• Korean Journal of Materials Research
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• v.1 no.1
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• pp.37-45
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• 1991

In order to control the microstructures, the sintering behavior and abnormal grain growth with Ba/Ti ratio variation of $BaTiO_3$were investigated. The $BaTiO_3$powders used in this study were prepared by conventional calcination of $BaCO_3$ and $TiO_2$. The onset temperatures of the sintering were lowered and the densification was enhanced with increasing amounts of $TiO_2$ excess. These results are because of decrease of calcined particle sizes. A eutectic melt above temperature of $1320^{\circ}C$ did not assist the densification. Grain growth was strongly inhibited with increasing amounts of $TiO_2$ excess. The inhibition of grain growth caused abnormal grain growth due to inhomogeneous distribution of Ti-rich second phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.428-436
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• 1997

Hexacelsian ($BaO{\cdot}Al_2O_3{\cdot}2SiO_2$) powder was prepared by a solution-polymerization route employing PVA solution as a polymeric carrier. A fine amorphous-type hexacelsian powder with an average particle size of 0.8 $\mu \textrm{m}$ and a BET specific surface area of $63 \textrm{m}^2$/g was made by a ball-milling the powder precursor for 12 h after calcination at $800^{\circ}C$ for :1 h. A densified hexacelsian was obtained through sintering at $1550^{\circ}C$ for 2 h under an air atmosphere. The $\alpha\longleftrightarrow\beta$ and $\beta\longleftrightarrow\gamma$ displacive phase transformation in polycrystalline hexacelsia,n was examined by using dilatometry and differential scanning calorimtry. The reconstructive transformation between hexacelsian and celsian was obtained by annealing at $1600^{\circ}C$ for 72h. Volume contraction of 5.6% was accompanied by the reconstructive transformation.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.627-632
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• 1995

W-Cu composites utilize the high electrical conductivity of copper and arc erosion resistance of tungsten to provide properties better suited to electrical contact applications than either tungsten or copper alone. W-Cu composite materials were milled in an attritor with an impeller speed of 300rpm for various milling times. The milled powders were compacted at 300MPa into cylinders, 16m in diameter, and approximately 4m high. Sintering was performed in dry H$_2$at temperature ranging from 1200$^{\circ}C$ to 1400$^{\circ}C$. Samples were sectioned and were polished for scanning electron microscopy (SEM) of microstructures. Homogeneous W-Cu composites were formed after 10 hours mechanical alloying and could be attained 99% density at 1330$^{\circ}C$. As mechanical alloying time increased, Fe-concentration was increased linearly. Intermetallic compound formation interupted the growth of W particles Increased hardness.

• Journal of Powder Materials
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• v.7 no.3
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• pp.137-142
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• 2000

In order to analyze the densification behaviour of stainless steel powder compacts during hot isostatic pressing (HIP) at elevated temperatures, a power-law creep constitutive model based on the plastic deformation theory for porous materials was applied to the densification. Various densification mechanisms including interparticle boundary diffusion, grain boundary diffusion and lattice diffusion mechanisms were incorporated in the constitutive model, as well. The power-law creep model in conjunction with various diffusion models was applied to the HIP process of 316L stainless steel powder compacts under 50 and 100 MPa at $1125^{\circ}C$. The results of the calculations were verified using literature data. It could be found that the contribution of the diffusional mechanisms is not significant under the current process conditions.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.77-86
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• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.289-295
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• 1997

Effect of ceramic processing was investigated on the microstructure and electronic properties of low loss Mn-Zn ferrite. Addition of CaO and SiO2 to calcined powder rather than to raw materials mixtured resulted in finer-grained microstructure. Higher oxygen pressure during sintering caused microstructural inhomogeneity and the increase in power loss and disaccommodation factor. Relatively low power loss was found for sintering up to 130$0^{\circ}C$ from powders calcined at high temperature and milled shortly. It was caused by slow densification rate and normal grain growth up to 130$0^{\circ}C$. Calcination at low temperature and prolonged milling enhanced den-sification, which gave a fine grained microstructure and low powder loss at sintering temperture below 120$0^{\circ}C$. Sintering temperature above 125$0^{\circ}C$, however, showed abnormal grain growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.619-625
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• 1998

The effect of softening point and glass amount of glass frit on the sintering behavior of low temperature cofirable glass/ceramic composites was studied and according to these results, glass/ceramic composites with high sintered density was fabricated. The density of composites was increased as the glass amount was increased. In case of using the glass with low softening point, the deformation of specimen was occurred though the ratio of the glass amount in the specimen was low. But, in case of using the glass with high softening point, the sintered density of composites was increased in accordance with glass amount. With the specimen of high softening point, the deformation was not happened. Therefore, it was found that the densification was progressed continuously in high glass amount. From the study on the effect of softening point of glass on sintering behavior, the suitable softening point and glass amount for fabrication of glass/ceramic composites can be anticipated. When glass frit with softening point of $790^{\circ}C$ was chosen according to this result, low temperature cofirable glass/ceramic composites with high density (97%) at $900^{\circ}C$ was fabricated.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.769-774
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• 2002

The powder mixture in which Fe-Ni alloy particles of 20 nm were homogeneously dispersed on $Al_2O_3$ particle surfaces was prepared by hydrogen reduction of $Al_2O_3$ and metal oxide powders. $Al_2O_3$/Fe-Ni nanocomposites fabricated by pressureless sintering were only composed of $Al_2O_3$ and ${gamma}$-Fe-Ni phases and achieved over 98% of the theoretical density at the sintering temperature above $1350^{\circ}C$. The highest strength and toughness of the composites were 574 MPa and 3.9 MP$a{\cdot}m1/2$, respectively. These values were about 20% higher than these of monolithic $Al_2O_3$ sintered at the same conditions. Nanocomposites showed ferromagnetic properties and coercive force was increased with decrease of the average particle size of dispersions.

• Journal of Powder Materials
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• v.17 no.3
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• pp.190-196
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• 2010

In this paper, rapid solidified Mg-4.3Zn-0.7Y (at.%) alloy powders were prepared using an inert gas atomizer, followed by a severe plastic deformation technique of high pressure torsion (HPT) for consolidation of the powders. The gas atomized powders were almost spherical in shape, and grain size was as fine as less than $5\;{\mu}m$ due to rapid solidification. Plastic deformation responses during HPT were simulated using the finite element method, which shows in good agreement with the analytical solutions of a strain expression in torsion. Varying the HPT processing temperature from ambient to 473 K, the behavior of powder consolidation, matrix microstructural evolution and mechanical properties of the compacts was investigated. The gas atomized powders were deformed plastically as well as fully densified, resulting in effective grain size refinements and enhanced microhardness values.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.21-29
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• 1999

The effects of density and pore size distribution of substrate in preparing SiC conversiton layer on graphite substrate were investigated. The chemical reaction for formation of SiC conversion layer was occurred at substrate surface or below surface through SiC gas infiltration. It was supposed that the pore size distribution required for the sufficient SiO gas infiltration and the continuous chemical reaction during conversion process was in the range of 1.0∼10.0$\mu\textrm{m}$. In the stress analysis of SiC layer with finite element method (FEM), the residual stress distribution due to thermal mismatch was shown. However, the compressive stress was measured in SiC layer by X-ray diffraction, it was presumed that the residual stress distribution of SiC layer was mainly influenced by the constraining effect of interlayer between SiC layer and graphite substrate, and the densification behaviro and the grain growth in SiC conversion layer.