• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.244-245
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• 2002

1 picosecond 보다 짧은 펄스길이를 갖는 초단파길이 레이저 펄스 (Ultrashort laser pulse, USLP)를 이용한 물질의 절제 (ablation)는 여타 nanosecond 영역의 레이저 절제와 많은 차이를 보인다(1). USLP는 순간 파워가 매우 높기 때문에 직접적으로 물질의 원자를 분리시켜 자유전자를 형성한다 이들 자유전자는 일반 선형흡수체 (linear absorbing chromophore)보다 흡수계수가 몇 십 배로 높아 대부분의 펄스 에너지가 표면 100-200 m 이내의 극히 작은 지역에 밀집되게 된다. (중략)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.947-948
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• 2009

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.294-295
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• 2002