• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Progress in Superconductivity
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• 제4권1호
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• pp.74-79
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• 2002

High-speed probe made to test single flux quantum(SFQ) circuits was comprised of semi-rigid coaxial cables and microstrip lines. The impedance was set at 50 $\Omega$to carry high-speed signals without much loss. To do performance test of high-speed probe, we have attempted to fabricate a test chip which has a coplanar waveguide(CPW) structure. Electromagnetic simulation was done to optimize the dimension of CPW so that the CPW structure has an impedance of 50$\Omega$, matching in impedance with the probe. We also used the simulation to investigate the effect of the width of signal line and the gap between signal line and ground plane to the characteristics of CPW structure. We fabricated the CPW structure with a gold film deposited on Si wafer whose resistivity was above $1.5\times$10$_4$$\Omega$.cm. The magnitudes of S／sub 21／ of CPW at 6 ㎓ in simulations and in the actual measurements done with a network analyzer were: -0.1 ㏈ and -0.33 ㏈ (type A),-0.2 ㏈ and -0.48 ㏈ (type B), respectively. Using the test chip, we have successfully tested the performance of high-speed probe made for SFQ circuits. The probe showed the good performance overthe bandwidth of 10 ㎓.

• 전자공학회논문지A
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• 제32A권2호
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• 한국재료학회지
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• 제8권5호
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• pp.419-423
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• 1998

매립형 InGaAnP/InP 레이저 다이오드 제작을 위한 질량 이동 현상의 최적화에 대한 연구를 수행하였다. Double heterostructure 레이저 다이오드 구조의 1차 성장은 액상 에피 성장 장치를 이용하였으며, 메사 에칭하였다. 활성층을 [110] 방향으로 선택적으로 에칭 한 후, 액상 에피 성장 장치를 이용하여 질량 이동 현상을 발생시켜 매립형 구조를 형성시켰다. 질량 이동 현상의 임계온도는 40분간 유지시켰을 때 $670^{\circ}C$로 나타났으며 재현성 있게 질량 이동 현상이 발생하였다. 질량 이동 현상에 의해 성장된 층의 폭은 온도증가에 따라 약간 증가하였다.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• 한국진공학회지
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• 제8권3A호
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• pp.207-212
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• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• 한국재료학회지
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• 제9권1호
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• pp.42-45
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• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 한국진공학회지
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• 제9권2호
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• pp.150-154
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• 2000

Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중 양자 우물 구조에서 열처리 온도에 따른 무질서 정도를 조사하였다. InGaAs/SiO$_2$ cap 구조가 InP/$SiO_2$ cap 구조보다 급속열처리 (rapid thermal annealing : RTA) 과정에서 더 많은 청색 천이를 나타내었다. 열처리 온도 $700^{\circ}C$에서, InGaAs/$SiO_2$ cap 구조의 경우 다중양자우물의 밴드갭 파장은 1.55 $\mu\textrm{m}$대역에서 1.3 $\mu\textrm{m}$ 대역으로 이동하였으며, InGaAs/$SiO_2$ cap 구조와 InP/$SiO_2$ cap 구조의 밴드갭 파장차이는 195 nm (123 meV)로 높은 선택성을 나타내었다. 또한, DCXRD 스펙트럼으로부터 다중양자우물 구조에서 균일한 합금형태로 완전히 무질서화되는 것을 볼 수 있었다.