• Title/Summary/Keyword: 최적 성장조건

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Plasmid Stabilitly of a Recombinant Escherichia coli and Optimization of Fermentation Processes (유전자 재조합 균주에서 플라스미드의 안정성과 발효 공정의 최적화)

  • 박성훈
    • Journal of Life Science
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    • v.2 no.1
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    • pp.26-34
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    • 1992
  • 유전자 재조합 균주의 발효에 있어서 플라스미드의 안정성과 발효공정의 최적화에 대해 개략적으로 서술하였다. 클론된 DNA의 발현은 플라스미드의 안정성을 크게 저해하며, 저하된 플라스미드의 안정성은 재조합 균주의 생산성을 많이 떨어뜨린다. 최적 발효 조건은 각각의 숙주-벡터 시스템, 사용한 배지, 생성물 등에 따라 크게 변한다. 동일한 숙주-벡터 시스템의 경우도, 사용하는 배지에 따라 온도, 희석률 또는 성장속도에 의존하는 정도가 달라지고 또 최적값도 다 변한다. 또한 발효조건의 최적화가 균체 내 플라스미드의 자기복제,mRNA로의 전사, 단백질로의 translation, 더 나아가 미생물 전체의 생리와 밀접하게 관련이 있다.

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Growth of ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$( Single Crystals by EFG Method (EFG법에 의한 ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$(BSO)단결정의 육성)

  • ;;Kei-Miyamto
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.26-38
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    • 1991
  • The fundamental conditions for growing $r-6Bi_2O_3{\cdot}SiO_2$(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti$\mu$ growing conditions determined in this study were as follows: ${\cdot}$temperature gradient;$24^{\circ}C/cm$ ${\cdot}$pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was $5.1\times10^5/cm^2$.

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The effect of Thermal Distribution on $LaSc_3(BO_3)_4$ Crystal Growth by Cz Method ($LaSc_3(BO_3)_4$ 단결정 성장조건)

  • 장영남;배인국
    • Korean Journal of Crystallography
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    • v.9 no.1
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    • pp.21-29
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    • 1998
  • The rare-earth orthoborate family, RM3(BO3)4 is known to be the most promising material for the microlaser host. To grow LaSc3(BO3)4 single crystal, the phase relation of the system LaBO3-ScBO3 was investigated by DTA method. LaSc(BO3)4 was the unique intermediate compound in the binary system the peritectic reaction point of which was 1495 ±2℃. Owing to the peritectic behavior of the compound, the crystal growth of the rare-earth Sc-borate was carried out by pulling from the melt-soultion of La1+xSc3-x(BO3)4. The optimal conditions for the growth of LaSc3(BO3)4 were determined by traditional CZ method : pulling speed 0.7mm/hr, rotation speed 7-10 rpm under reduction condition. Pt and Ir crucibles could be used for about 8-10 times of growth. The effect of thermal configurations on the temperature distribution was investigated. A special two-coordinate manipulator was made for the precise movement of thermocouples from the melt to the top of the furnace for several thermal configurations. The radial gradient on the melt surface depends strongly on the construction of the afterheater. On the other hand, the axial gradient was mainly propotional to both the opening degree of baffle plate and the mutual positions of crucible and heater.

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Ruby single crystal growth by the xenon-arc type floating zone method (Xenon-arc type floating zone법에 의한 루비 단결정 성장)

  • 정일형;임창성;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.521-527
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    • 1997
  • Ruby single crystals of 6-7 mm in dialneter and 20-25 mm in length were grown by the xenon-arc type floating zone method using a self-designed FZHY1, Calcination and sintering conditions were investigated and optimum growth conditions were established for controlling the factors such as growth rates, rotation speeds and cooling rates. Also the available energy levels of $Cr^{3+}$ were calculated from transmission data. The growth direction of the crystals was [1010] direction identified by Laue back reflection pattern. The distribution of refractive indices on the wafer of the grown crystals was homogeneous except for the edges of the wafer. The crystals could be used as a laser material with a wavelength of 693 nm and a metastate level.

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Effects of gas pressure sintering (GPS) conditions on the mechanical properties of silicon nitride (가스압 소결(GPS) 조건이 질화규소의 기계적 특성에 미치는 영향)

  • 이수완;김성호;정용선
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.619-625
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    • 1997
  • $Si_3N_4$ powder with 2 wt% $Al_2O_3$ and 6 wt% $Y_2O_3$additives was gas pressure sintered (GPS). Characterization of the mechanical properties was compared with sintering conditions (temperature, pressure, time). Based on experimental result , the optimal condition of gas pressure sintering was found at $1900^{\circ}C$, 3 MPa for 1 hour. It is assumed that mechanical properties were degraded due to the grain coasening effects with increasing temperature or holding time. However, the grain size was decreased with increasing pressure, resulted in better strength, but lower fracture toughness. Present results suggested that optimization of processing parameters was impotant for better mechanical properties of $Si_3N_4$.

