• 제목/요약/키워드: 초정밀 폴리싱

검색결과 13건 처리시간 0.018초

ER유체를 이용한 미세 연마 가공 (Micro Plishing using Electorheological fluid)

  • 김욱배;이성재;박철우;이상조
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.850-853
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    • 2000
  • It is well-known that Electro-rheological(ER) fluid is a material(suspension) which shows the dramatic change of rheological properties under an electric field. Using these properties, the concept that variable apparent viscosity of ER fluid could be applicable to the polishing for micro parts was introduced. It was investigated that how it works for polishing and how it affects ER effect when abrasives were mixed with an ER fluid. Therefore a few structures for polishing using ER fluid was suggested and evaluated by means of experiments. In this paper, fundamental mechanism and experimental results are described.

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이중화된 패턴을 참조하는 평면 변위 측정 방법 (Measuring Method of Planar Displacement Referring to The Double Linear Patterns)

  • 박성준;정광석
    • 한국산학기술학회논문지
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    • 제16권7호
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    • pp.4405-4410
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    • 2015
  • 두 개의 1차원 주기 패턴을 수직으로 중첩시켜 상하층 패턴으로부터 이축 변위 정보를 각각 디코딩할 수 있는 방법을 제안한다. 투명한 상층 패턴 판별은 굴절률차에 기인한 레이저 빔의 디플렉션 검출을 통해 이뤄지고 하층 패턴 판별은 수광 전압 차의 검출를 통해 이뤄진다. 빌드 업 필름 재질의 상층 패턴은 UV 레이저 가공에 의해 미세가공되고 그리고 알루미늄 하층 패턴은 초정밀 머시닝에 의한 트렌치 가공과 불투명 소재 증착 그리고 폴리싱 과정을 통해 제작된다. 10마이크로미터 간격으로 제작된 샘플 패턴과 이를 인코딩할 수 있는 전용 광학계에 의한 변위 측정 방법은 대면적 스테이지에 장착되어 레이저 간섭계를 이용한 측정데이터와 비교하여 검증된다.

최적조건 선정을 위한 Pad 특성과 Wafer Final Polishing의 가공표면에 관한 연구 (The Study on the Wafer Surface and Pad Characteristic for Optimal Condition in Wafer Final Polishing)

  • 원종구;이은상;이상균
    • 한국기계가공학회지
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    • 제11권1호
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    • pp.26-32
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    • 2012
  • Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study will report the characteristic of wafer according to processing time, machining speed and pressure which have major influence on the abrasion of Si wafer polishing. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The characteristic of wafer surface according to processing condition is selected to use a result data that measure a pressure, machining speed, and the processing time. This result is appeared by the characteristic of wafer surface in machining condition. Through that, the study cans evaluation a wafer characteristic in variable machining condition. It is important to obtain optimal condition. Thus the optimum condition selection of ultra precision Si wafer polishing using load cell and infrared temperature sensor. To evaluate each machining factor, use a data through each sensor. That evaluation of abrasion according to variety condition is selected to use a result data that measure a pressure, machining speed, and the processing time. And optimum condition is selected by this result.