• 대한방사선방어학회:학술대회논문집
• /
• 2009.11a
• /
• pp.166-167
• /
• 2009

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.13.1-13.1
• /
• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.4
• /
• pp.129-134
• /
• 2005

A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystal puller. The turbulent modeling was used to simulate the transport phenomena in 18' single crystal growing process. For small crucible angular velocity, the natural convection is dominant. As the crucible angular velocity is increased, the forced convection is increased and the distribution of temperature profiles is broadened. The cusp magnetic field reduces effectively the natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar in the case of conduction.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.259-259
• /
• 2005

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2001.05a
• /
• pp.27-27
• /
• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.1
• /
• pp.1-11
• /
• 1993

A suppression of turbulent fluid motion and a control of oxygen and dopants could be improved by application of magnetic field in Czochralski growth of silicon. The effect of an axial magnetic field on Czochralski system was numerically calculated. The fluid motions induced by temperature gradients and by crystal and crucible rotations were suppressed by magnetic force. The S/L interface was gradually flattened in proportion to the increase of magnetic field due to a reduced ascending velocity in the vicinity of center line. The t.emperature distributions in the melt at 8=0.3 Tesla were similar to those analyzed by the conduction heat transfer only. The dissipated amounts of heat flux from melt and crystal surfaces by Ar gas blowing was Jess than 3 %.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.6
• /
• pp.219-224
• /
• 2022

CaF₂ single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF₂ belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF₂ single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF₂ single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF₂ crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.4
• /
• pp.536-547
• /
• 1997

For various angular velocities of crucible and crystal, the characteristics of melt flows, temperatures and concentrations of oxygen are numerically studied in the Czochralski furnace with a uniform axial magnetic field. Buoyancy effect due to the heating of crucible wall and thermocapillary effect due to the temperature gradient at the free surface, can be differentiably suppressed by the centrifugal forces due to the rotations of the crucible and crystal. The most important factor which yields the centrifugal forces is the rotation velocity of the crucible, that influences the fields of velocities, temperatures and concentrations. In the case that the crucible rotation velocity is not high, the rotations of the crystal gives rise to the centrifugal forces effectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.1
• /
• pp.1-10
• /
• 1996

A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number ${\kappa} - {\varepsilon}$ model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.149-156
• /
• 1999

An experimental simulation on the flow in Czochralski melt using a cold model was carried out to obtain the velocities of fluid flow which affects the oxygen concentration of Czochralski crystal growing system. Low melting point Woods metal with similar Pr number to the silicon melt was adopted as a working fluid. Local flow velocities at numerous positions in the melt were simulataneously measured in three dimension using incorporated magnet probe. The measured velocity field showed a non-axisymmetric pattern dominated by natural convection. The analysis on the correlation between data set of temperatures simultaneously measured at two melt positions showed that the values of correlation coefficients were smaller than those of previous study on the small size of silicon melt and these phenomena are believed to occur because turbulent behavior becomes stronger in large size of the melt.