• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.253-259
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• 2016

This paper introduces a new variable power divider circuit with an arbitrary power division ratio ranging from $1:{\infty}$ to ${\infty}:1$. The proposed power divider circuit consists of one branch-line coupler to be a good input matching characteristic, two variable phase shifters with 90-degree phase variation to be connected two output paths of the branch-line coupler, and one ring-hybrid coupler to combine output signals of two variable phase shifter. The power division ratio between the two output ports of the proposed power divider can be easily controlled by the phase variation of the two phase shifter. The proposed power divider circuit fabricates on laminated RF-35 (h = 20 mil, er=3.5; Taconic) with a center frequency of 2 GHz. The power division ratio of the fabricated prototype varies from about 1:1000 to 5000000:1, with an input reflection characteristic(S11) of below -20 dB, an insertion loss of about -1.0 dB, and an isolation characteristic of below -17 dB between two output ports in the range 1.9-2.1 GHz.

• Journal of Advanced Navigation Technology
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• v.22 no.1
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• pp.27-30
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• 2018

In this study, a 40 GHz band pass filter(BPF) employing a hair-pin structure has been designed, fabricated, and characterized for millimeter-wave wireless communication applications. Using the 3 dimensional(3-D) electromagnetic(EM) tool and design equations of the hairpin BPF, the BPF was desgned on the 5 mil-thick Duroid substrate(RT5880) with a relative dielectric constant (${\varepsilon}_r$) of 2.2. The tapping point (t) of the U-shape resonator in the input and output port has been determined using extracted an external Q-factor ($Q_e$). The coupling coefficients between the other resonators are calculated by adjusting the physical dimensions for the desired response of the BPF. The fabricated BPF was characterized using probing method on a probe station. Its measured center frequency(fc) and fractional BW are 41.6 GHz and 7.43 %, respectively. The measured return loss is below -10 dB at the pass band and the insertion loss is 3.87 dB. The fabricated BPF is as small as $9.1{\times}2.8mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.387-392
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• 2014

In this paper, the broadband antenna design, which can be applied to USB Dongle, supporting Wibro(2.3~2.4 GHz), Wi-Fi(2.4~2.5 GHz) and LTE7(2.5~2.7 GHz) is proposed technique. The proposed antenna was designed similar to PIFA type antennas. Reactive elements were used to control the input impedance and wideband characteristics were achieved by controlling coupling between the feed structure and the radiator. As a result, the antenna printed on FR-4 PCB(${\epsilon}_r$ =4.4, tan ${\delta}$=0.02) occupying an area of $15{\times}5mm^2$ was able to achieve bandwidth of 1 GHz from 2.1 to 3.1 GHz under VSWR=2. Measured return loss characteristics, bandwidth and radiation patterns were in good agreement with the simulated results.

• Journal of the Korean Geotechnical Society
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• v.27 no.7
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• pp.69-79
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• 2011

Laboratory tests are generally used to determine the input parameters for the selected constitutive models controlling various stress and drainage conditions, but have disadvantages in that the tests are performed on the samples obtained from the bore hole which are prone to be disturbed by various factors such as the tube penetrations, sample preparations and storage. To overcome these disadvantages, it is necessary to understand the effect of disturbance on the stiffness of the sample, especially the normally consolidated clays which are generally considered as soft clays. Therefore, in this study triaxial tests are performed on the normally consolidated kaolinite to evaluate the sample disturbance effects on the stiffness and to determine the field representative input parameters. The stress path results show that the shear and coupling modulus degradation patterns with strain are affected seriously by the disturbance. However, the strengths of the normally consolidated kaolinite are little influenced by the disturbance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.