• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.224-230
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• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.1
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• pp.466-474
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• 2014

This paper presents the line contention avoidance experiments with an optical switch, which was selected based on the comparison analysis and evaluation of the various characteristics. For example, the function, structure, strengths and weaknesses of the optical switches. After considering the nonblocking, modularity, upgrade ability and optical power loss of the several kind of the switch fabrics, a switch was selected. The selected switch fabric by using wavelength converters was controlled to avoid contention of the optical lines. In this experiment shows an example of three cases. As a result of this experiment, optical signal shows a changed peek of optical power in output. By showing a peak it confirms that the contention was avoided. By analyzing of changed optical power according to the channel setting time and release time to control of the switch could be determined. If this analysis applied to the network design, economical and efficient structures can be formed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.18-21
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• 2009

In the digital system, ROM has a large power-consumption and a speed-bottleneck. According to gradual growth of system speed, ROM is demanded to have low-power consumption and high-speed operation design. The ROM adapted in FFT or FIR filter needs method of sequential accessed addressing. We proposed a reduction method for the number of storage cells in this paper. The number of storage cells which is connected with bi-line is reduced by the proposed method so that the capacitance value of bit-time is reduced. In this case, delay time, and power consumption are reduced. Design result of ROM in this paper using the proposed method could reduce up to 86.3% of storage cell '1' compare with conventional method.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.3
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• pp.258-265
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• 2006

In this paper, an active clamping sepic-flyback converter has been proposed, which is suitable for a fuel cell based power generation system. The proposed converter is superposition of sepic converter mode and flyback mode. It has outstanding high boosting output voltage, component utilization and high efficiency characteristics under the inherently severe low output voltage of the fuel cell generator. In this paper, the validity of the proposed converter has been verified by the informative simulation and experimental results that make used of the PEMFC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.632-639
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• 2018

This paper presents a single antenna radar sensor with a Ku-band radar transceiver IC realized by 130 nm CMOS processes. In this radar receiver, sensitivity time control using a DC offset cancellation feedback loop is employed to achieve a constant SNR, irrespective of distance. In addition, the receiver RF block has gain control to adjust high dynamic range. The RF output power is 9 dBm and the full chain gain of the Rx is 82 dB. To reduce the direct-coupled Tx signal to the Rx in a single antenna radar, a stub-tuned hybrid coupler is adopted instead of a bulky circulator. The maximum measured distance between the horn antenna and a metal plate target is 6 m.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.1
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• pp.80-86
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• 2010

This paper describes the development result of S-band Transmitter of STSAT-3 by satellite research center(SaTReC), KAIST. STSAT-3 has two kinds of communication channels, S- band for Telemetry & Command and X-band for mission payload. S-band Transmiiter(STX) consist of modulator, frequency synthesizer, power amp and DC/DC converter. The modulation scheme of STX is FSK(Frequency Shift Keying). The interface between spacecraft OBC and STX is RS-422. The STX is based on modular design. The RF output power of STX is 1.5W(31.7dBm) and BER of STX is under 1E-5. The Test of STX is completed successfully such as functional Test and environmental(vibration, thermal vacuum) Test.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.6
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• pp.2196-2201
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• 2010

The video transmission system using OFDM method at 18GHz frequency band was developed for wireless video transmission from subway to monitoring center when subway running. It is composed of digital modulation board and RF board. And it has a robust characteristics of multipath fading in subway tunnels at 18GHz. To verify the system, we used spectrum analyzer for analysing the output of transmission system and get the results that it has 350MHz frequency, 8MHz bandwidth and -19dBm channel power. Also we tested video receiving using MPEG-2 encoder and got good quality images.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.513-517
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• 2003

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator} applied to X-band as stable source is implementea and constructed with a MESFET for low noise, a dielectric resonator of high frequency selectivity and high Q varactor diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated through the harmonic balance simulation technique to provide the optimum performance. The measured results of a fabricated VCDRO show that output is 2.22dBm at 12.05GHz. harmonic suppression -30dBc. phase noise -130dBc at 100kHz offset. and sweep range of varactor diode $\pm$18.7MHz. respectively. This oscillator will be available to X-band application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1734-1740
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• 2012

In this paper, we propose a FSOURCE circuit which requires such a small switching current that an eFuse OTP memory can be programmed in the post-package state of the PMIC chips using a single power supply. The proposed FSOURCE circuit removes its short-circuit current by using a non-overlapped clock and reduces its maximum current by reducing the turned-on slope of its driving transistor. Also, we propose a DOUT buffer circuit initializing the output data of the eFuse OTP memory with arbitrary data during the power-on reset mode. We design a 24-bit differential paired eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $381.575{\mu}m{\times}354.375{\mu}m$($=0.135mm^2$).