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Optimal Culture Conditions for MK1 Strain Isolated from Soft-Rotten Tissue of Neungee Mushroom (Sarcodon aspratus) and the Physico-Chemical Properties of the Purified Exopolysaccharide of MK1 (능이버섯(Sarcodon aspratus) 무름병소에서 분리한 MK1 균주의 최적 성장조건과 정제된 균체외다당류의 특성)

  • Ryu, Jeong-Eun;Lee, Young-Nam
    • Korean Journal of Microbiology
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    • v.45 no.4
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    • pp.324-331
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    • 2009
  • MK1 strain, an obligate aerobic heterotrophic bacterium isolated from the rotten tissue of Neungee mushroom (Sarcodon aspratus), produces a copious amount of exopolysaccharide (EPS), which could evoke macrophage activation. Investigations on optimal culture conditions of MK1 and physical properties of MK1 EPS were made. Glucose, galactose, fructose, and sucrose supported well growth of MK1, but potato starch and dextrin did not. However, lactose seemed to be a less favorable carbon source. Optimal growth of MK1 was obtained at pH 7.0, $30^{\circ}C$, and 200 rpm with 2% glucose, and 0.2~0.05% $(NH_4)_2SO_4$. $EPS_{opt}$ obtained from an optimal growth condition constituted of carbon (37.1%), nitrogen (2.2%), oxygen (49.3%), and hydrogen (6.4%), but no sulfur. Paper chrogromatogram of the acid-hydrolysate of $EPS_{opt}$ suggested that MK1 EPS seemed to be hetropolysaccharide composed of a few number of monosaccharides including amino- and acidic-sugars. Its molecular mass determined by SDS-polyacrylamide gel electrophoresis varied from 14.8 to 47.9 kDa. Physical properties of $EPS_{glu}$ obtained from cell grown in glucose medium, such as relative viscosity ($_{rel}$) and crystalline morphology were rather affected by pH of the growth medium. Relative viscosity ($_{rel}$) of exopolysaccaride (0.1 g/ml) harvested from cells grown at medium pH ranging from 6.0 and 7.5 was 1.23 and 1.39, respectively. The freeze-dried exopolysaccharide obtained at low pH (6.0 and 6.5) was fine crystaloid and water-soluble, whereas those obtained at high pH (7.0 and 7.5) was rather gluey and less water-soluble.

수온 변화와 개체크기에 대한 바지락, Ruditapes philippinarum의 최적 성장에 대한 연구

  • 이순우;왕순영;한경남
    • Proceedings of the Korean Society of Fisheries Technology Conference
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    • 2001.10a
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    • pp.305-306
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    • 2001
  • 수온은 개체들의 활성도와 분포를 제한하는 직접적인 요인이며, 에너지 수지에 포함되는 섭이 활동, 대사작용과 성장들을 포함한 대부분의 생리학적 과정들에 영향을 미친다(Fry, 1971). 적온 범위에 대한 변통은 종간 뿐만 아니라 종내에서도 크다. 그러므로 특정한 조건하에 생태적으로나 상업적으로 가치가 있는 종들에 대한 성장 실험(Scope for growth)은 필요하며, SFG는 넓은 범위의 환경상태에 대해서 민감하고, 정량적이며 통합적인 스트레스에 대한 반응을 제공한다. (중략)

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Determination of Optimum Conditions for Xylose Fermentation by Pichia stipitis (Pichia stipitis에 의한 Xylose 발효의 최적조건 결정)

  • 권순효;유연우서진호
    • KSBB Journal
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    • v.8 no.5
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    • pp.452-456
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    • 1993
  • This study was carried out to optimize the fermentation conditions for direct alcohol fermentation of xylose by Pichia stipitis CBS 5776. The best cell growth and the ethanol production were obtained under 0.05 VVM aeration and 300rpm agitation at $30^{\circ}C$ using 100 g/l xylose medium of the initial pH 5.0. In the above condition, the maximum specific growth rate and maximum cell concentration were 0.14hr-1 and $1.3 \times109$ cells/ml, respectively. Pichia stipitis CBS 5776 also produced 40.2g/l ethanol utilizing about 96% of 100g/l xylose after 72hr fermentation. At this point, the overall volumetric ethanol productivity was 0.56g/1-hr and the ethanol yield was 0.42 g-ethanol/g-xylose consumed, which corresponds to 82% of the theoretical yield.

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Optimal Conditions for the Production of Immunostimulating Polysaccharides from the Suspension Culture of Angelica gigas Cells. (면역증강성 다당 생산을 위한 참당귀 세포배양의 최적조건)

  • 안경섭;서원택;심웅섭;김익환
    • Microbiology and Biotechnology Letters
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    • v.26 no.2
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    • pp.130-136
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    • 1998
  • An Immunostimulating polysaccharide was produced from the suspension culture of Angelica gigas H4, plant cells. In order to enhance the polysaccharide production by the A. gigas cell culture, medium composition and physical conditions were optimized. Schenk and Hildebrandt (SH) medium was selected as an optimal basal medium for the growth of A. gigas. The maximum cell and polysaccharide concentration obtained in SH medium were 15.8 g DCW/l and 0.85 g polysaccharide/l, respectively, at $25^{\circ}C$ under dark condition. For the enhanced polysaccharide production, a polysaccharide production medium (PPM) was established by modifying Gamborg B5 medium with optimized carbon sources, growth regulators, organic and inorganic elements. Optimal initial pH and temperature were 6.0-6.6 and $20^{\circ}C$, respectively, and the dark condition was better than the light condition. The maximum polysaccharide concentration of 1.5 g/l could be obtained through the optimization of the medium composition and physical conditions.

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유기 금속 화학 증착법에 의한 Si 기판 위에 GaP 층 성장시 에피의 초기 단계의 성장 매개 변수에 영향

  • Gang, Dae-Seon;Seo, Yeong-Seong;Kim, Seong-Min;Sin, Jae-Cheol;Han, Myeong-Su;Kim, Hyo-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.209.1-209.1
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    • 2013
  • GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

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