 수분의 투과 방지막이 필요하며 본 연구에서는 투과 방지막 (또는 보호막)으로서 $SiO_x$ 박막을 적용하였다. IZO 박막은 $In_2O_3$ - 10 wt% ZnO 타겟을 사용하여 RF magnetron sputtering법으로 $100^{\circ}C$ 미만에서 저온 증착하였다. 보호막으로 사용되는 $SiO_x$ 박막은 HMDSO (hexamethyldisiloxane)와 Ar 및 $O_2$ 혼합기체를 이용하는 PECVD 방법으로 합성하였다. 변형에 따른 TCO 박막의 파괴 거동을 조사하기 위하여 반복 굽힘 시험 (cyclic- bending test)을 실시하였다. 반복 굽힘 시험 중 실시간으로 IZO 박막의 전기저항 변화를 측정하여 박막의 파괴 거동을 모니터링 하였다. 시편 A (135 nm-thick IZO/PET), B (135 nm-thick IZO/ 90 nm-thick $SiO_x$/PET), C (135nm-thick IZO/ 300 nm-thick $SiO_x$/PET)에 대하여 곡지름 35mm, 1000회 반복 굽힘을 실시하여 변형 중의 전기저항 변화를 조사하였다. 그리고 굽힘 시험 완료 후, FE-SEM을 이용한 시편 표면형상 관찰을 통하여 균열생성 정도를 관찰하였다. 반복 굽힘 시험 결과, A 와 C 시편의 경우, 각각 반복 굽힘 20회, 550회에서 급격한 전기저항의 증가가 관찰되었다. 그러나 B 시편의 경우, 1000회 반복 굽힘 후에도 전기저항의 변화는 나타나지 않았다. 이와 같이 반복 굽힘에 의한 IZO 박막의 파괴 거동 변화는 IZO 박막과 기판의 계면구조변화에 기인한 것으로 해석된다. IZO 박막과 기판의 계면에 $SiO_x$ 층을 삽입함으로써 계면 접합강도가 향상되었을 것으로 추측된다. 따라서 변형에 대한 파괴 저항 특성이 우수한 투명전도성 산화물 박막의 형성을 위해서는 적절한 계면구조 제어를 통한 계면 접합 특성의 향상이 필요하다.

• Korean Chemical Engineering Research
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• v.62 no.1
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• pp.13-18
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• 2024

To develop flexible electrode materials for wearable devices, we investigated the electrochemical characteristics of carbon fibers tow according to pretreatment. And an electrochemical non-enzymatic sensor was fabricated using glucose as a target. The carbon fibers tow was pretreated through desizing and activation processes, and activation was performed in two ways: chemical oxidation and electrochemical oxidation. Surface morphology of carbon fibers tow samples was observed by SEM and their electrochemical characteristics and sensing performance were investigated by cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry. Carbon fibers tow samples showed improved electrochemical properties such as reduced R_et, ΔE_p, and increased I_p through pretreatment. And similar electrochemical properties were obtained with both activation methods. We selected electrochemically activated carbon fibers tow as the final electrode material for application of electrochemical sensor. The non-enzymatic glucose sensor based on this electrode has an enhanced sensitivity of 0.744 A/mM (in a linear range of 0.09899~3.75423 mM) and 0.330 mA/mM (3.75423~50 mM), respectively. Through this study, the possibility of using carbon fibers tow was confirmed as an electrode material. It is expected to be used as basic research for development of high-performance flexible electrode materials.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of radiological science and technology
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• v.35 no.4
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• pp.335-343
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• 2012

Intensity-modulated radiotherapy(IMRT) have the ability to provide better dose conformity and sparing of critical normal tissues than three-dimensional radiotherapy(3DCRT). Especially, with the benefit of health insurance in 2011, its use now increasingly in many modern radiotherapy departments. Also the use of linear accelerator with high-energy photon beams over 10 MV is increasing. As is well known, these linacs have the capacity to produce photonueutrons due to photonuclear reactions in materials with a large atomic number such as the target, flattening filters, collimators, and multi-leaf collimators(MLC). MLC-based IMRT treatments increase the monitor units and the probability of production of photoneutrons from photon-induced nuclear reactions. The purpose of this study is to quantitatively evaluate the dose of photoneutrons produced from 3DCRT and IMRT technique for Rando phantom in cervical cancer. We performed the treatment plans with 3DCRT and IMRT technique using Rando phantom for treatment of cervical cancer. An Rando phantom placed on the couch in the supine position was irradiated using 15 MV photon beams. Optically stimulated luminescence dosimeters(OSLD) were attached to 4 different locations (abdomen, chest, head and neck, eyes) and from center of field size and measured 5 times each of locations. Measured neutron dose from IMRT technique increased by 9.0, 8.6, 8.8, and 14 times than 3DCRT technique for abdomen, chest, head and neck, and eyes, respectively. When using IMRT with 15 MV photonbeams, the photoneutrons contributed a significant portion on out-of-field. It is difficult to prevent high energy photon beams to produce the phtoneutrons due to physical properties, if necessary, It is difficult to prevent high energy photon beams to produce the phtoneutrons due to physical properties, if necessary, it is need to provide the additional safe shielding on a linear accelerator and should therefore reduce the out-of-field dose.