• Resources Recycling
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• v.14 no.2
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• pp.28-32
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• 2005

By using thermal decomposition method, the preliminary experiments for recovery of metallic Ga from GaAs scraps produced in the manufacturing of compound semiconductors were carried out in laboratory(200 g/batch) scales. From these results, decomposition appratus with packed tower was constructed in commercial scale(30 kg/batch). The decomposition rate of GaAs increased with raising decomposition temperature, but the yield of Ga decreased over 1000$^{\circ}C. As a result, the optimum decomposition temperature was 1000~1050$^{\circ}C when the pressure of decomposition reactor was 2~2.5${\times}10^{-2} mmHg, and the yield of Ga was about 89 wt.%. The commercial decomposition apparatus was designed with packed tower because the partial pressure of As in vapor state was not reduced even if the temperature of As vapor was decreased. The recovery yield of Ga from GaAs scraps in large scale experiment showed 99%.