• Journal of Satellite, Information and Communications
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• v.7 no.2
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• pp.18-24
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• 2012

High current behaviors of the extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOSFET) for electrostatic discharge (ESD) protection of high voltage operating LDI (LCD Driver IC) chip are analyzed. Both the transmission line pulse (TLP) data and the thermal incorporated 2-dimensional simulation analysis demonstrate a characteristic double snapback phenomenon after triggering of biploar junction transistor (BJT) operation. Also, background doping concentration (BDC) is proven to be a critical factor to affect the high current behavior of the EDNMOS devices. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor ESD protection performance and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both the good ESD protection performance and the latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC.

• Journal of Satellite, Information and Communications
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• v.9 no.4
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• pp.63-68
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• 2014

Electrostatic Discharge(ESD) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of Practical Engineering Education
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• v.6 no.2
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• pp.91-97
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• 2014

Education equipment for field programmable gate array (FPGA) based multimedia player design is introduced. Using the education equipment, an example of hardware design for color detection and augment reality (AR) game is described, and an example of syllabus for "Digital system design using FPGA" course is introduced. Using the education equipment, students can develop the ability to design some hardware, and to train the ability for the creative capstone design through conceptual, partial-level, and detail designs. By controlling audio codec, system-on-chip (SOC) design skills combining a NIOS II soft microprocessor and digital hardware in one FPGA chip are improved. The ability to apply wireless communication and LabView to FPGA-based digital design is also increased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1890-1896
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• 2008

In this paper, the Si vertical Hall devices ale fabricated by using standard bipolar process and investigated in terms of the opeating and noise properties. The sensitivity of device with P+ isolation dam(type B) has been increased up to about 1.2 times compared to that device without the dam also noise has been increased. With the condition of f=I[KHz], band-width 1[Hz], the resolution of magnetic-field detection were about $0.97[{\mu}T]$/ type B and $1.25[{\mu}T]$/ type A, respectively, thus we must consider correlation the low noise or good resolution and high sensitivity in the situation for device geometry design or even for the materials.

• Journal of IKEEE
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• v.23 no.3
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• pp.988-993
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• 2019

Over the past decades, the semiconductor industry has continuously scaled down the size of semiconductor devices to increase those performance and to integrate them at higher density on the chip. However, facing the reduction of gate control, higher leakage current, and short channel effect, there is a growing interest in next-generation semiconductors which can overcome these problems. In this paper, we discuss digital circuit design techniques using CNTFET(Carbon NanuTube Field Effect Transistor), which are attracting attention as candidates for the next generation of semiconductors. Since the structure of CNTFETs are clearly different from the structure of the structure of conventional MOSFETs, we will discuss how to utilize existing digital circuit methodology when designing digital circuits using the CNTFETs, and then simulate the performance differences between the two devices.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.10 no.4
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• pp.3-11
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• 2000

In this paper, we design modular multiplication systolic array and exponentiation processor having n bits message black. This processor uses Montgomery algorithm and LR binary square and multiply algorithm. This processor consists of 3 divisions, which are control unit that controls computation sequence, 5 shift registers that save input and output values, and modular exponentiation unit. To verify the designed exponetion processor, we model and simulate it using VHDL and MAX+PLUS II. Consider a message block length of n=512, the time needed for encrypting or decrypting such a block is 59.5ms. This modular exponentiation unit is used to RSA cryptosystem.

• IEMEK Journal of Embedded Systems and Applications
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• v.17 no.6
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• pp.375-382
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• 2022

This paper proposes a multi-core cooperative computing structure considering the heterogeneous features of automotive embedded on-chip software. The automotive embedded software has the heterogeneous execution flow properties for various hardware drives. Software developed with a homogeneous execution flow without considering these properties will incur inefficient overhead due to core latency and load. The proposed method was evaluated on an target board on which a automotive MCU (micro-controller unit) with built-in multi-cores was mounted. We demonstrate an overhead reduction when software including common embedded system tasks, such as ADC sampling, DSP operations, and communication interfaces, are implemented in a heterogeneous execution flow. When we used the proposed method, embedded software was able to take advantage of idle states that occur between heterogeneous tasks to make efficient use of the resources on the board. As a result of the experiments, the power consumption of the board decreased by 42.11% compared to the baseline. Furthermore, the time required to process the same amount of sampling data was reduced by 27.09%. Experimental results validate the efficiency of the proposed multi-core cooperative heterogeneous embedded software execution technique.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.70-77
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• 2013

We suggest a low area and high efficiency switched-mode power supply (SMPS) with a pulse width modulation (PWM) generator based on a pseudo relaxation-oscillating technique. In the proposed circuit, the PWM duty ratio is determined by the voltage slope control of an internal capacitor according to amount of charging current in a PWM generator. Compared to conventional SMPSs, the proposed control method consists of a simple structure without the filter circuits needed for an analog-controlled SMPS or the digital compensator used by a digitally-controlled SMPS. The proposed circuit is able to operate at switching frequency of 1MHz~10MHz, as this frequency can be controlled from the selection of one of the internal capacitors in a PWM generator. The maximum current of the core circuit is 2.7 mA, and the total current of the entire circuit including output buffer driver is 15 mA at 10 MHz switching frequency. The proposed SMPS has a simulated maximum ripple voltage of 7mV. In this paper, to verify the operation of the proposed circuit, we performed simulation using Dongbu Hitek BCD $0.35{\mu}m$ technology and measured the proposed circuit.

• Journal of IKEEE
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• v.20 no.1
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• pp.45-53
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• 2016

This paper presents a CMOS interface circuit for vibration energy harvesting with MPPT (Maximum Power Point Tracking). In the proposed system a PMU (Power Management Unit) is employed at the output of a DC-DC boost converter to provide a regulated output with low-cost and simple architecture. In addition an MPPT controller using FOC (Fractional Open Circuit) technique is designed to harvest maximum power from vibration devices and increase efficiency of overall system. The AC signal from vibration devices is converted into a DC signal by an AC-DC converter, and then boosted through the DC-DC boost converter. The boosted signal is converted into a duty-cycled and regulated signal and delivered to loads by the PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a DC-DC boost converter architecture using a schottky diode is employed for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process, and the designed chip occupies $915{\mu}m{\times}895{\mu}m$. Simulation results shows that the maximum power efficiency of the entire system is 83.4%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.581-584
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• 2014

In this paper, a micro-scale photovoltaic(PV) energy harvesting system is proposed where an MPPT(Maximum Power Point Tracking) control is implemented using an energy distribution technique. Miniature PV cells output very low energy and low voltages, and thus, they cannot be used to directly power the MPPT controller. In the proposed system, a start-up circuit boosts an internal Vcp, and the boosted Vcp is used to operate the internal MPPT control block. When the Vcp reaches a predefined value, a detector circuit makes the start-up block turn off and provide a power converter with the energy from the PV cell. When the Vcp decreases such that the MPPT controller can not be operated, the energy transferred to the power converter is blocked and the start-up circuit is reactivated. In this way, the MPPT function is achieved by alternately operating the start-up circuit and the power converter using the energy distribution technique, and the harvested energy is transferred to a load through a PMU(Power Management Unit). The proposed circuit is designed in a 0.35um CMOS process and its functionality has been verified through extensive simulations. The designed chip area including pads is $1430um{\times}1110um$.